arXiv subjects

Arend M. van der Zande

Publications and source records attributed to Arend M. van der Zande.

13 recordsLinked to original sources

arXiv2026

Atomic and Electronic Structure of Strongly Charged Domain Walls in van der Waals α-In$_2$Se$_3$

Here, we use atomic resolution scanning transmission electron microscopy (STEM) and first principles calculations to study the atomic and electronic structure of strongly charged domain walls in $α$-In$_2$Se$_3$. STEM imaging and density functional theory (DFT) show that head-to-head (HH) domain walls contain a layer of nonpolar $β$-In$_2$Se$_3$, whereas tail-to-tail (TT) domain walls are atomically abrupt. We apply 4D STEM and multislice electron ptychography to map ferroelectric domains in 2D and 3D, showing that nearly $180^\circ$ domain walls exhibit complex, curved 3D structures that differ from ideal $180^\circ$ structures. Band structure calculations show localized conducting states within a $\sim$ 1 nm thick layer at both HH and TT domain walls, such as a midgap state at the $β$ layer of the HH domain wall. These properties make strongly charged domain walls in $α$-In$_2$Se$_3$ excellent candidates for realizing 2D electron or hole gases and domain wall engineering in van der Waals ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2025

Enhancing Hole Mobility in Monolayer $WSe_{2}$ p-FETs via Process-Induced Compression

Understanding the interactions between strain, interfacial mechanics, and electrical performance is critical for designing beyond silicon electronics based on hetero-integrated 2D materials. Through combined experiment and simulation, we demonstrated and analyzed the enhancement of hole mobility in p-type monolayer $WSe_{2}$ field effect transistors (FETs) under biaxial compression. We tracked FET performance versus strain by incrementing compressive strain to $WSe_{2}$ channels via sequential AlOx deposition and performing intermediate photoluminescence and transport measurements. The hole mobility factor increased at a rate of 340 $\pm$ 95 %/%$ε$, and the on-current factor increased at a rate of 460 $\pm$ 340 %/%$ε$. Simulation revealed that the enhancement under compression arises primarily from a reduction in inter-valley scattering between the $Γ$--K valence bands, and the rate is robust against variations in carrier density, impurity density, or dielectric environment. These findings show that compressive strain is a powerful technique for enhancing performance in 2D p-FETs and that it is multiplicative with defect and doping engineering.

cond-mat.mtrl-sci↗

arXiv2025

Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs

Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging class of 2D semiconductors, we show that mobility modulation under biaxial strain is dictated by changes in inter-valley scattering rather than effective mass renormalization as in bulk silicon. Using a multiscale full-band transport framework that incorporates both intrinsic phonon, extrinsic impurity, and dielectric scattering, we find that tensile strain enhances n-type mobility through K-Q valley separation, while compressive strain improves p-type mobility via Γ-K decoupling. The tuning rates calculated from our full-band model far exceed those achieved by strain engineering in silicon. Both relaxed and strain-modulated carrier mobilities align quantitatively with experimentally verified measurements and are valid across a wide range of practical FET configurations. The enhancement remains robust across variations in temperature, carrier density, impurity level, and dielectric environment. Our results highlight the pivotal role of strain in improving the reliability and performance of 2D TMD-based electronics.

physics.app-ph↗

arXiv2025

Strain-induced Moiré Reconstruction and Memorization in Two-Dimensional Materials without Twist

Two-dimensional (2D) materials with a twist between layers exhibit a moiré interference pattern with larger periodicity than any of the constituent layer unit cells. In these systems, a wealth of exotic phases appear that result from moiré-dependent many-body electron correlation effects or non-trivial band topology. One problem with using twist to generate moiré interference has been the difficulty in creating high-quality, uniform, and repeatable samples due to fabrication through mechanical stacking with viscoelastic stamps. Here we show, a new method to generate moiré interference through the controlled application of layer-by-layer strain (heterostrain) on non-twisted 2D materials, where moiré interference results from strain-induced lattice mismatch without twisting or stacking. Heterostrain generation is achieved by depositing stressed thin films onto 2D materials to apply large strains to the top layers while leaving layers further down less strained. We achieve deterministic control of moiré periodicity and symmetry in non-twisted 2D multilayers and bilayers, with 97% yield, through varying stressor film force (film thickness X film stress) and geometry. Moiré reconstruction effects are memorized after the removal of the stressor layers. Control over the strain degree-of-freedom opens the door to a completely unexplored set of unrealized tunable moiré geometric symmetries, which may now be achieved in a high-yield and user-skill independent process taking only hours. This technique solves a long-standing throughput bottleneck in new moiré quantum materials discovery and opens the door to industrially-compatible manufacturing for 2D moiré-based electronic or optical devices.

