arXiv subjects

Aparna Chakrabarti

Publications and source records attributed to Aparna Chakrabarti.

At least 19 recordsLinked to original sources

arXiv2024

Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer

Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBi$_{2}$Te$_4$ (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with density functional theory (DFT), reveals stanene related bands such as two hole-like bands and an inverted parabolic band around the $\overlineΓ$ point. An outer hole-like band traverses the Fermi level (\ef) and gives rise to a hexagonal Fermi surface, showing that stanene on MBST is metallic. In contrast, a bandgap of 0.8 eV is observed at the $\overline{K}$ point. We find that DFT shows good agreement with ARPES only when the BL and hydrogen passivation of the top Sn layer are considered in the calculation. Scanning tunneling microscopy (STM) establishes the honeycomb buckled structure of stanene. A stanene-related component is also detected in the Sn $d$ core level spectra, in addition to a BL-related component. The BL, which forms because of the chemical bonding between Sn and the top two layers of MBST, has an ordered crystal lattice with random anti-site defects. The composition of the BL is estimated to be Sn:Te:Bi/Sb $\approx$ 2:1:1 from x-ray photoelectron spectroscopy. Low energy electron diffraction shows that the lattice constant of stanene is marginally larger than that of MBST, and the STM result aligns with this. The BL bridges this disparity and provides a platform for stanene growth.

cond-mat.mtrl-sci↗

arXiv2024

Kramers nodal line in the charge density wave state of YTe$_3$ and the influence of twin domains

Recent studies have focused on the relationship between charge density wave (CDW) collective electronic ground states and nontrivial topological states. Using angle-resolved photoemission and density functional theory, we establish that YTe$_3$ is a CDW-induced Kramers nodal line (KNL) metal, a newly proposed topological state of matter. YTe$_3$ is a non-magnetic quasi-2D chalcogenide with a CDW wave vector ($q_{\rm cdw}$) of 0.2907c$^*$. Scanning tunneling microscopy and low energy electron diffraction revealed two orthogonal CDW domains, each with a unidirectional CDW and similar YTe$_3$. The effective band structure (EBS) computations, using DFT-calculated folded bands, show excellent agreement with ARPES because a realistic x-ray crystal structure and twin domains are considered in the calculations. The Fermi surface and ARPES intensity plots show weak shadow bands displaced by $q_{\rm cdw}$ from the main bands. These are linked to CDW modulation, as the EBS calculation confirms. Bilayer split main and shadow bands suggest the existence of crossings, according to theory and experiment. DFT bands, including spin-orbit coupling, indicate a nodal line along the $Σ$ line from multiple band crossings perpendicular to the KNL. Additionally, doubly degenerate bands are only found along the KNL at all energies, with some bands dispersing through the Fermi level.

cond-mat.mtrl-sci↗

arXiv2024

Intrinsic and extrinsic plasmons in the hard x-ray photoelectron spectra of nearly free electron metals

Collective plasmon excitations in solids that result from the process of photoemission are an important area of fundamental research. In this study, we identify a significant number ($n$) of multiple bulk plasmons ($nω_p$) in the hard x-ray photoelectron spectra of the core levels and valence bands (VBs) of two well-known, nearly free electron metals, aluminum (Al) and magnesium (Mg). On the basis of earlier theoretical works, we estimate the contributions of extrinsic, intrinsic, and interference processes to the intensities of 1$s$ to 2$s$ core level plasmons. The intrinsic contribution diminishes from 22% for 1$ω_p$, to 4.4% for 2$ω_p$, and becomes negligible thereafter (0.5% for 3$ω_p$). The extrinsic and intrinsic plasmon contributions do not vary significantly across a broad range of photoelectron kinetic energies, and also between the two metals (Al and Mg). The interference contribution varies from negative to zero as $n$ increases. An asymmetric line shape is observed for the bulk plasmons, which is most pronounced for 1$ω_p$. Signature of the surface plasmon is detected in normal emission, and it exhibits a significantly increased intensity in the grazing emission. The VB spectra of Al and Mg, which are dominated by $s$-like states, exhibit excellent agreement with the calculated VB based on density functional theory. The VB exhibits four multiple bulk plasmon peaks in the loss region, which are influenced by an intrinsic process in addition to the extrinsic process. On a completely oxidized aluminum surface, the relative intensity of the Al metal bulk plasmon remains nearly unaltered, while the surface plasmon is completely attenuated.

