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Aolin Li

Publications and source records attributed to Aolin Li.

6 recordsLinked to original sources

HeadRank: Decoding-Free Passage Reranking via Preference-Aligned Attention Heads

Decoding-free reranking methods that read relevance signals directly from LLM attention weights offer significant latency advantages over autoregressive approaches, yet suffer from attention score homogenization: middle-context documents receive near-identical scores, destroying the fine-grained distinctions required for ranking. We propose HeadRank, a framework that lifts preference optimization from discrete token space into the continuous attention domain through entropy-regularized head selection, hard adjacent-level preference pairs, and a distribution regularizer that jointly sharpen discriminability in the homogenized middle zone. Depth truncation at the deepest selected layer further reduces inference to $\mathcal{O}(1)$ forward passes. Across 14 benchmarks on three Qwen3 scales (0.6B--4B) using only 211 training queries, HeadRank achieves the highest average NDCG@10 at every scale, outperforming both generative and decoding-free baselines on the majority of benchmarks with 100\% formatting success. At 4B, 57.4\% of relevant middle-zone documents reach the top quartile versus 14.2\% for irrelevant ones -- a 43-percentage-point selectivity gap that demonstrates the effectiveness of attention-space preference alignment for listwise reranking.

cs.IR

Two-Dimensional Spin-Antiferroelectric Altermagnets with Giant Spin Splitting: From Model to Material Realization

The realization of multiferroic altermagnets featuring giant intrinsic spin splitting, hold great promise for next-generation spintronics. In this work, based on the recently proposed concept of spin-antiferroelectric (spin-AFE), we construct a class of two-dimensional (2D) multiferroic altermagnets, termed 2D spin-antiferroelectric altermagnets (2D spin-AFEAMs), enabling electrical control of spin polarization via a gate field. Furthermore, we propose a general design strategy for constructing 2D spin-AFEAMs with large intrinsic spin splitting. Guided by this strategy, we predict monolayer $(\mathrm{CoCl})_2\mathrm{Te}$ and its family materials as potential candidates of 2D spin-AFEAM. We uncover a highly tunable transport regime in monolayer $(\mathrm{CoCl})_2\mathrm{Te}$, where the spin current can be switched via the in-plane electric field angle when hole-doped, and via the gate field polarity when electron-doped. Our work enriches the family of 2D multiferroics and provides a blueprint for realizing high-performance, electrically switchable altermagnetic spintronic devices.

cond-mat.mtrl-sci

A Dual-Gate Altermagnetic Tunnel Junction Based on Bilayer Cr$_{2}$SeO

Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report electrostatically controllable spin-momentum locking in bilayer Cr$_{2}$SeO and design a dual-gate altermagnetic tunnel junction (AMTJ), which can switch between high and low resistance states without switching the N\'eel vector. First-principles calculations demonstrate that vertical electric field can induce significant spin splitting in bilayer Cr$_{2}$SeO. Reversing the electric field direction can alter the spin-momentum locking in bilayer Cr$_{2}$SeO. Leveraging this electric-field-tunable spin splitting, the dual-gate AMTJ exhibits an ultrahigh tunneling magnetoresistance (TMR) ratio of $10^{7}$. This work provides theoretical support for the design of fully electrically controlled AMTJs and demonstrates their great potential for applications in spintronic devices.

cond-mat.mtrl-sci

When & How to Write for Personalized Demand-aware Query Rewriting in Video Search

In video search systems, user historical behaviors provide rich context for identifying search intent and resolving ambiguity. However, traditional methods utilizing implicit history features often suffer from signal dilution and delayed feedback. To address these challenges, we propose WeWrite, a novel Personalized Demand-aware Query Rewriting framework. Specifically, WeWrite tackles three key challenges: (1) When to Write: An automated posterior-based mining strategy extracts high-quality samples from user logs, identifying scenarios where personalization is strictly necessary; (2) How to Write: A hybrid training paradigm combines Supervised Fine-Tuning (SFT) with Group Relative Policy Optimization (GRPO) to align the LLM's output style with the retrieval system; (3) Deployment: A parallel "Fake Recall" architecture ensures low latency. Online A/B testing on a large-scale video platform demonstrates that WeWrite improves the Click-Through Video Volume (VV$>$10s) by 1.07% and reduces the Query Reformulation Rate by 2.97%.

cs.IR

Spin-chirality-dependent modulation of topological gap, Chern number, and valley-polarization in monolayer kagome lattice Cr3Se4

Kagome materials exhibit unique electronic properties, such as the quantum anomalous Hall effect. The control of Chern numbers is critical for quantum device manipulation, but existing research has mainly focused on collinear magnetization while neglecting chiral spin textures. Through first-principles calculations and tight-binding modeling of monolayer Cr3Se4, this study reveals spin-chirality-dependent control of topological gaps, Chern numbers, and valley polarization in kagome materials. The results demonstrate that the azimuthal angle has no observable effect. For collinear magnetization (\k{appa} = 0) or spin-chirality \k{appa} = -1, the topological bandgap decreases as the spin orientation approaches the in-plane direction. Conversely, increasing the polar angle enhances the bandgap for \k{appa} = 1. In the breathing kagome lattice, the degeneracy between K and K' valleys is lifted. As the gap undergoes sequential closure and reopening in the two valleys, the structural asymmetry and spin-chirality allow for controlled tuning of the topological gap, Chern number, and valley polarization. Moreover, the emergence of a topological Hall effect is is also demonstrated. These findings provide strategies for controlling topological states and advancing applications in quantum devices and valleytronic systems.

cond-mat.mtrl-sci

Multiple Topological Phases Controlled via Strain in Two-Dimensional Altermagnets

Altermagnets (AMs) are an emergent class of magnetic materials that combine properties of ferromagnets and antiferromagnets, exhibiting spin-polarized Fermi surfaces and zero net magnetic moment due to combined time-reversal and crystal symmetry. Here, we construct a Kondo-lattice model on a two-dimensional square Lieb lattice to investigate the topological properties of AMs. We identify a type-II quantum spin Hall state characterized by spin-polarized counterpropagating edge states. Breaking the $C_{4z}\mathcal{T}$ symmetry, which connects magnetic sublattices, induces a transition to a quantum anomalous Hall state. We further establish a strain-induced mechanism to control these topological phase transitions and present the corresponding phase diagram. Finally, we demonstrate the predicted transitions in monolayer CrO, a realistic altermagnetic candidate, using first-principles calculations. Our findings highlight the potential of 2D AMs as a versatile platform for topological spintronics, enabling strain-tunable helical and chiral edge states within a single system.

cond-mat.mes-hall