cond-mat.mtrl-sci↗

arXiv2025

Field-effect transistors based on charged domain walls in van der Waals ferroelectric α-In$_2$Se$_3$

Charged domain walls (CDW) in ferroelectrics are emerging as functional interfaces with potential applications in nonvolatile memory, logic, and neuromorphic computing. However, CDWs in conventional ferroelectrics are vertical, buried, or electrically inaccessible interfaces that prevent their use in functional devices. Here, we overcome these challenges by stacking two opposite polar domains of van der Waals ferroelectric $α$-In$_2$Se$_3$ to generate artificial head-head (H-H) CDWs and use edge contact to fabricate charged domain wall-based field-effect transistors (CDW-FET). We relate the atomic structure to the temperature-dependent electrical and magneto-transport of the CDW-FET. CDW-FETs exhibit a metal-to-insulator transition with decreasing temperature and enhanced conductance and field-effect mobility compared to single domain $α$-In$_2$Se$_3$. We identify two regimes of transport: variable range hopping due to disorder in the band edge below 70 K and thermally activated interfacial trap-assisted transport above 70 K. The CDW-FETs show room-temperature resistance down to 3.1 k$Ω$ which is 2-9 orders of magnitude smaller than the single CDW in thin-film ferroelectrics. These results resolve longstanding challenges with high CDW resistance and their device integration, opening opportunities for gigahertz memory and neuromorphic computing.

cond-mat.mtrl-sci↗

arXiv2022

Ultra-tuning of nonlinear drumhead MEMS resonators by electro-thermoelastic buckling

Nonlinear micro-electro-mechanical systems (MEMS) resonators open new opportunities in sensing and signal manipulation compared to their linear counterparts by enabling frequency tuning and increased bandwidth. Here, we design, fabricate and study drumhead resonators exhibiting strongly nonlinear dynamics and develop a reduced order model (ROM) to capture their response accurately. The resonators undergo electrostatically-mediated thermoelastic buckling which tunes their natural frequency from 4.7 to 11.3 MHz, a factor of 2.4x tunability. Moreover, the imposed buckling switches the nonlinearity of the resonators between purely stiffening, purely softening, and even softening-to-stiffening. Accessing these exotic dynamics requires precise control of the temperature and the DC electrostatic forces near the resonator's critical-buckling point. To explain the observed tunability, we develop a one-dimensional physics-based ROM that predicts the linear and nonlinear response of the fundamental bending mode of these drumhead resonators. The ROM captures the dynamic effects of the internal stresses resulting from three sources: The residual stresses from the fabrication process, the mismatch in thermal expansion between the constituent layers, and lastly, the applied electrostatic forces. The ROM replicates the observed tunability of linear (within 5.5% error) and nonlinear responses even near the states of critical buckling. These remarkable nonlinear and large tunability of the natural frequency are valuable features for on-chip acoustic devices in broad applications such as signal manipulation, filtering, and MEMS waveguides.

physics.app-ph↗

arXiv2016

Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2

We report a determination of the complex in-plane dielectric function of monolayers of four transition metal dichalcogenides: MoS2, MoSe2, WS2 and WSe2, for photon energies from 1.5 - 3 eV. The results were obtained from reflection spectra using a Kramers-Kronig constrained variational analysis. From the dielectric functions, we obtain the absolute absorbance of the monolayers. We also provide a comparison of the dielectric function for the monolayers with the corresponding bulk materials.

cond-mat.mtrl-sci↗

arXiv2014

Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2

We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley degeneracy. The magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands. The relative intensity of neutral and charged exciton emission is modified by the magnetic field, reflecting the creation of field-induced valley polarization. At high doping levels, the Zeeman shift of the charged exciton increases to $\mp$ 0.18 meV/T. This enhancement is attributed to many-body effects on the binding energy of the charged excitons.

