arXiv subjects

Arash A. Mostofi

Publications and source records attributed to Arash A. Mostofi.

At least 55 records · Page 3Linked to original sources

arXiv2019

Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at $Γ$ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.

cond-mat.mes-hall↗

arXiv2019

Twist-angle dependence of electron correlations in moiré graphene bilayers

Motivated by the recent observation of correlated insulator states and unconventional superconductivity in twisted bilayer graphene, we study the dependence of electron correlations on the twist angle and reveal the existence of strong correlations over a narrow range of twist-angles near the magic angle. Specifically, we determine the on-site and extended Hubbard parameters of the low-energy Wannier states using an atomistic quantum-mechanical approach. The ratio of the on-site Hubbard parameter and the width of the flat bands, which is an indicator of the strength of electron correlations, depends sensitively on the screening by the semiconducting substrate and the metallic gates. Including the effect of long-ranged Coulomb interactions significantly reduces electron correlations and explains the experimentally observed sensitivity of strong correlation phenomena on twist angle.

cond-mat.str-el↗

arXiv2019

Wannier90 as a community code: new features and applications

Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials.

cond-mat.mtrl-sci↗

arXiv2018

Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.

cond-mat.mes-hall↗

arXiv2018

A Corkscrew Model for Highly Coupled Anisotropic Compliance in Ruddlesden-Popper Oxides with Frozen Octahedral Rotations

A "corkscrew" mechanism, that couples changes in the in-plane rotation angle to strains along the layering axis, has been proposed previously to explain increased compliance in certain Ruddlesden-Popper phases that facilitates uniaxial negative thermal expansion over a wide temperature range. Following the procedure developed to study many simple, auxetic geometries, in the present study we derive the elastic compliances predicted by this corkscrew mechanism assuming that the four shortest metal-anion bonds remain stiff and changes in bond angle are modelled by a harmonic angle potential. We subsequently analyse the limitations of this model and show that it may be extended to An+1BnO3n+1 Ruddlesden-Popper oxide phases of general layer thickness n.

cond-mat.mtrl-sci↗

arXiv2018

Bound States of Charged Adatoms on MoS2: Screening and Multivalley Effects

Adsorbate engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide materials. Here, we study shallow bound states induced by charged adatoms on MoS$_2$ using large-scale tight-binding simulations with screened adatom potentials obtained from ab initio calculations. The interplay of unconventional screening in two-dimensional systems and multivalley effects in the transition-metal dichalcogenide (TMDC) band structure results in a rich diversity of bound impurity states. We present results for impurity state wavefunctions and energies, as well as for the local density of states in the vicinity of the adatom which can be measured using scanning tunnelling spectroscopy. We find that the presence of several distinct valleys in the MoS$_2$ band structure gives rise to crossovers of impurity states at critical charge strengths, altering the orbital character of the most strongly bound state. We compare our results to simpler methods, such as the 2D hydrogen atom and effective mass theory, and we discuss limitations of these approaches.

cond-mat.mes-hall↗

arXiv2017

Spatially resolving density-dependent screening around a single charged atom in graphene

Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated graphene device configuration has allowed us to directly visualize how the screening length for this system can be tuned with carrier density. Our results provide insight into electron-impurity and electron-electron interactions in a relativistic setting with important consequences for other graphene-based electronic devices.

cond-mat.mes-hall↗

arXiv2017

First-principles multiscale modelling of charged adsorbates on doped graphene

Adsorbed atoms and molecules play an important role in controlling and tuning the functional properties of two-dimensional (2D) materials. Understanding and predicting this process from theory is challenging because of the need to capture the complex interplay between the local chemistry and the long-range screening response. To address this problem, we present a first-principles multiscale approach that combines linear-scaling density-functional theory, continuum screening theory and large-scale tight-binding simulations into a seamless parameter-free theory of adsorbates on 2D materials. We apply this method to investigate the electronic structure of doped graphene with a single calcium (Ca) adatom and find that the Ca atom acts as a Coulomb impurity which modifies the graphene local density of states (LDOS) within a distance of several nanometres in its vicinity. We also observe an important doping dependence of the graphene LDOS near the Ca atom, which gives insights into electronic screening in graphene. Our multiscale framework opens up the possibility of investigating complex mesoscale adsorbate configurations on 2D materials relevant to real devices.

