arXiv subjects

Antonio Levy

Publications and source records attributed to Antonio Levy.

6 recordsLinked to original sources

arXiv2026

Photonic Theta Cavity: Engineering Bound States in the Continuum in Topological Resonators Beyond the Limitations of Near Field Coupling

The Theta Cavity is a unique topological resonator architecture which utilizes interferometric coupling to overcome fundamental design limitations associated with near-field evanescent coupling which currently dominates the design space for integrated photonics. The defining device physics is established by the mirror symmetric cross junctions which preserves efficient power transfer between a waveguide and ring resonator creating a strongly correlated phase relationship between the multiple paths. The unique mode selection physics allows for interference driven suppression of radiative pathways enabling strong cavity confinement and the emergence of Bound States in the Continuum (BICs). Analytical models reveal non-Hermitian optical band structure displaying non-trivial topological transitions between BIC and quasi-BIC modes that are robust to attenuation, temperature variations, and typical fabrication non-idealities, which is critical for overcoming intrinsic limitations associated with silicon based integrated photonics. The Theta Cavity architecture also circumvents limitations that arise from proximity requirements of the physical gap used in near-field coupled waveguides which enables a flexible design space for new devices. In this study, we demonstrate phase mediated long-range strong coupling of multiple ring resonators in the Nested Theta Cavity architecture showcasing band structure hybridization resulting in the formation of anti-crossing bandgaps, Dirac crossings, and Fano resonances. The photonic Theta Cavity architecture provides a scalable, topologically robust platform for engineering modes across a multidimensional parameter space with high resilience to perturbation and attenuation, enabling a new approach for the designing of integrated cavity devices.

physics.optics↗

arXiv2022

Algorithms for determining resistances in quantum Hall annuli with p-n junctions

Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at the i=2 plateau and agree with numerical simulations performed with the LTspice circuit simulator. The formulae describing experimental and simulated data are empirically derived for generalized placement of up to three current terminals and accurately reflects observed partial edge channel cancellation. These results support the use of ultraviolet lithography as a way to scale up graphene-based devices with suitably narrow junctions that could be applied in a variety of subfields

cond-mat.mes-hall↗

arXiv2022

Broadband Microwave Spectroscopy for Two-Dimensional Material Systems

In recent years, interesting materials have emerged which are only available as micron-scale flakes, and whose novel physics might be better understood through broadband microwave spectroscopy; examples include twisted bilayer graphene [1], 2D materials in which many-body phases are observed [2], and artificial lattices for analog quantum simulations [3]. Most previous techniques are unfortunately not sensitive for flakes below mm lateral sizes. We propose a simple technique which does not require sophisticated sample preparation nor Ohmic contact and show through theory and simulations that one will be able to qualitatively measure spectral features of interest, and quantitatively measure the frequency-dependent complex conductivity.

cond-mat.mes-hall↗

arXiv2022

Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions

An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene-based devices with multiple source and drain terminals.

cond-mat.mes-hall↗

arXiv2021

A Non-Topological Approach to Understanding Weyl Semimetals

In this work, chiral anomalies and Drude enhancement in Weyl semimetals are separately discussed from a semi-classical and quantum perspective, clarifying the physics behind Weyl semimetals while avoiding explicit use of topological concepts. The intent is to provide a bridge to these modern ideas for educators, students, and scientists not in the field using the familiar language of traditional solid-state physics at the graduate or advanced undergraduate physics level.

cond-mat.other↗

arXiv2012

Graphene growth on h-BN by Molecular Beam Epitaxy

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.

cond-mat.mtrl-sci↗