arXiv subjects

Antonio Supina

Publications and source records attributed to Antonio Supina.

2 recordsLinked to original sources

arXiv2026

Observation of correlation-driven topological transport and robust ferromagnetism in 2D CrS$_2$

The realization of correlated layered magnets hosting robust ferromagnetism with emergent topological transport remains a key challenge in quantum materials. Here we report the first catalyst-free chemical vapour deposition growth of layered 1T-CrS$_2$, establishing a highly stable vdWs ferromagnet with an out-of-plane easy-axis anisotropy and a Curie temperature above room temperature. Transport measurements reveal a semimetal--insulator crossover near 80 K and pronounced negative magnetoresistance up to 350 K. A topological Hall effect emerges below 30 K, a rare signature of correlated transport in layered transition-metal dichalcogenide ferromagnets. First-principles calculations show that spin--orbit coupling gaps Dirac-like crossings, while electronic correlations reconstruct the Fermi surface by suppressing electron pockets and reducing the carrier density, enhancing momentum-dependent out-of-plane spin polarization. Magnetic measurements, supported by Heisenberg exchange calculations, reveal strong nearest-neighbour ferromagnetic exchange that stabilizes long-range ferromagnetism. Our results establish 1T-CrS$_2$ as a rare correlated 3$d$ layered ferromagnet in which electronic correlations and spin--orbit coupling cooperatively drive emergent topological transport.

cond-mat.mtrl-sci↗

arXiv2022

Single Crystalline 2D Material Nanoribbon Networks for Nanoelectronics

The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials due to the absence of synthesis routes. Here, we propose a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, sufficient yield, narrow size distribution, and straight-forward device integrability. The wide applicability of this technique is demonstrated by fabricating MoS2, WS2, WSe2, and graphene nanoribbon field effect transistors that inherently do not suffer from interconnection resistances. By relying on self-assembled and self-aligned organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon's edges. Electrical characterization shows record mobilities and very high ON currents for various TMDCs despite extreme width scaling. Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way towards the development of nanoribbon-based plasmonic sensing and opto-electronic devices.

physics.app-ph↗