cond-mat.mes-hall↗

arXiv2014

Negative-U properties for substitutional Au in Si

The isolated substitutional gold impurity in bulk silicon is studied in detail using electronic structure calculations based on density-functional theory. The defect system is found to be a non-spin-polarized negative-U centre, thus providing a simple solution to the long-standing debate over the electron paramagnetic resonance signal for gold in silicon. There is an excellent agreement (within 0.03 eV) between the well-established experimental donor and acceptor levels and the predicted stable charge state transition levels, allowing for the unambiguous assignment of the two experimental levels to the (1+/1-) and (1-/3-) transitions, respectively, in contrast to previously held assumptions about the system.

cond-mat.mtrl-sci↗

arXiv2014

Improving the conductance of carbon nanotube networks through resonant momentum exchange

We present a mechanism to improve the conductivity of carbon nanotube (CNT) networks by improving the conductance between CNTs of different chirality. We argue generally that a weak perturbation can greatly improve the inter-tube conductance by allowing momentum-conserving tunnelling. The mechanism is verified with a tight-binding model, allowing an investigation of its impact for a network containing a range of chiralities. We discuss practical implementations, and conclude that it may be effected by weak physical interactions, and therefore does not require chemical bonding to the CNTs.

cond-mat.mes-hall↗

arXiv2013

A first principles study of As doping at a disordered Si--SiO$_2$ interface

Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles density-functional theory and a continuous random network Monte Carlo method, we investigate electrically active arsenic donors at the interface between silicon and its oxide. Using a realistic model of the disordered interface, we find that a small percentage (on the order of ~10%) of the atomic sites in the first few monolayers on the silicon side of the interface are energetically favourable for segregation, and that this is controlled by the local bonding and local strain of the defect centre. We also find that there is a long-range quantum confinement effect due to the interface, which results in an energy barrier for dopant segregation, but that this barrier is small in comparison to the effect of the local environment. Finally, we consider the extent to which the energetics of segregation can be controlled by the application of strain to the interface.

cond-mat.mtrl-sci↗

arXiv2012

Calculating dispersion interactions using maximally-localized Wannier functions

We investigate a recently developed approach [P. L. Silvestrelli, Phys. Rev. Lett. 100, 053002 (2008); J. Phys. Chem. A 113, 5224 (2009)] that uses maximally localized Wannier functions to evaluate the van der Waals contribution to the total energy of a system calculated with density-functional theory. We test it on a set of atomic and molecular dimers of increasing complexity (argon, methane, ethene, benzene, phthalocyanine, and copper phthalocyanine) and demonstrate that the method, as originally proposed, has a number of shortcomings that hamper its predictive power. In order to overcome these problems, we have developed and implemented a number of improvements to the method and show that these modifications give rise to calculated binding energies and equilibrium geometries that are in closer agreement to results of quantum-chemical coupled-cluster calculations.

cond-mat.mtrl-sci↗

arXiv2012

Maximally localized Wannier functions: Theory and applications

The electronic ground state of a periodic system is usually described in terms of extended Bloch orbitals, but an alternative representation in terms of localized "Wannier functions" was introduced by Gregory Wannier in 1937. The connection between the Bloch and Wannier representations is realized by families of transformations in a continuous space of unitary matrices, carrying a large degree of arbitrariness. Since 1997, methods have been developed that allow one to iteratively transform the extended Bloch orbitals of a first-principles calculation into a unique set of maximally localized Wannier functions, accomplishing the solid-state equivalent of constructing localized molecular orbitals, or "Boys orbitals" as previously known from the chemistry literature. These developments are reviewed here, and a survey of the applications of these methods is presented. This latter includes a description of their use in analyzing the nature of chemical bonding, or as a local probe of phenomena related to electric polarization and orbital magnetization. Wannier interpolation schemes are also reviewed, by which quantities computed on a coarse reciprocal-space mesh can be used to interpolate onto much finer meshes at low cost, and applications in which Wannier functions are used as efficient basis functions are discussed. Finally the construction and use of Wannier functions outside the context of electronic-structure theory is presented, for cases that include phonon excitations, photonic crystals, and cold-atom optical lattices.

cond-mat.mtrl-sci↗

arXiv2012

Generalized Wannier functions: a comparison of molecular electric dipole polarizabilities

