arXiv subjects

Aranya Goswami

Publications and source records attributed to Aranya Goswami.

12 recordsLinked to original sources

arXiv2026

Bosonic Error Correction with Fluxonium

Bosonic quantum error correction (QEC) offers a hardware-efficient route to fault-tolerant quantum computing. To date, however, superconducting circuit implementations of bosonic codes have utilized centimeter-scale 3D microwave cavities controlled by fixed-frequency transmon qubits, with logical lifetimes limited by transmon bit-flip errors. Here, we realize bosonic QEC in a fully planar architecture by pairing a heavy fluxonium, whose $451 \pm 70~μ\mathrm{s}$ bit-flip lifetime exceeds that of any control qubit in previous demonstrations, with an on-chip Archimedean spiral resonator several orders of magnitude smaller in mode volume than prior 3D cavities. We prepare finite-energy Gottesman-Kitaev-Preskill (GKP) states and stabilize them using measurement-free error correction with rapid fluxonium reset, extending the logical lifetime by a factor of $1.59 \pm 0.05$. These results provide the first demonstration of resonator control using a weakly coupled fluxonium and, with it, the first realization of standalone bosonic QEC in a fully planar superconducting circuit architecture.

quant-ph↗

arXiv2026

An All-van-der-Waals Qubit

Advances in solid-state physics, materials science, and device engineering have accelerated the development of superconducting qubits. Among emerging platforms, van der Waals (vdW) materials and their heterostructures are potentially attractive building blocks for quantum devices, yet their realization in qubit architectures remains largely underexplored. Here we report an all-vdW superconducting qubit based on a NbSe$_2$-hBN-NbSe$_2$ junction, in which a thin hBN layer simultaneously provides Josephson coupling and capacitive shunting between two NbSe$_2$ islands, forming a "merged-element" transmon. Temporal characterization using circuit quantum electrodynamics (cQED) techniques yields an average energy-relaxation time $T_{1,\mathrm{avg}} = 55 ~μs$, Hahn-echo coherence time $T_{2\mathrm{E},\mathrm{avg}} = 21 ~μs$, and Ramsey coherence time $T_{2\mathrm{R},\mathrm{avg}} = 1.9~μs$. The relatively low Ramsey time is primarily attributable to an enhanced sensitivity to charge noise consistent with the realized device parameters and not a fundamental limitation. These results show that lumped-element superconducting qubits based on vdW heterostructures can achieve coherence times comparable to those of conventional Al-AlO$_\mathrm{x}$-Al qubits, while offering a reduced device footprint and suppressed stray capacitive coupling.

quant-ph↗

arXiv2026

Characterization of Radiation-Induced Errors in Superconducting Qubits Protected with Various Gap-Engineering Strategies

Impacts from high-energy particles cause correlated errors in superconducting qubits by increasing the quasiparticle density in the vicinity of the Josephson junctions (JJs). Such errors are particularly harmful as they cannot be easily remedied via conventional error correcting codes. Recent experiments reduced correlated errors by making the difference in superconducting gap energy across the JJ larger than the qubit transition energy. In this work, we assess gap engineering near the JJ ($δΔ_{\mathrm{JJ}}$) and the capacitor/ground-plane ($δΔ_{\mathrm{M1}}$) by exposing arrays of transmon qubits to two sources of radiation. For $α$-particles from an $^{241}$Am source, we observe $T_1$ errors correlated in space and time, supporting a hypothesis that hadronic cosmic rays are a major contributor to the $10^{-10}$ error floor observed in Ref. 1. For electrons from a pulsed linear accelerator, we observe temporally correlated $T_1$ and $T_2$ errors, this measurement is insensitive to spatial correlations. We observe that the severity of correlated $T_1$ errors is reduced for qubit arrays with a greater degree of gap engineering at the JJ. For both $T_1$ and $T_2$ errors, the recovery time is hastened by an increased $δΔ_{\mathrm{M1}}$, which we attribute to the trapping of quasiparticles into the capacitor/ground-plane. We construct a model of quasiparticle dynamics that qualitatively agrees with our observations. This work reinforces the multifaceted influence of radiation on superconducting qubits and provides strategies for improving radiation resilience.