cond-mat.mtrl-sci↗

arXiv2023

Coherent Tunneling and Strain Sensitivity of an All Heusler Alloy Magnetic Tunneling Junction: A First-Principles Study

Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi level, ultra-low Gilbert damping, and high Curie temperature. In this comprehensive study, employing density functional theory, we delve into the stability and electron transport properties of a magnetic tunneling junction (MTJ) comprising a Co$_2$MnSb/HfIrSb interface. Utilizing a standard model given by Julliere, we estimate the tunnel magnetoresistance (TMR) ratio of this heterojunction under external electric field, revealing a significantly high TMR ratio (500%) that remains almost unaltered for electric field magnitudes up to 0.5 V/A. In-depth investigation of K-dependent majority spin transmissions uncovers the occurrence of coherent tunneling for the Mn-Mn/Ir interface, particularly when a spacer layer beyond a certain thickness is employed. Additionally, we explore the impact of bi-axial strain on the MTJ by varying the in-plane lattice constants between -4% and +4%. Our spin-dependent transmission calculations demonstrate that the Mn-Mn/Ir interface manifests strain-sensitive transmission properties under both compressive and tensile strain, and yields a remarkable three-fold increase in majority spin transmission under tensile strain conditions. These compelling outcomes place the Co2MnSb/HfIrSb junction among the highly promising candidates for nanoscale spintronic devices, emphasizing the potential significance of the system in the advancement of the field.

physics.app-ph↗

arXiv2023

Bulk Electronic Structure of Ni2MnGa studied by Density Functional Theory and Hard X-ray Photoelectron Spectroscopy

A combined study employing density functional theory (DFT) using the experimentally determined modulated structures and bulk-sensitive hard x-ray photoelectron spectroscopy on single-crystalline Ni$_2$MnGa is presented in this work. For the aforementioned modulated structures, all of the characteristic features in the experimental valence band (VB) are in excellent agreement with the theoretical VB calculated from DFT, evincing that it is the true representation of Ni$_2$MnGa in the martensite phase. We establish the existence of a charge density wave (CDW) state in the martensite phase from the shape of the VB near $E_F$ that shows a transfer of spectral weight in excellent agreement with DFT. Furthermore, presence of a pseudogap is established by fitting the near $E_F$ region with a power law function predicted theoretically for the CDW phase. Thus, the present work emphasizes that the atomic modulation plays an important role in hosting the CDW phase in bulk stoichiometric Ni$_2$MnGa.

cond-mat.mtrl-sci↗

arXiv2023

Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide

Using electronic structure calculations based on density functional theory, we predict and study the structural, mechanical, electronic, magnetic and transport properties of a new full Heusler chalcogenide, namely, Fe$_2$CrTe, both in bulk and heterostructure form. The system shows a ferromagnetic and half-metallic(HM) like behavior, with a very high (about 95%) spin polarization at the Fermi level, in its cubic phase. Interestingly, under tetragonal distortion, a clear minimum (with almost the same energy as the cubic phase) has also been found, at a c/a value of 1.26, which, however, shows a ferrimagnetic and fully metallic nature. The compound has been found to be dynamically stable in both the phases against the lattice vibration. The elastic properties indicate that the compound is mechanically stable in both the phases, following the stability criteria of the cubic and tetragonal phases. The elastic parameters unveil the mechanically anisotropic and ductile nature of the alloy system. Due to the HM-like behavior of the cubic phase and keeping in mind the practical aspects, we probe the effect of strain as well as substrate on various physical properties of this alloy. Transmission profile of the Fe$_2$CrTe/MgO/Fe$_2$CrTe heterojunction has been calculated to probe it as a magnetic tunneling junction (MTJ) material in both the cubic and tetragonal phases. Considerably large tunneling magnetoresistance ratio (TMR) of 1000% is observed for the tetragonal phase, which is found to be one order of magnitude larger than that of the cubic phase.