cond-mat.mes-hall↗

arXiv2014

Atomically thin p-n junctions with van der Waals heterointerfaces

Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes defined by the spatial extent of this region. With the advent of atomically thin van der Waals (vdW) materials and their heterostructures, we are now able to realize a p-n junction at the ultimate quantum limit. In particular, vdW junctions composed of p- and n-type semiconductors each just one unit cell thick are predicted to exhibit completely different charge transport characteristics than bulk junctions. Here we report the electronic and optoelectronic characterization of atomically thin p-n heterojunctions fabricated using vdW assembly of transition metal dichalcogenides (TMDCs). Across the p-n interface, we observe gate-tuneable diode-like current rectification and photovoltaic response. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances collection of the photoexcited carriers. The atomically scaled vdW p-n heterostructures presented here constitute the ultimate quantum limit for functional electronic and optoelectronic components.

cond-mat.mes-hall↗

arXiv2013

Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the microstructure of this material. Here we have refined chemical vapor deposition synthesis to grow highly crystalline islands of monolayer molybdenum disulfide up to 120 um in size with optical and electrical properties comparable or superior to exfoliated samples. Using transmission electron microscopy, we correlate lattice orientation, edge morphology, and crystallinity with island shape to demonstrate that triangular islands are single crystals. The crystals merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings. Density functional theory reveals localized mid-gap states arising from these 8-4 defects. We find that mirror boundaries cause strong photoluminescence quenching while tilt boundaries cause strong enhancement. In contrast, the boundaries only slightly increase the measured in-plane electrical conductivity.

cond-mat.mtrl-sci↗

arXiv2011

Entropic Spectral Broadening in Carbon Nanotube Resonators

We simulated the behavior of suspended carbon-nanotube (CNT) resonators over a broad range of temperatures to address the unexplained spectral broadening and frequency shifts seen in experiments. We find that thermal fluctuations induce strong coupling between resonance modes. This effect leads to spectral fluctuations which readily account for the experimentally observed quality factors $Q\sim100$ at $300\ K$. Using a mean field approach to describe entropic fluctuations we analytically calculate $Q$ and frequency shifts in tensioned and buckled CNTs and find excellent agreement with simulations.

cond-mat.mes-hall↗

arXiv2010

Imaging Grains and Grain Boundaries in Single-Layer Graphene: An Atomic Patchwork Quilt

The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in 2D materials, where even a line defect can divide and disrupt a crystal. These issues take on practical significance in graphene, a hexagonal two-dimensional crystal of carbon atoms; Single-atom-thick graphene sheets can now be produced by chemical vapor deposition on up to meter scales, making their polycrystallinity almost unavoidable. Theoretically, graphene grain boundaries are predicted to have distinct electronic, magnetic, chemical, and mechanical properties which strongly depend on their atomic arrangement. Yet, because of the five-order-of-magnitude size difference between grains and the atoms at grain boundaries, few experiments have fully explored the graphene grain structure. Here, we use a combination of old and new transmission electron microscope techniques to bridge these length scales. Using atomic-resolution imaging, we determine the location and identity of every atom at a grain boundary and find that different grains stitch together predominantly via pentagon-heptagon pairs. We then use diffraction-filtered imaging to rapidly map the location, orientation, and shape of several hundred grains and boundaries, where only a handful have been previously reported. The resulting images reveal an unexpectedly small and intricate patchwork of grains connected by tilt boundaries. By correlating grain imaging with scanned probe measurements, we show that these grain boundaries dramatically weaken the mechanical strength of graphene membranes, but do not measurably alter their electrical properties. These techniques open a new window for studies on the structure, properties, and control of grains and grain boundaries in graphene and other 2D materials.

cond-mat.mtrl-sci↗

arXiv2008

Impermeable Atomic Membranes from Graphene Sheets

We demonstrate that a monolayer graphene membrane is impermeable to standard gases including helium. By applying a pressure difference across the membrane, we measure both the elastic constants and the mass of a single layer of graphene. This pressurized graphene membrane is the world's thinnest balloon and provides a unique separation barrier between 2 distinct regions that is only one atom thick.

cond-mat.mtrl-sci↗