arXiv subjects

Antonio Cassinese

Publications and source records attributed to Antonio Cassinese.

6 recordsLinked to original sources

arXiv2025

High-Q cavity coupled to a high permittivity dielectric resonator for sensing applications

The use of high-quality factor resonators is of undoubted interest for high-precision measurements and for applications in quantum technologies. Novel types of microwave sensors can be realized by coupling a first resonator acting as a stable frequency reference with a second resonator that is sensitive to a particular physical quantity. Here we report on a coupled cavity configuration in which a high $Q$ factor elliptical TESLA-shaped superconducting cavity is coupled with a high permittivity ($\varepsilon_\mathrm{r}$) SrTiO$_3$ puck, whose resonant frequency varies as a function of temperature due to the temperature dependence of the permittivity that reaches values higher than 30000 below 1 K. Extensive electromagnetic simulations are used to test different coupling configurations, showing great versatility in tuning the coupling in the weak or strong regime, depending on the puck's position within the cavity. Moreover, for the coupled system, they allow investigation of the dependence of the zero transmission frequency (notch frequency) on changes in permittivity $\varepsilon_\mathrm{r}$, obtaining a maximum value of 2.8 MHz per unit change of $\varepsilon_\mathrm{r}$, for $\varepsilon_\mathrm{r} \approx 230$. Finally, we discuss the use of the coupled system as a sensor that operates in different temperature ranges.

quant-ph↗

arXiv2018

Photophysics of pentacene-doped picene thin films

Here were report a study of picene nano-cristalline thin films doped with pentacene molecules. The thin films were grown by supersonic molecular beam deposition with a doping concentration that ranges between less than one molecules of pentacene every 104 picene molecules up to about one molecule of pentacene every 102 of picene. Morphology and opto-electronic properties of the films were studied as a function of the concentration of dopants. The optical response of the picene films, characterized by absorption, steady-state and time-resolved photoluminescence measurements, changes dramatically after the doping with pentacene. An efficient energy transfer from the picene host matrix to the pentacene guest molecules was observed giving rise to an intense photoluminescence coming out from pentacene. This efficient mechanism opens the possibility to exploit applications where the excitonic states of the guest component, pentacene, are of major interest such as MASER. The observed mechanism could also serve as prototypical system for the study of the photophysics of host guest systems based on different phenacenes and acenes.

cond-mat.mtrl-sci↗

arXiv2015

YBCO microwave resonators for strong collective coupling with spin ensembles

Coplanar microwave resonators made of 330 nm-thick superconducting YBCO have been realized and characterized in a wide temperature ($T$, 2-100 K) and magnetic field ($B$, 0-7 T) range. The quality factor $Q_L$ exceeds 10$^4$ below 55 K and it slightly decreases for increasing fields, remaining 90$\%$ of $Q_L(B=0)$ for $B=7$ T and $T=2$ K. These features allow the coherent coupling of resonant photons with a spin ensemble at finite temperature and magnetic field. To demonstrate this, collective strong coupling was achieved by using DPPH organic radical placed at the magnetic antinode of the fundamental mode: the in-plane magnetic field is used to tune the spin frequency gap splitting across the single-mode cavity resonance at 7.75 GHz, where clear anticrossings are observed with a splitting as large as $\sim 82$ MHz at $T=2$ K. The spin-cavity collective coupling rate is shown to scale as the square root of the number of active spins in the ensemble.

quant-ph↗

arXiv2013

Contact-free probing of interfacial charging and Debye-like charge screening in SiO$_2$/PDI8-CN$_2$ systems by optical second harmonic generation

Investigation of the interfacial electronic properties of N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN2) organic semiconductor films grown on silicon dioxide is performed by polarization-resolved second harmonic generation optical spectroscopy, pointing out a spatial region where charge carriers distribution in the semiconductor lacks inversion symmetry. By developing a model for nonlinear susceptibility in the framework of Debye-Huckel screening theory, we show that the experimental findings can be interpreted as resulting from the presence of a net charge localized at the silicon dioxide, accompanied by a non-uniform charge distribution in the organic semiconductor. Photoluminescence analysis further reinforces this scenario. Reduction-oxidation reactions involving PDI8-CN2 and water molecules are invoked as physical origin of the localized charge. The work outlines a sensitive tool to probe the total charge localized at buried semiconductor/dielectric interfaces in organic thin-film transistors without resorting to invasive contact-based analyses.

cond-mat.mtrl-sci↗

arXiv2012

Very low bias stress in n-type organic single crystal transistors

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are τ~ 2\cdot10^9 s in air and τ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.

cond-mat.mtrl-sci↗

arXiv2008

Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates

We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over the bulk thickness. Surface morphology shows step-like islands, each step being only one monolayer height. The constant and uniform warming of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore, the regular growth kinetic is preserved when increasing the thickness of the film. Electrical measurements on differently structured films evidence the impact of the inter island separation region size on the main charge transport parameters.

cond-mat.mtrl-sci↗