cond-mat.mtrl-sci↗

arXiv2022

Charge density wave induced nodal lines in LaTe$_3$

LaTe$_3$ is a noncentrosymmetric (NC) material with time reversal (TR) symmetry in which the charge density wave (CDW) is hosted by the Te bilayers. Here, we show that LaTe$_3$ hosts a Kramers nodal line (KNL), a twofold degenerate nodal line that connects the TR invariant momenta in NC achiral systems, using angle resolved photoemission spectroscopy (ARPES), density functional theory (DFT), effective band structure (EBS) calculated by band unfolding, and symmetry arguments. DFT incorporating spin-orbit coupling (SOC) reveals that the KNL -- protected by the TR and lattice symmetries -- imposes gapless crossings between the bilayer-split CDW-induced shadow bands and the main bands. In excellent agreement with the EBS, ARPES data corroborate the presence of the KNL and show that the crossings traverse the Fermi level. Furthermore, spinless nodal lines - entirely gapped out by the SOC - are formed by the linear crossings of the shadow and main bands with a high Fermi velocity.

cond-mat.mtrl-sci↗

arXiv2021

Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices

GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin relaxation in the satellite X-valley of indirect band gap Al0.63Ga0.37As epitaxial layers through polarization resolved photo-luminescence excitation spectroscopy. Solving the rate equations, steady state electronic distribution in various valleys of AlxGa1-xAs is estimated against continues photo carrier generation and an expression for the degree of circular polarization (DCP) of photoluminescence coming from the adjacent quantum well (QW) is derived. Amalgamating the experimental results with analytical expressions, the X-valley electron spin relaxation time (τ_S^X) is determined to be 2.7 +/- 0.1 ps at 10 K. To crosscheck its validity, theoretical calculations are performed based on Density Functional Theory within the framework of the projector augmented wave method, which support the experimental result quite well. Further, temperature dependence of τ_S^X is studied over 10-80 K range, which is explained by considering the intra-valley scattering of carriers in the X-valley of indirect band gap AlGaAs barrier layer. It is learnt that the strain induced modification of band structure lifts the degeneracy in X-valley, which dominates the electron spin relaxation beyond 50 K. Furthermore, the DCP spectra of hot electrons in indirect band gap AlGaAs layers is found to be significantly different compared to that of direct bandgap AlGaAs. It is understood as a consequence of linear k dependent Dresselhaus spin splitting and faster energy relaxation procedure in the X-valley. Findings of this work could provide a new horizon for the realization of next generation spin-photonic devices which are less sensitive to Joule heating.

cond-mat.mtrl-sci↗

arXiv2019

Electronic structure of Au-Sn compounds grown on Au(111)

The electronic structure of Au-Sn intermetallic layers of different compositions grown on Au(111) to the thickness of several nanometers has been studied in this work. The layer, interface and the substrate related components in the Au 4$f$ and Sn 4$d$ core-level spectra obtained using x-ray photoelectron spectroscopy (XPS) vary with deposition parameters to reveal the details of the Au-Sn formation. While AuSn is grown by deposition at room temperature, Au rich compounds form as a result of heat treatment through inter diffusion of Au and Sn. Deposition at high temperature forms more Au rich compositions compared to post annealing at the same temperature due to the kinetic energy of the impinging Sn atoms in the former case. Post annealing, on the other hand, stabilizes the bulk phases such as AuSn and Au$_5$Sn and exhibits an activated behavior for transition from the former to the latter with increasing temperature. The XPS valence band spectra of AuSn and Au$_{5}$Sn layers show good agreement with the density functional theory calculation, indicating that these have the bulk structure reported in literature. However, the influence of anti-site defects is observed in Au$_5$Sn. Low energy electron diffraction study reveals that although the AuSn layer is ordered, its top surface is disordered at room temperature. Surface order is obtained by annealing or deposition at elevated temperatures and dispersing bands are observed by angle resolved photoemission spectroscopy. Both electron-like and hole-like bands are evident for the ($\sqrt{3}$$\times$$\sqrt{3}$)R30$^{\circ}$ phase, while a nearly free electron-like parabolic surface state is observed for the p(3$\times$3)R15$^{\circ}$ phase.

cond-mat.mtrl-sci↗

arXiv2019

Enhancement of the density of states at the Fermi level due to oxygen atoms in noble metals

The interaction of oxygen with noble metals such as silver has been an important topic of research for many decades. Here, we show occurrence of a peak in the density of states (DOS) at the Fermi level ($E_F$) when oxygen atoms occupy disordered substitutional positions in noble metals such as Ag, Au or Ag-Au alloy. This results in large enhancement of DOS at $E_F$ with respect to Ag or Au metal. Its origin is attributed to O 2$p$ related disorder broadened flat band that straddles almost all the high symmetry directions of the Brillouin zone. Our work suggests that if a large concentration of disordered oxygen can be realized in nano-structures of noble metals, it may lead to interesting phenomenon.

