arXiv subjects

Ariane Giesriegl

Publications and source records attributed to Ariane Giesriegl.

4 recordsLinked to original sources

arXiv2026

Reduction of intrinsic losses in nanomechanical silicon nitride resonators through thermal treatment in ultrahigh vacuum

Since the discovery of dissipation dilution, silicon nitride (SiN) nanomechanical resonators have set the benchmark for ultracoherent mechanical systems, with geometry and strain engineering driving remarkable gains in the $f \cdot Q$ product. Surface loss, however, has remained the dominant and largely unaddressed dissipation channel. Here, we demonstrate a geometry-independent approach that directly targets surface loss: thermal treatment in ultrahigh vacuum. Treatment at 1000$^{\circ}$C enhances the intrinsic quality factor of dissipation-diluted SiN membrane resonators by up to a factor of 20, reduces the surface loss eightfold, and simultaneously increases the tensile stress. Photothermal infrared spectroscopy and $\textit{in situ}$ X-ray photoelectron spectroscopy trace the enhancement to thermally activated silanol condensation - the conversion of surface hydroxyl terminations into siloxane bridges - and the reversibility of both quality factor and stress under controlled humidity confirms the surface-chemical origin. These results establish surface chemistry as a tunable parameter for next-generation ultracoherent nanomechanical resonators.

physics.app-ph↗

arXiv2026

HF Etching and Silanization: Evidence for the Role of Surface Hydroxyl Groups in Silicon Nitride Resonator Loss

Silicon nitride $SiN_x$ nanomechanical resonators are central to sensing, quantum technologies, and fundamental physics experiments due to their exceptional mechanical quality factors (Q). However, as resonator thickness approaches the nano-scale, surface-related dissipation limits performance. Here, we investigate the role of surface chemistry in low-stress Si-rich SiNx membranes through a combination of hydrofluoric acid (HF) etching and trimethylchlorosilane (TMCS) silanization, correlated with surface characterization and mechanical measurements. Preliminary analysis by TEM-EELS, XPS, RBS/ERDA, and XRR reveals a native oxide surface layer (1-2 nm). Surface modification by HF and TMCS was subsequently evaluated using XPS, photothermal FTIR, contact-angle measurements, and intrinsic quality factor ($Q_{int}$) characterization. While HF etching effectively removes the native oxide and TMCS introduces hydrophobic $Si-(CH_3)_3$ termination, neither oxide thickness nor surface energy correlates with mechanical dissipation. TMCS treatments produce the largest enhancements, increasing $Q_{int}$ by up to 50%, whereas HF etching alone yields lower gains of 20-25%. These findings suggest surface hydroxyl groups as a key contributor to energy loss in $SiN_x$ resonators and demonstrate that chemical functionalization can substantially suppress surface dissipation.

cond-mat.mtrl-sci↗

arXiv2026

Determination of the intrinsic mechanical quality factor in high-stress silicon nitride resonators

Recent advances in silicon nitride nanomechanical resonators have pushed mechanical quality factors to ultra-high values by combining stress-induced dissipation dilution with mode-shape engineering. Neither mechanism alters the intrinsic quality factor $Q_{\mathrm{intr}}$. Targeting the intrinsic loss itself therefore remains an untapped route to even higher $Q$. Doing so first requires reliable quantification of $Q_{\mathrm{intr}}$, which has proven challenging. Here we present a robust methodology that quantifies $Q_{\mathrm{intr}}$ by combining automated mode identification with systematic ringdown measurements over a large number of mechanical modes. Applied to high-stress silicon nitride membranes, it reveals a systematic dependence of $Q_{\mathrm{intr}}$ on thickness that cannot be described using established models, particularly in the ultra-thin limit. We account for this trend with a phenomenological model that incorporates a thickness-dependent loss channel. Together, our method and model open a route toward a microscopic understanding of intrinsic dissipation and toward directly mitigating its loss channels.

physics.app-ph↗

arXiv2026

Picogram-Level Nanoplastic Analysis with Nanoelectromechanical System Fourier Transform Infrared Spectroscopy: NEMS-FTIR

We present a photothermal infrared spectroscopy-based approach for the chemical characterization and quantification of nanoplastics. By combining the high sensitivity of nanoelectromechanical systems (NEMS) with the wide spectral range and ubiquity of commercially available Fourier transform infrared (FTIR) spectrometers, NEMS-FTIR offers a time-efficient and cryogen-free option for the rapid, routine analysis of nanoplastics in aqueous samples. Polypropylene, polystyrene, and polyvinyl chloride nanoplastics with nominal diameters ranging from 54 to 262 nm were analyzed by NEMS-FTIR with limits of detection ranging from 101 pg to 353 pg, one order of magnitude lower than values reported for pyrolysis-gas chromatography-mass spectrometry of nanoplastics. The absorptance measured by NEMS-FTIR could be further converted to absolute sample mass using the attenuation coefficient, as demonstrated for polystyrene. Thanks to the wide spectral range of NEMS-FTIR, nanoplastic particles from different polymers could be readily identified, even when present in a mixture. The potential of NEMS-FTIR for the analysis of real samples was demonstrated by identifying the presence of nanoplastics released in water during tea brewing. Polyamide leachates in the form of fragments and smaller oligomers could be identified in the brewing water without sample pre-concentration, even in the presence of an organic matrix. Accelerated aging of the nylon teabags under elevated temperature and UV radiation showed further release of polyamide over time.

physics.ins-det↗