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Anton Losev

Publications and source records attributed to Anton Losev.

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Investigation of the Effects of the Multiplication Area Shape on the Operational Parameters of InGaAs/InAlAs SPADs

A 2D model of an InGaAs/InAlAs single photon avalanche photodiode has been developed. The influence of the active area structure in the multiplication region on the diode's operating parameters has been studied. It was found that changing the diameter of the structure's active region leads to a change in the dark current in the linear part of the current-voltage curve and a change in the breakdown voltage. Reducing the diameter of the active region from 25 $μ$m to 10 $μ$m allowed decreasing the dark current in the linear mode by about $10$ dB. It has been shown that the quality of the SPAD device can be assessed by knowing the avalanche breakdown voltage and the overall current-voltage curve plot if we consider structures with the same multiplication region thickness and different remaining layers. The higher the breakdown voltage, the better the structure's quality due to smaller local increases in the field strength. Following this statement, we conclude that for further use in single-photon detectors, it is reasonable to pick specific SPADs from a batch on the sole basis of their current-voltage curves.

physics.app-ph

The avalanche delay effect in sine-gated single-photon detector based on InGaAs/InP SPADs

A sine-gated single-photon detector (SPD) intended for use in a quantum key distribution (QKD) system is considered in this paper. An "avalanche delay" effect in the sine-gated SPD is revealed. This effect consists in the appearance of an avalanche triggered at the next gate after the photon arrival gate. It has been determined experimentally that the nature of this effect is not related to the known effects of afterpulsing or charge persistence. This effect negatively affects the overall error rate in the QKD system. The influence of the main detector control parameters, such as temperature, gate amplitude and comparator's threshold voltage, on the avalanche delay effect was experimentally established.

physics.ins-det

Automated verification of countermeasure against detector-control attack in quantum key distribution

Attacks that control single-photon detectors in quantum key distribution using tailored bright illumination are capable of eavesdropping the secret key. Here we report an automated testbench that checks the detector's vulnerabilities against these attacks. We illustrate its performance by testing a free-running detector that includes a rudimentary countermeasure measuring an average photocurrent. While our testbench automatically finds the detector to be controllable in a continuous-blinding regime, the countermeasure registers photocurrent significantly exceeding that in a quantum regime, thus revealing the attack. We then perform manually a pulsed blinding attack, which controls the detector intermittently. This attack is missed by the countermeasure in a wide range of blinding pulse durations and powers, still allowing to eavesdrop the key. We make recommendations for improvement of both the testbench and countermeasure.

physics.ins-det

Investigating the coherent state detection probability of InGaAs/InP SPAD-based single-photon detectors

In this work we investigate the probabilities of detecting single- and multi-photon coherent states on InGaAs/InP sine-gated and free-run single-photon avalanche diodes. As a result, we conclude that multi-photon state detection cannot be regarded as independent events of absorption of individual single-photon states. However, if a greater number of states are one- and two-photon, then an Independent model is permissible. We conclude that physical processes must occur in the diode structure, determining the correlation when several photons are absorbed simultaneously. We present two models that we can use to describe photon interactions in a structure. The Dependent model is based on an increase/decrease in the probability of detecting an n-th photon upon an unfortunate detection of an (n-1)-th photon in an n-photon state and is well physically grounded; The Empirical model offers a simple and accurate empirical relationship.

quant-ph

Direct phase modulation via optical injection: theoretical study

Direct phase modulation via optical injection is a newly developed method for coding the phase of a gain-switched laser, which meets high requirements placed on transmitters for quantum key distribution: compactness, low losses, compatibility with CMOS technologies, and the absence of undesirable effects leading to the side-channel information leakage. Despite the successful implementation and good prospects for the further development of this system, there is still a lack of theoretical investigations of this scheme in the literature. Here, for the first time, we perform its theoretical analysis. We study the influence of the spontaneous emission noise, examine the role of the gain non-linearity and consider the effect of the temperature drift. The results obtained reveal that these phenomena significantly affect the system performance. We have tried to formulate here practical instructions, which will help to take these features into account when elaborating and employing the optical-injection-based phase modulator.

quant-ph