cond-mat.mtrl-sci↗

arXiv2019

Prediction of Two-Dimensional Monochalcogenides: MoS and WS

Using density functional theory, we explore the possibility of two monolayer monochalcogenides, namely, MoS and WS (buckled and puckered). Our results on cohesive energy and phonon dispersion predict that the buckled structures of both MoS and WS are stable. On the other hand, while the puckered structure of WS clearly shows a dynamical instability, the same for MoS may have a stable configuration. Charge analyses predict ionic-like bonding in these systems. Density of states and band structure reveal a non-magnetic metallic nature for MoS in the stable configurations. However, for the buckled WS, our study predicts a non-magnetic semi-metallic nature. Further, semi-metal to indirect semiconductor transition has been observed for tensile strain of 5%, 6% and 8%.

cond-mat.mtrl-sci↗

arXiv2018

Dirac cone in a non-honeycomb surface alloy

We demonstrate unexpected occurrence of linear bands resembling Dirac cone at the zone-center of Au$_2$Sn surface alloy with $\left( \begin{smallmatrix} 2&1\\ 1&3 \end{smallmatrix} \right)$ surface structure formed by deposition of about 0.9 ML Sn on Au(111) at elevated temperature. The surface exhibits an oblique symmetry with unequal lattice constants making it the first two dimensional surface alloy to exhibit Dirac cone with a non-honeycomb lattice.

cond-mat.mtrl-sci↗

arXiv2018

Influence of anti-site disorder and electron-electron correlations on the electronic structure of CeMnNi$_4$

CeMnNi$_4$ exhibits an unusually large spin polarization, but its origin has baffled researchers for more than a decade. We use bulk sensitive hard x-ray photoelectron spectroscopy (HAXPES) and density functional theory based on the Green's function technique to demonstrate the importance of electron-electron correlations of both the Ni 3$d$ ($U_{Ni}$) and Mn 3$d$ ($U_{Mn}$) electrons in explaining the valence band of this multiply correlated material. We show that Mn-Ni anti-site disorder as well as $U_{Ni}$ play crucial role in enhancing its spin polarization: anti-site disorder broadens a Ni 3$d$ minority-spin peak close to the Fermi level ($E_F$), while an increase in $U_{Ni}$ shifts it towards $E_F$, both leading to a significant increase of minority-spin states at $E_F$. Furthermore, rare occurrence of a valence state transition between the bulk and the surface is demonstrated highlighting the importance of HAXPES in resolving the electronic structure of materials unhindered by surface effects.

cond-mat.mtrl-sci↗

arXiv2018

Presence of atomic disorder and its effect on magnetic and electronic properties of NiCrGa half Heusler alloy

In this work, polycrystalline NiCrGa half Heusler alloy, which is predicted to be half-metallic ferromagnet from first principles calculations, has been synthesized by arc meting technique and its structural, magnetic as well as the electronic properties have been studied. The measured x-ray diffraction (XRD) pattern shows the signature of a disordered structure. From the magnetization measurements, there is no evidence of ferromagnetic ordering observed in this system down to the lowest temperature studied. Instead, the system shows the signature of an antiferromagnetic ordering at very low temperature. The experimentally observed structural and magnetic properties are found to be significantly different from the theoretically predicted properties of the ordered cubic C1b structure. To probe the possible disorder present in the system and its effect on the magnetic properties, we have carried out first principles calculations using the spin-polarized-relativistic Korringa-Kohn-Rostoker method (SPR-KKR). Using a combination of XRD, photoelectron spectroscopy, magnetization measurements and first principles calculations, we conclude that NiCrGa has significant amount of atomic disorder. Although, the ordered structure is energetically more stable than the disordered structures, we find that after synthesis, the system tends to stabilize in a disordered structure. With this atomic disorder present in the sample, the ferromagnetic ordering is disturbed and the calculated spin polarization is consequently reduced.

cond-mat.mtrl-sci↗

arXiv2018

An experimental and Ab-initio study of Electronic and Magnetic properties of FeGa3

