arXiv subjects

Arjyama Bordoloi

Publications and source records attributed to Arjyama Bordoloi.

9 recordsLinked to original sources

arXiv2026

Engineering Topology by Design in Two-dimensional Materials

Two-dimensional topological insulators (2D TIs) have emerged as a cornerstone of next-generation spintronic technologies due to their robust, dissipationless edge states protected by time-reversal symmetry. Initial realizations of 2D TIs have primarily focused on materials with strong intrinsic spin-orbit coupling capable of driving band inversion, an approach that significantly constrains the accessible materials landscape. More recently, a paradigm shift has occurred toward engineering topological phases in van der Waals (vdW) heterostructures, where nontrivial band topology can arise from interfacial coupling rather than relying solely on intrinsic material properties. This framework provides an exceptionally versatile platform with multiple tunable degrees of freedom, including stacking configuration, twist angle, and chemical functionalization, allowing systematic manipulation of the band topology. Furthermore, external stimuli, such as electric fields, strain, and light-matter coupling, enable dynamic and reversible control of the topological character. The combined use of vdW interface engineering and external modulation allows the realization of 2D TI phases even in otherwise topologically trivial systems, substantially expanding the accessible materials landscape. This Research Update reviews key milestones in the development of vdW-engineered 2D topological quantum materials, critically assesses outstanding theoretical and experimental challenges, and outlines promising directions for future breakthroughs.

cond-mat.mtrl-sci↗

arXiv2026

Probing the Nature of Interstitial Anionic Electrons in 2D Electride Ca$_2$N via Landau-Level Spectroscopy

We investigate the magnetic-field response of interstitial anionic electrons (IAEs) in two-dimensional electrides, using monolayer Ca$_2$N as a prototypical system. By computing the Landau-level (LL) spectrum of the electride bands forming the Fermi surface, we find a linear LL evolution with magnetic field that closely resembles the behavior of a nearly-free 2D electron gas (2DEG). The extracted cyclotron effective mass and Landé g-factor deviate moderately from their free-electron values, indicating that the IAEs retain a remarkably free-electron-like character. Furthermore, the energy dispersion of the electride bands remains insensitive to the choice of exchange-correlation functional (LDA vs.~PBEsol), indicating that local exchange and correlation effects have minimal influence on the IAEs. Overall, our findings provide fundamental insight into the quantum nature of electrides and open new avenues for exploring magnetic confinement, correlation effects, and emergent quantum phenomena in low-dimensional interstitial electronic systems.

cond-mat.mtrl-sci↗

arXiv2026

Dominant in-plane anomalous Hall effect in a monoclinic room-temperature ferromagnet

Ferromagnetic metals are characterized by enhanced dissipationless transverse transport responses via the anomalous Hall effect, offering a route towards magnetic sensing and spintronic readout functionalities. In most ferromagnets, the anomalous Hall current is constrained to lie in the plane perpendicular to the magnetization (or applied magnetic field). Recently, it has been recognized that selected symmetries can also permit a Hall response in a traditionally forbidden configuration, where the Hall current lies in the same plane as the magnetization, realizing an in-plane anomalous Hall effect. Reported realizations of this effect, however, are typically much weaker than the conventional Hall response in the same material. Here, through engineering specific crystallographic mirror symmetry-breaking, we realize a strongly enhanced in-plane anomalous Hall response in monoclinic Cr3Te4 with room-temperature ferromagnetism. Remarkably, the in-plane anomalous Hall signal exceeds the out-of-plane response by a factor of five, with which we demonstrate a unique in-plane field and current sensing functionality. Combined with density functional theory calculations, our results establish low-crystalline-symmetry ferromagnets with near-Fermi-level Weyl points as a practical platform for symmetry-engineered Hall responses, and point to a route towards room-temperature, geometry-flexible sensing devices.