quant-ph↗

arXiv2026

Kinetic Inductance of Few-Layer NbSe$_2$ in the Two-Dimensional Limit

Van der Waals (vdW) superconductors remain superconducting down to the monolayer limit, enabling the exploration of emergent physical phenomena and functionality driven by reduced dimensionality. Here, we report the characterization of the kinetic inductance of atomically thin NbSe$_2$, a two-dimensional van der Waals superconductor, using superconducting coplanar waveguides and microwave measurement techniques familiar to circuit quantum electrodynamics (cQED). The kinetic inductance scales inversely with the number of NbSe$_2$ layers, reaching 1.2 nH/$\Box$ in the monolayer limit. Furthermore, the measured kinetic inductance exhibits a thickness-dependent crossover from clean- to dirty-limit behavior, with enhanced dirty-limit contributions emerging in the ultra-thin regime. These effects are likely driven by increased surface scattering, multi-band superconductivity, and geometric confinement. Additionally, the self-Kerr nonlinearity of the NbSe$_2$ films ranges from $K/2π$ = -0.008 to -14.7 Hz/photon, indicating its strong potential in applications requiring compact, nearly linear, high-inductance superconducting quantum devices and detectors. The fabrication and characterization techniques demonstrated here are extensible to the investigation of other two-dimensional superconductors.

cond-mat.supr-con↗

arXiv2025

Emergent Harmonics in Josephson Tunnel Junctions Due to Series Inductance

Josephson tunnel junctions are essential elements of superconducting quantum circuits. The operability of these circuits presumes a $2π$-periodic sinusoidal potential of a tunnel junction, but higher-order corrections to this Josephson potential, often referred to as "harmonics," cause deviations from the expected circuit behavior. Two potential sources for these harmonics are the intrinsic current-phase relationship of the Josephson junction and the inductance of the metallic traces connecting the junction to other circuit elements. Here, we introduce a method to distinguish the origin of the observed harmonics using nearly-symmetric superconducting quantum interference devices (SQUIDs). Spectroscopic measurements of level transitions in multiple devices reveal features that cannot be explained by a standard cosine potential, but are accurately reproduced when accounting for a second-harmonic contribution to the model. The observed scaling of the second harmonic with Josephson-junction size indicates that it is due almost entirely to the trace inductance. These results inform the design of next-generation superconducting circuits for quantum information processing and the investigation of the supercurrent diode effect.

quant-ph↗

arXiv2024

Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate

The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various spintronics functionalities. Taking advantage of good lattice matching, it is highly desired to epitaxially integrate promising Heuslers into III-V semiconductor-based devices. PtMnSb is one of the first half Heuslers predicted to be an above-room-temperature half-metal with large spin orbit coupling, however, its half-metallicity and potential as a spintronics material has remained elusive due to lack of high quality samples. Here we demonstrate epitaxial growth of single crystal PtMnSb(001) film on GaSb(001) substrates using molecular beam epitaxy. Direct observation of the band structure via angle-resolved photoemission spectroscopy and many-body perturbation theory within the quasiparticle self-consistent GW approximation (QPGW) reveal that PtMnSb hosts rather a near-halfmetallic state with both spin bands crossing the Fermi level and with high spin polarization over 90%. Temperature dependence of magnetization also shows an anomalous enhancement below 60 K, which can be associated with the development of such a near-half-metallic state at low temperatures. Epitaxial growth of high crystalline PtMnSb on a III-V paves the way for systematic clarification of its spin transport properties with fine-tuning of strain in heterostructure devices.

cond-mat.mtrl-sci↗

arXiv2024

Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications

Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below $300nm$ with an approximate total height of 3$μ$m are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional $Al/AlO_x/Al$ Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500k and qubit $T_1$ times greater than 25$μ$s. These results suggest that Si-Fins are a promising technology for applications that require low loss, compact, superconductor-based capacitors with minimal stray capacitance.

quant-ph↗

arXiv2023

Sn/InAs Josephson junctions on selective area grown nanowires with in-situ shadowed superconductor evaporation

Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in-situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we evaporated islands of superconductor tin on InAs SAG nanowires, by using in-situ shadowing with high aspect-ratio pre-fabricated SiOx dielectric walls. Our technique allows complete customization of each physical parameter of such hybrid nanostructures, while performing the nanowire and superconductor growths without breaking vacuum. Using this technique, we grew super(S)-normal(N)-super(S) (SNS), NS and SNSNS junctions. We performed cryogenic electron transport measurements revealing the presence of gate and field tunable supercurrents in shadow junctions fabricated on in-plane SAG nanowires. We further measured the superconducting gap and critical fields in the hybrid nanostructures and the crossover from 2e to 1e periodicity in the SNSNS junctions, as a proof of the usability of these hybrid nanostructures.

cond-mat.mes-hall↗

arXiv2022

Towards merged-element transmons using silicon fins: the FinMET

A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers.

quant-ph↗

arXiv2022

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

cond-mat.mtrl-sci↗

arXiv2020

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.

physics.app-ph↗

arXiv2019

Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.

cond-mat.mtrl-sci↗