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Antonis Olziersky

Publications and source records attributed to Antonis Olziersky.

4 recordsLinked to original sources

Bidirectional microwave-optical conversion with an integrated soft-ferroelectric barium titanate transducer

Efficient, low-noise, and high-bandwidth transduction between optical and microwave photons is key to long-range quantum communication between distant superconducting quantum processors. Recent demonstrations of microwave-optical transduction using the broadband direct electro-optic (Pockels) effect in optical thin films made of AlN or LiNbO$_3$ have shown promise. To improve efficiency and added noise, materials with larger Pockels coefficients, such as the soft ferroelectrics BaTiO$_3$ or SrTiO$_3$, are required. However, these materials require adapted designs and fabrication approaches due to their nonlinear and, in some cases, hysteretic electro-optic response. Here, we engineer an on-chip, triply resonant transducer comprising low-loss BaTiO$_3$-on-SiO$_2$ waveguides monolithically integrated with a superconducting microwave resonator made of Nb. We demonstrate bidirectional microwave-optical transduction and reach total off-chip efficiencies of $1\times10^{-6}$ using pulsed pumping. Our novel device concept permits in-situ poling of the ferroelectric material without introducing excess microwave loss, using a fully subtractive fabrication process with superconducting air bridges. In addition, we investigate optically induced heating, revealing fast thermalization and quasiparticle resilience of the microwave resonator. Our transducer concept and fabrication process are applicable to other materials with a large bias-induced Pockels effect and pave the way for efficient, low-power quantum interconnects.

physics.optics

Perovskite nanocrystal self-assemblies in 3D hollow templates

Highly ordered nanocrystal (NC) assemblies, namely superlattices (SLs), have been investigated as novel building blocks of optical and optoelectronic devices due to their unique properties based on interactions among neighboring NCs. In particular, lead halide perovskite NC SLs have attracted significant attention, owing to their extraordinary optical characteristics of individual NCs and collective emission processes like superfluorescence (SF). So far, the primary method for preparing perovskite NC SLs has been the drying-mediated self-assembly method, in which the colloidal NCs spontaneously assemble into SLs during solvent evaporation. However, this method lacks controllability because NCs form random-sized SLs at random positions on the substrate rendering NC assemblies in conjunction with device structures such as photonic waveguides or microcavities challenging. Here, we demonstrate template-assisted self-assembly to deterministically place perovskite NC SLs and control their geometrical properties. A solution of CsPbBr3 NCs is drop-casted on a substrate with lithographically-defined hollow structures. After solvent evaporation and removal of excess NCs from the substrate surface, NCs only remain in the templates thereby defining the position and size of these NC assemblies. We performed photoluminescence (PL) measurements on these NC assemblies and observed signatures of SF, similar as in spontaneously assembled SLs. Our findings are crucial for optical devices that harness embedded perovskite NC assemblies and prepare fundamental studies on how these collective effects can be tailored through the SL geometry.

cond-mat.soft

Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture

Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.

cond-mat.mes-hall

Optimized Graphene Electrodes for contacting Graphene Nanoribbons

Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.

cond-mat.mes-hall