arXiv subjects

Anthony Sigillito

Publications and source records attributed to Anthony Sigillito.

7 recordsLinked to original sources

arXiv2026

Overcoming Configuration Bottleneck: Modular Pathways to Stable Semiconductor Spin-Qubit Arrays

Over the past decade, semiconductor spin qubits have progressed from few-qubit demonstrations towards larger-scale devices fabricated in increasingly reproducible academic and industrial processes. This progress marks an inflection point: the central challenge is no longer to demonstrate high-fidelity operation in carefully tuned devices, but to discover, verify, and maintain stable operating conditions reliably across many interdependent controls, varied device geometries, and disparate material platforms. In this Perspective, we frame spin-qubit operation as a modular automation problem. We decompose the workflow into five modules: bootstrapping from minimal prior information, configuration tuning, virtualization of physical gates into effective control axes, qubit-level tuning, and an operation layer with drift-aware maintenance. Using recent demonstrations from our work and the broader community, we argue that scalability will depend on explicit interfaces between modules, standardized intermediate data products, and workflow-level metrics such as throughput, success probability, stability time, recovery time, and robustness. We close by outlining the infrastructure needed to move beyond isolated tuning demonstrations toward sustained operation: qubit-performance-aware feedback, reusable software and benchmark tasks, and tight collaboration among experimental, theoretical, and software efforts.

quant-ph↗

arXiv2026

Interacting electrons in silicon quantum interconnects

Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a Si/SiGe heterostructure exhibit strong Coulomb interactions and realize strongly interacting Luttinger liquid physics. At low electron densities, the system enters a Wigner regime characterized by dominant 4kF correlations; increasing the electron density leads to a crossover from the Wigner regime to a Friedel regime with dominant 2kF correlations. We support these results through large-scale density matrix renormalization group (DMRG) simulations of the interacting ground state under both screened and unscreened Coulomb potentials. We propose experimental signatures of the Wigner-Friedel crossover via charge transport and charge sensing in both zero- and high-magnetic field limits. We also analyze the impact of short-range correlated disorder - including random alloy fluctuations and valley splitting variations - and identify that the Wigner-Friedel crossover remains robust until disorder levels of about 400 micro eV. Finally, we show that the Wigner regime enables long-range capacitive coupling between quantum dots across the interconnect, suggesting a route to create long-range entanglement between solid-state qubits. Our results position silicon interconnects as a platform for studying Luttinger liquid physics and for enabling architectures supporting nonlocal quantum error correction and quantum simulation.

cond-mat.mes-hall↗

arXiv2025

NeuroQD: A Learning-Based Simulation Framework For Quantum Dot Devices

Electron spin qubits in quantum dot devices are promising for scalable quantum computing. However, architectural support is currently hindered by the lack of realistic and performant simulation methods for real devices. Physics-based tools are accurate yet too slow for simulating device behavior in real-time, while qualitative models miss layout and wafer heterostructure. We propose a new simulation approach capable of simulating real devices from the cold-start with real-time performance. Leveraging a key phenomenon observed in physics-based simulation, we train a compact convolutional neural network (CNN) to infer the qubit-layer electrostatic potential from gate voltages. Our GPU-accelerated inference delivers >1000x speedup with >96% agreement to the physics-based simulation. Integrated into the experiment control stack, the simulator returns results with millisecond scale latency, reproduces key tuning features, and yields device behaviors and metrics consistent with measurements on devices operated at 9 mK.

cond-mat.mes-hall↗

arXiv2024

Data needs and challenges for quantum dot devices automation

Gate-defined quantum dots are a promising candidate system for realizing scalable, coupled qubit systems and serving as a fundamental building block for quantum computers. However, present-day quantum dot devices suffer from imperfections that must be accounted for, which hinders the characterization, tuning, and operation process. Moreover, with an increasing number of quantum dot qubits, the relevant parameter space grows sufficiently to make heuristic control infeasible. Thus, it is imperative that reliable and scalable autonomous tuning approaches are developed. This meeting report outlines current challenges in automating quantum dot device tuning and operation with a particular focus on datasets, benchmarking, and standardization. We also present insights and ideas put forward by the quantum dot community on how to overcome them. We aim to provide guidance and inspiration to researchers invested in automation efforts.

cond-mat.mes-hall↗

arXiv2024

Electrical Interconnects for Silicon Spin Qubits

Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end voltage difference across the nanowire results in an electric field that propels the electron from source dot to target dot. The electron is momentum-incoherent, but not necessarily spin-incoherent; we evaluate threats to spin coherence due to spin-orbit coupling, valley physics, and nuclear spin impurities. We find that spin-orbit coupling is the dominant threat, but momentum-space motional narrowing due to frequent scattering partially protects the electron, resulting in characteristic decoherence lengths ~15 mm for plausible parameters.

cond-mat.mes-hall↗

arXiv2024

Fast Virtual Gate Extraction For Silicon Quantum Dot Devices

Silicon quantum dot devices stand as promising candidates for large-scale quantum computing due to their extended coherence times, compact size, and recent experimental demonstrations of sizable qubit arrays. Despite the great potential, controlling these arrays remains a significant challenge. This paper introduces a new virtual gate extraction method to quickly establish orthogonal control on the potentials for individual quantum dots. Leveraging insights from the device physics, the proposed approach significantly reduces the experimental overhead by focusing on crucial regions around charge state transition. Furthermore, by employing an efficient voltage sweeping method, we can efficiently pinpoint these charge state transition lines and filter out erroneous points. Experimental evaluation using real quantum dot chip datasets demonstrates a substantial 5.84x to 19.34x speedup over conventional methods, thereby showcasing promising prospects for accelerating the scaling of silicon spin qubit devices.

cond-mat.mes-hall↗

arXiv2023

Geometric similarities and topological phases in surface magnon polaritons

Highly spatially-squeezed polaritons, with propagation momentum significantly larger than free-space modes at the same frequency, enable varied and extreme control over light-matter interaction. Compared to other polaritons, surface magnon polaritons, the magnetic counterpart of surface phonon polaritons, have received relatively little attention. Here, we investigate the dispersion and properties of surface-magnon polaritons, highlighting the impact of geometric similarities and applying them to various surface-magnon polariton devices in both conventional and topological settings. Our theory predicts a method for strongly localizing and significantly enhancing magnetic fields in the microwave range and developing compact and lossless connectors capable of interconnecting waveguides with vastly different input and output impedances. Our work opens new avenues for manipulating magnetic fields in the microwave regime and for exploring topological phases in polariton platforms.

cond-mat.mes-hall↗