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Antonin Badura

Publications and source records attributed to Antonin Badura.

5 recordsLinked to original sources

Direct demonstration of time-reversal-symmetry-breaking spin injection from a compensated magnet

The injection, propagation and detection of spin currents are essential physical processes in spintronics. So far, the separation of charge and spin currents was facilitated by the electrical spin injection from a ferromagnet (FM) or the injection by a relativistic spin Hall effect. The devices employed are lateral spin valves comprising spatially separated injection and detection electrodes, connected by a spin-propagation channel. The time-reversal symmetry (TRS) breaking FM spin injection is realized in a geometry with an electrical bias applied between the injection electrode and the channel and is modelled by a conserved spin-polarized drift current. In contrast, the spin injection by the T-symmetric relativistic spin Hall mechanism is driven by an electrical bias applied across the injection electrode alone, and is modelled by a non-conserved spin current transverse to the applied bias. In this work, we use a lateral spin valve with a Mn5Si3 injection electrode to directly demonstrate a TRS-breaking spin injection from a compensated magnet with a vanishing net magnetization. Specifically, the TRS-breaking is demonstrated by the fact that switching between time-reversed states of the compensated magnet changes the detected spin signal. Moreover, the TRS-breaking nature of the spin injection is observed in both experimental geometries with the different electrical biasing, while using the same detection electrode. We show that this unconventional spin-injection is consistent with different magnitudes and propagation angles of electrical currents in the spin-up and spin-down channel in a d-wave altermagnet. Here our symmetry analysis and first-principles calculations are based on the compensated collinear altermagnetic order which has provided a comprehensive microscopic interpretation of earlier structural, magnetic, and anomalous Hall and Nernst measurements in Mn5Si3 thin films.

cond-mat.mes-hall↗

Electrical and thermal magnetotransport in altermagnetic CrSb

Chromium antimonide has emerged as a key material platform for studying altermagnetism because of its simple binary composition, high Néel temperature, and semimetallic electronic structure. Here, we investigate electrical and thermal magnetotransport in single-crystalline CrSb using steady-and pulsed-magnetic fields up to 65 T, and complement these measurements with neutron diffraction and magnetization data. We confirm the compensated magnetic structure and observe a large nonsaturating magnetoresistance together with a pronounced nonlinear Hall response at low temperatures. Multicarrier modeling, supported by mobility-spectrum analysis, reveals coexisting electron- and hole-like charge carriers with mobilities up to ~3000 cm2/Vs and shows that the number of transport channels that can be resolved strongly depends on the accessible magnetic-field range. Thermal-transport measurements further reveal a nonlinear thermal Hall response and a thermal conductivity substantially exceeding a simple Wiedemann-Franz law. The broadly similar field and temperature evolution of electrical and thermal transport point to a dominant electronic contribution, while the remaining deviations indicate additional heat-carrying channels.

cond-mat.mtrl-sci↗

Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions

The component of the resistivity tensor $ρ_{ij}$ corresponding to voltage transverse to both an applied current and a magnetic field can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is often ascribed to experimental artefacts and ignored. Here, we show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner--Wohlfarth modelling. We then apply our approach to magnetotransport measurements of $\rm Mn_5Si_3$ thin films, which undergo a transition from non-collinear to an altermagnetic collinear state. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$~K. Transverse resistivity measurements thus offer a simple and readily available probe of magnetic order transitions.

cond-mat.mes-hall↗

Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method

Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in τ -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales.

cond-mat.mtrl-sci↗

Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations.

cond-mat.mtrl-sci↗