Electronic structure of FeGa3 has been studied using experiments and ab-initio calculations. Magnetization measurements show that FeGa3 is inherently diamagnetic in nature. Our studies indicate that the previously reported magnetic moment on the Fe atoms in FeGa3 is not an intrinsic property of FeGa3, but is primarily due to the presence of disorder, defects, grain boundaries etc that break the symmetry about the Fe dimers. Analysis of the results obtained from magnetic measurements, photoelectron spectroscopy, Fe K-edge X-ray absorption near edge spectroscopy and ab-initio calculations clearly indicates that, the effects of on-site Coulomb repulsion between the Fe 3d electrons do not play any role in determining the electronic and magnetic properties of FeGa3. Detailed analysis of results of single crystal and poycrystalline FeGa3, helps to resolve the discrepancy in the electronic and magnetic properties in FeGa3 existing in the literature, consistently.

cond-mat.mtrl-sci↗

arXiv2017

Co$_{2}$PtGa: A promising magnetic shape memory alloy with high martensite transition temperature

In the present work, a combined theoretical and experimental study on Co$_{2}$PtGa Heusler alloy shows that it exhibits a martensite transition around 1320 K with a small thermal hysteresis (10 K). Dynamical stability of Co$_2$PtGa in the tetragonal phase has been established by the theoretically calculated phonon dispersion curves. Magnetization measurements suggest that this alloy is a ferromagnetic material with a saturation magnetic moment of 2.83 $μ_B$/f.u. at 2 K, which is in excellent agreement with the value obtained from \textit{ab-initio} calculations (2.87 $μ_B$/f.u.). Our present study demonstrates that Co$_{2}$PtGa is a promising material for high temperature magnetic shape memory application.

cond-mat.mtrl-sci↗

arXiv2017

Half-metallicity versus Symmetry in Pt, Ni and Co-based Half Heusler Alloys: A First-principles Calculation

Using first principles calculations based on density functional theory, we study the geometric, electronic, and magnetic properties of Pt, Ni and Co-based half Heusler alloys, namely, Pt$BC$, Ni$BC$ and Co$BC$ ($B$ = Cr, Mn and Fe; $C$ = Al, Si, P, S, Ga, Ge, As, Se, In, Sn, Sb and Te). We calculate the formation energy of these alloys in various crystal symmetries, which include, the (face-centered) cubic $C1_{b}$ ($F\bar{4}$3m), orthorhombic ($Pnma$), as well as hexagonal ($P\bar{6}2m$ and $P6_{3}/mmc$) structures. It has been observed that out of all the 108 structures, studied here, energetically stable cubic structure is observed for only 18 materials. These alloys are primarily having either a $C$ atom or an $A$ atom with a high atomic number. We also observe that along with the alloys with $C$ atoms from group IIIA, IVA and VA -- alloys with $C$ atoms from group VIA are also found to be, by and large, energetically stable. To examine the relative stabilities of different symmetries in order to search for the respective lowest energy state for each of the above-mentioned systems, as well as to find whether a material in the ground state is half-metallic or not, we analyze the formation energy, and the electronic density of states, in detail. Based on these analyses, the possibility of existence of any {\it one-to-one relationship} between the {\it cubic symmetry} and the {\it half-metallicity} in these half Heusler alloys is probed. Subsequently, we predict about the existence of a few new {\it non-cubic} half Heusler alloys with substantially low density of states at one of the spin channels and reasonably {\it high spin polarization at the Fermi level}

cond-mat.mtrl-sci↗

arXiv2017

High pressure studies on properties of FeGa3: role of on-site coulomb correlation

High pressure X-ray diffraction measurements have been carried out on the intermetallic semiconductor FeGa$_3$ and the equation of state for FeGa$_3$ has been determined. First principles based DFT calculations within the GGA approximation indicate that although the unit cell volume matches well with the experimentally obtained value at ambient pressure, it is significantly underestimated at high pressures and the difference between them increases as pressure increases. GGA + U calculations with increasing values of U$_{Fe(3d)}$ (on-site Coulomb repulsion between the Fe 3d electrons) at high pressures, correct this discrepancy. Further, the GGA+U calculations also show that along with U$_{Fe(3d)}$, the Fe 3d band width also increases with pressure and around a pressure of 4 GPa, a small density of states appear at the Fermi level. High pressure resistance measurements carried out on FeGa$_3$ also clearly show a signature of an electronic transition. Beyond the pressure of 19.7 GPa, the diffraction peaks reduce in intensity and are not observable beyond $\sim$ 26 GPa, leading to an amorphous state.

cond-mat.mtrl-sci↗