arXiv subjects

Anthony T. Hatke

Publications and source records attributed to Anthony T. Hatke.

5 recordsLinked to original sources

arXiv2026

A digitally controlled silicon quantum processing unit

Commercially-relevant quantum computers will require large numbers of high-performing qubits that can be manufactured, integrated, and controlled at scale. Silicon exchange-only (EO) qubits are a strong candidate modality due to their control-signal simplicity and compatibility with advanced semiconductor manufacturing, but questions remain around the achievability of sufficiently low noise and a scalable control and wiring solution. Here we introduce a quantum processing unit composed of a custom-designed cryogenic CMOS controller, a novel high-density superconducting ribbon cable, and a low-noise EO qubit device. The quantum chip features a three-rail array of 54 exchange-coupled quantum dots, configurable to host up to 18 EO qubits. We integrate and use these components to demonstrate qubit performance for both single-qubit and entangling operations that advances the EO state of the art by an order of magnitude. We further validate this system by implementing a distance-5 repetition code and a quantum error detecting code then make detailed comparisons with simulations. Our approach facilitates a utility-scale quantum computer with manageable operational and capital requirements.

quant-ph↗

arXiv2022

Full-permutation dynamical decoupling in triple-quantum-dot spin qubits

Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first order, which is particularly interesting for encoded exchange-only qubits. For a specific construction, which we call NZ1y, the qubit is isolated from error sources to such a degree that we measure a remarkable exchange pulse error of $5\times10^{-5}$. This sequence maintains a quantum state for roughly 18,000 exchange pulses, extending the qubit coherence from $T_2^*=2~μ$s to $T_2 = 720~μ$s. We experimentally validate an error model that includes $1/f$ charge noise and $1/f$ magnetic noise in two ways: by direct exchange-qubit simulation, and by integration of the assumed noise spectra with derived filter functions, both of which reproduce the measured error and leakage with respect to changing the repetition rate.

quant-ph↗

arXiv2020

Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas

Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $\sim 0.6\, \mathrm{mT}$. We estimate the spin-orbit length in the system to be $\sim 5-10\, μ\mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.

cond-mat.mes-hall↗

arXiv2019

A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of $e^2/h$. Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias spectroscopy we measure the subband spacings in both parallel and perpendicular direction of the magnetic field and determine the $g$-factor.

cond-mat.mes-hall↗

arXiv2017

Scaling of Majorana Zero-Bias Conductance Peaks

We report an experimental study of the scaling of zero-bias conductance peaks compatible with Majorana zero modes as a function of magnetic field, tunnel coupling, and temperature in one-dimensional structures fabricated from an epitaxial semiconductor-superconductor heterostructure. Results are consistent with theory, including a peak conductance that is proportional to tunnel coupling, saturates at $2e^2/h$, decreases as expected with field-dependent gap, and collapses onto a simple scaling function in the dimensionless ratio of temperature and tunnel coupling.

cond-mat.mes-hall↗