Localized Wannier functions provide an efficient and intuitive means by which to compute dielectric properties from first principles. They are most commonly constructed in a post-processing step, following total-energy minimization. Nonorthogonal generalized Wannier functions (NGWFs) [Skylaris et al., Phys. Rev. B 66, 035119 11 (2002); Skylaris et al., J. Chem. Phys. 122, 084119 (2005)] may also be optimized in situ, in the process of solving for the ground-state density. We explore the relationship between NGWFs and orthonormal, maximally localized Wannier functions (MLWFs) [Marzari and Vanderbilt, Phys. Rev. B 56, 12847 (1997); Souza, Marzari, and Vanderbilt, ibid. 65, 035109 (2001)], demonstrating that NGWFs may be used to compute electric dipole polarizabilities efficiently, with no necessity for post-processing optimization, and with an accuracy comparable to MLWFs.

cond-mat.mtrl-sci↗

arXiv2012

Linear-scaling DFT+U with full local orbital optimization

We present an approach to the DFT+U method (Density Functional Theory + Hubbard model) within which the computational effort for calculation of ground state energies and forces scales linearly with system size. We employ a formulation of the Hubbard model using nonorthogonal projector functions to define the localized subspaces, and apply it to a local-orbital DFT method including in situ orbital optimization. The resulting approach thus combines linear-scaling and systematic variational convergence. We demonstrate the scaling of the method by applying it to nickel oxide nano-clusters with sizes exceeding 7,000 atoms.

cond-mat.str-el↗

arXiv2011

System-size convergence of point defect properties: The case of the silicon vacancy

We present a comprehensive study of the vacancy in bulk silicon in all its charge states from 2+ to 2-, using a supercell approach within plane-wave density-functional theory, and systematically quantify the various contributions to the well-known finite size errors associated with calculating formation energies and stable charge state transition levels of isolated defects with periodic boundary conditions. Furthermore, we find that transition levels converge faster with respect to supercell size when only the Gamma-point is sampled in the Brillouin zone, as opposed to a dense k-point sampling. This arises from the fact that defect level at the Gamma-point quickly converges to a fixed value which correctly describes the bonding at the defect centre. Our calculated transition levels with 1000-atom supercells and Gamma-point only sampling are in good agreement with available experimental results. We also demonstrate two simple and accurate approaches for calculating the valence band offsets that are required for computing formation energies of charged defects, one based on a potential averaging scheme and the other using maximally-localized Wannier functions (MLWFs). Finally, we show that MLWFs provide a clear description of the nature of the electronic bonding at the defect centre that verifies the canonical Watkins model.

cond-mat.mtrl-sci↗

arXiv2011

Minimal parameter implicit solvent model for ab initio electronic structure calculations

We present an implicit solvent model for ab initio electronic structure calculations which is fully self-consistent and is based on direct solution of the nonhomogeneous Poisson equation. The solute cavity is naturally defined in terms of an isosurface of the electronic density according to the formula of Fattebert and Gygi (J. Comp. Chem. 23, 6 (2002)). While this model depends on only two parameters, we demonstrate that by using appropriate boundary conditions and dispersion-repulsion contributions, solvation energies obtained for an extensive test set including neutral and charged molecules show dramatic improvement compared to existing models. Our approach is implemented in, but not restricted to, a linear-scaling density functional theory (DFT) framework, opening the path for self-consistent implicit solvent DFT calculations on systems of unprecedented size, which we demonstrate with calculations on a 2615-atom protein-ligand complex.

physics.comp-ph↗

arXiv2011

Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures

We calculate the thermoelectric figure of merit, zT=S^2GT/(κ_l+κ_e), for p-type Si nanowires with axial Ge heterostructures using a combination of first-principles density-functional theory, interatomic potentials, and Landauer-Buttiker transport theory. We consider nanowires with up to 8400 atoms and twelve Ge axial heterostructures along their length. We find that introducing heterostructures always reduces S^2G, and that our calculated increases in zT are predominantly driven by associated decreases in κ_l. Of the systems considered, <111> nanowires with a regular distribution of Ge heterostructures have the highest figure-of-merit: zT=3, an order of magnitude larger than the equivalent pristine nanowire. Even in the presence of realistic structural disorder, in the form of small variations in length of the heterostructures, zT remains several times larger than that of the pristine case, suggesting that axial heterostructuring is a promising route to high-zT thermoelectric nanowires.

cond-mat.mtrl-sci↗