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Anthony Rice

Publications and source records attributed to Anthony Rice.

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Efficient generation of entangled photons in the telecommunications range using nonlinear metasurfaces integrated with ScAlN/GaN heterostructures

Entangled photons provide non-classical correlations that enable measurement sensitivities beyond classical limits, scalable fault-tolerant quantum computation, and fundamentally secure quantum communication, making them a foundational necessity for next-generation quantum technologies. Here we propose and analyze a novel source of entangled photons based on ScAlN/GaN quantum wells integrated with dielectric metasurfaces. Giant second-order intersubband nonlinearity of the GaN quantum wells with strain-compensated delta-doped ScAlN barriers caused by strong built-in electric fields combined with superior mode-coupling performance of metasurfaces optimized by inverse design give rise to efficient parametric down-conversion and generation of entangled photons in the telecom range. We develop a rigorous Heisenberg-Langevin formalism which includes field quantization, dissipation and fluctuations for all fields, parametric amplification of thermal noise and zero-point fluctuations, and other relevant effects. Our proposed approach of employing the emergent photonic material ScAlN promises high biphoton generation rate over $10^{10}$ s$^{-1}$ from a compact integrated structure that is only 0.5 $\mu$m thick while mitigating strain-related issues that have so far impeded progress of nitride-based heterostructures for quantum photonic applications into the infrared and visible wavelengths. Our result therefore is relevant for numerous applications ranging from quantum sensing, quantum information, and computing.

physics.optics

Island Sliding Barriers: A first-principles metric for determining remote epitaxy viability

Remote epitaxy, where a 2D van der Waals material (usually graphene) is inserted on top of the substrate before film epitaxy, has emerged as a promising path for growing electronics with lower defect rates and less stringent lattice matching requirements. The exact mechanism behind remote epitaxy has not been definitively shown, however, and it is not obvious when examining a new substrate-film pair whether they would be compatible with the remote epitaxy process. In this paper, we use first principles calculations to test several different mechanisms for determining whether a given substrate-film pair will successfully be grown with remote epitaxy. We find that previously calculated metrics such as electrostatic potential do not hold sufficient explanatory power. We find that the sliding barrier of small islands on the surface when the atomic positions are allowed to optimize provides the most rigorous criteria for whether a given substrate-film pair is remote epitaxy active. This indicates that remote epitaxy is likely a phenomenon related to the kinetics and ease of island migration on the graphene surface.

cond-mat.mtrl-sci

Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of topological semimetal Cd3As2, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to contraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched ZnxCd1-xTe buffer layers, miscut substrates and broadband illumination to study how dislocations, twins and point defects influence the electron mobility of Cd3As2. A combination of defect suppression approaches produces Cd3As2 epilayers with electron mobilities upwards of 15,000 cm2/V-s at room temperature.

cond-mat.mtrl-sci