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Antonio Caruso

Publications and source records attributed to Antonio Caruso.

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Octave-spanning 10-GHz Er-doped solid-state optical frequency comb

Optical frequency combs provide a phase-coherent interface between optical and microwave domains, underpinning advances in precision metrology, spectroscopy, and time-frequency transfer. Most conventional comb architectures are limited to sub-gigahertz repetition rates, constraining integration and scalability. Here, we demonstrate a compact, 10-GHz Er-doped solid-state frequency comb operating near the 1550 nm telecommunications window. The system, assembled entirely from commercially available components, produces a coherent spectrum spanning from 1150 nm to 2350 nm with exceptionally low intensity and phase noise. Full frequency stabilization of both pulse repetition and carrier envelope offset frequencies is demonstrated with respect to an RF reference. Comprehensive characterization reveals performance exceeding that of previously reported solid-state combs in power-per-mode and noise suppression. These results establish a robust and accessible platform for multi-gigahertz-repetition-rate comb synthesis, bridging laboratory-grade performance with practical deployment in optical communication, precision timing, and astronomical instrumentation.

physics.optics

A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage

Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its feasibility and limitations, this paper conducts a comprehensive investigation into its accuracy, resolution, and stability towards yielding the structure information of SiC MOSFET using the source-drain voltage as the temperature sensitive electrical parameter. The whole characterization process involves two main procedures and associated key testing parameters, such as gate voltages, sensing and heating currents, etc. Their impacts on both the static and dynamic performances are also investigated with the aim of providing a guideline for conducting a reproducible thermal transient measurement for SiC MOSFETs.

physics.app-ph