arXiv subjects
Publications and source records attributed to Antti-Pekka Jauho.
A microscopic calculation of the perpendicular current in doped multiple quantum wells is presented. Interface roughness is shown to affect the resonant transitions as well as to cause a nonresonant background current. The theoretical characteristics exhibit several branches due to the formation of electric field domains in quantitative agreement with experimental data.
We present a microscopic calculation of transport in strongly doped superlattices where domain formation is likely to occur. Our theoretical method is based on a current formula involving the spectral functions of the system, and thus allows, in principle, a systematic investigation of various interaction mechanisms. Taking into account impurity scattering and optical phonons we obtain a good quantitative agreement with existing experimental data from Helgesen and Finstad (J. Appl. Phys. 69, 2689, (1991)). Furthermore the calculated spectral functions indicate a significant increase of the average intersubband spacing compared to the bare level differences which might explain the experimental trend.
We present an analytical study of one-dimensional semiconductor superlattices in external electric fields, which may be time-dependent. A number of general results for the (quasi)energies and eigenstates are derived. An equation of motion for the density matrix is obtained for a two-band model, and the properties of the solutions are analyzed. An expression for the current is obtained. Finally, Zener-tunneling in a two-band tight-binding model is considered. The present work gives the background and an extension of the theoretical framework underlying our recent Letter [J. Rotvig {\it et al.}, Phys. Rev. Lett. {\bf 74}, 1831 (1995)], where a set of numerical simulations were presented.
We report a fully microscopic theory for transconductivity, or, equivalently, momentum transfer rate, of Coulomb coupled electron systems. We use the Kubo linear response formalism, and our main formal result expresses the transconductivity in terms of two fluctuation diagrams, which are topologically related, but not equivalent to, the Aslamazov-Larkin diagrams known for superconductivity. Previously reported results are shown to be special cases of our general expression; specifically, for constant impurity scattering rates, we recover the Boltzmann equation results in the semiclassical clean limit, and the memory function results in dirty systems. Furthermore, we show that for energy dependent relaxation times, the final result is not expressible in terms of standard density-response functions. Other new results include: (i) at T=0, the frequency dependence of the transfer rate is found to be proportional to $Ω$ and $Ω^2$ for frequencies below and above the impurity scattering rate, respectively and (ii) the weak localization correction to the transconductivity is given by $δσ^{WL}_{21} \propto δσ^{WL}_{11} +δσ^{WL}_{22}$.
We consider a mesoscopic region coupled to two leads under the influence of external time-dependent voltages. The time dependence is coupled to source and drain contacts, the gates controlling the tunnel- barrier heights, or to the gates which define the mesoscopic region. We derive, with the Keldysh nonequilibrium Green function technique, a formal expression for the fully nonlinear, time-dependent current through the system. The analysis admits arbitrary interactions in the mesoscopic region, but the leads are treated as noninteracting. For proportionate coupling to the leads, the time-averaged current is simply the integral between the chemical potentials of the time-averaged density of states, weighted by the coupling to the leads, in close analogy to the time-independent result of Meir and Wingreen (PRL {\bf 68}, 2512 (1992)). Analytical and numerical results for the exactly solvable non-interacting resonant-tunneling system are presented.
We present a general formulation of the nonlinear, time-dependent current through a small interacting region, where electron energies are changed by time-dependent voltages. An exact solution is obtained for the non-interacting case when the elastic coupling to the leads is independent of energy. Temporal phase coherence in a double-barrier tunneling structure produces ``ringing" in the response of the current to a voltage pulse, which can be observed experimentally in the dc-current by varying the pulse length in a train of voltage pulses. The nonlinear current due to an ac-bias also shows complex time-dependence.
The Coulomb contribution to the temperature-dependent rate of momentum transfer, $1/τ_D$, between two electron systems in parallel layers is determined by setting up two coupled Boltzmann equations, with the boundary condition that no current flows in the layer where an induced voltage is measured. The effective Coulomb interaction between the layers is determined selfconsistently, allowing for the finite thickness of the layers. As $T\rightarrow 0$, we find that $1/τ_DT^2$ approaches a constant value. At higher temperatures $1/τ_DT^2$ exhibits a maximum at $T=T_{\rm max}$ and then decreases as $1/T$ with increasing temperature. The value of $T_{\rm max}$ depends on the layer separation $d$ according to $T_{\rm max}\propto d^{-α}$, where $α\simeq 0.8$. The overall magnitude of the calculated $1/τ_D$ is approximately one half of the results of a recent experiment, suggesting that other mechanisms of momentum transfer may be important.