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Arindom Das

Publications and source records attributed to Arindom Das.

4 recordsLinked to original sources

Anomalous Hall Effect in Silicon-Compatible Altermagnetic alpha-MnTe Thin Films

Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of alpha-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net magnetization, the films exhibit a pronounced hysteretic Hall response, providing clear evidence of finite Berry curvature generated by symmetry breaking in the thin-film geometry. High resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures.

cond-mat.mtrl-sci

Effect of symmetry breaking on altermagnetism in CrSb and Formation of fragmented nodal curves

Phenomena concerning altermagnets have opened up a window for unconventional analysis of the momentum space spin polarization (MSSP) of antiferromagnetic materials. Taking the example of one of the widely investigated altermagnets, CrSb, we explore the underlying mechanisms leading to the formation or breaking of altermagnetism. With the aid of DFT calculation and symmetry analysis, we study the behavior of MSSP in the altermagnetic bands of pristine CrSb, along with a few model structures designed from the pristine one by hypothetical vacancy engineering and interstitial doping. We show that the six-fold rotational symmetry of the pristine CrSb can be reduced to a two-fold rotational symmetry via vacancy and doping engineering. We discover the formation of fragmented nodal curves (FNCs) across the Brillouin zone when in an altermagnetic material when the symmetry is restricted to two-fold rotation. Unlike the typical nodal planes and axes, the location of the FNCs in the momentum space is found to be band-specific. The formation of FNCs is further validated by introducing uniaxial strain to CrSb and by examining the band structure of RbMnPO$_4$, as they both exhibit a two-fold rotational symmetry responsible for altermagnetism. We observe that, unlike the pristine case, these FNCs have the potential to manifest anomalous Hall conductivities (AHC), while the N\'eel vector orients along both in-plane and out-of-plane directions. This flexibility of the AHC will pave the way for the application of altermagnets in the futuristic quantum devices.

cond-mat.mtrl-sci

Unlocking Doping Effects on Altermagnetism in MnTe: Emergence of Quasi-altermagnetism

Governed by specific symmetries, altermagnetism is an emerging field in condensed matter physics, characterized by unique spin-splitting of the bands in the momentum space co-existing with the compensated magnetization as in antiferromagnets. As crystals can have tailored and unintended defects, it is important to gain insights on how altermagnets are affected by the defects-driven symmetry-breaking which, in turn, can build promising perspectives on potential applications. In this study, considering the widely investigated MnTe as a prototype altermagnet, defects are introduced through substitutional doping to create a large configuration space of spin space groups. With the aid of density functional theory calculations, symmetry analysis, and model studies in this configuration space, we demonstrate the generic presence of spin-split of the antiferromagnetic bands in the momentum space. This is indicative of a wider class of quasi-altermagnetic materials, augmenting the set of ideal altermagnetic systems. Furthermore, we show that while pristine MnTe does not show anomalous Hall conductivity (AHC) with out-of-plane magnetization, suitable doping can be carried out to obtain finite and varied AHC. Our predictions of quasi-altermagnetism and doping-driven tailored AHC have the potential to open up as-yet-unexplored directions in this developing field.

cond-mat.mtrl-sci

Deterministic role of chemical bonding in the formation of altermagnetism: Reflection from correlated electron system NiS

Altermagnetism, a new collinear magnetic state, has gained significant attention in the last few years, and the underlying mechanisms driving this quantum phase are still evolving. Going beyond the group theoretical analyses, which focus on providing a binary description of the presence or absence of the altermagnetic state, in this work, we explore the role of crystal chemical bonding. As the latter successfully integrates the crystal and orbital symmetries and is tunable, it provides a quantitative and realistic mechanism to explain the formation of altermagnetism. From the first principles calculations and tight-binding models within the framework of the linear combination of atomic orbitals on NiS, we establish a set of selection rules for the formation of altermagnetism in the NiAs prototype compounds (e.g. CrSb, MnTe, etc.). Broadly, if single orbitals from Ni and S sites are involved in the bonding, the second neighbor interaction between the nonmagnetic atoms is a must to modulate the intra-sublattice interactions differently for the opposite spin sublattices so that the antiferromagnetic sublattice band degeneracy is lifted and momentum-dependent altermagnetic spin split (AMSS) appears. However, when multiple orbitals are involved from the Ni and S sites in the chemical bonding, altermagnetism is naturally present. Together, they amplify the AMSS. Further, we propose twelve antinodal regions in the NiAs type hexagonal crystals, where AMSS split is maximum. Specific to NiS, AMSS increases with correlation, and for the edge valence and conduction bands, it can go beyond 1eV. The present study opens up new pathways to design chemical bonding driven selection rules in addition to the existing crystal symmetry criteria to tailor tunable altermagnetism.

cond-mat.mtrl-sci