cond-mat.mtrl-sci↗

arXiv2026

Relaxation-driven topological domains in moiré materials

Spatial control of topology is highly desirable for realizing tunable quantum functionalities in materials. Moiré superlattices formed by twisting van der Waals heterostructures provide a natural platform for spatially modulated electronic phases, yet the emergence of tunable topological domains in these systems remains largely unexplored. Here we show that structural relaxation in twisted bilayer BiSb drives the formation of a distinct moiré topological phase, characterized by coexisting topologically nontrivial (Z$_2$ = 1) and trivial (Z$_2$ = 0) domains within a single moiré unit cell. As the twist angle is reduced, relaxation-induced modulation of the interlayer separation stabilizes an expanding network of topological regions embedded within trivial backgrounds of the moiré unit cell. The resulting internal domain boundaries host topologically-protected gapless 1D edge states that are directly visible in our simulated scanning-tunnelling microscopy maps.Furthermore, we demonstrate that the real-space topological domain structure and associated gapless edge states can be reversibly tuned by an out-of-plane electric field. Together, these results establish twisted BiSb as a promising platform for programmable topological domain patterning, where intrinsic networks of edge channels can be continuously tuned and electrically reconfigured in moiré materials.

cond-mat.mtrl-sci↗

arXiv2025

Engineering stacking-induced topological phase transitions in bilayer heterostructures

Nonmagnetic topological insulators (TIs) are known for their robust metallic surface/edge states that are protected by time-reversal symmetry, making them promising candidates for next-generation spintronic and nanoelectronic devices. Traditional approaches to realizing TIs have focused on inducing band inversion via strong spin-orbit coupling (SOC), yet many materials with substantial SOC often remain topologically trivial. In this work, we present a materials-design strategy for engineering topologically non-trivial phases, e.g., quantum spin Hall phases, by vertically stacking topologically trivial Rashba monolayers in an inverted fashion. Using BiSb as a prototype system, we demonstrate that while the BiSb monolayer is topologically trivial (despite having significant SOC), an inverted BiSb-SbBi bilayer configuration realizes a non-trivial topological phase with enhanced spin Hall conductivity. We further reveal a delicate interplay between the SOC strength and the interlayer electron tunneling that governs the emergence of a nontrivial topological phase in the bilayer heterostructure. This phase can be systematically tuned using an external electric field, providing an experimentally accessible means of controlling the system's topology. Our magnetotransport studies further validate this interplay, by revealing $g$-factor suppression and the emergence a zeroth Landau level. Notably, the inverted bilayer heterostructure exhibits a robust and tunable spin Hall effect, with performance comparable to that of state-of-the-art materials. Thus, our findings unveil an alternative pathway for designing and engineering functional properties in 2D topological systems using topologically trivial constituent monolayers.

cond-mat.mes-hall↗

arXiv2025

Suppression of auxetic behavior in black phosphorus with sulfur substitution

Sulfur-doped black phosphorus (b-P) has recently emerged as a promising candidate for next-generation electronic and optoelectronic technologies owing to its enhanced environmental stability and tunable electronic properties. In this work, we systematically investigate the effects of sulfur substitution on the elastic, mechanical, and electronic properties of b-P, with a particular focus on its auxetic behavior (that is, negative Poisson's ratio), using first-principles density functional theory calculations. Our results unveil the fundamental origin of the intrinsic auxetic response in pristine b-P and elucidate how sulfur incorporation alters this behavior. We find that sulfur atoms distort the characteristic bow-tie structural motif responsible for the negative Poisson's ratio in b-P, thereby suppressing the in-plane auxeticity. Moreover, the resulting charge redistribution also effectively quenches the out-of-plane auxetic response of b-P. With increasing sulfur content, the bulk modulus and Poisson's ratio increase, whereas the Young's modulus, shear modulus, and Debye temperature decrease. Additionally, sulfur substitution suppresses the semiconducting properties of b-P, giving rise to metallicity. These findings highlight that although sulfur substitution enhances the environmental stability of b-P, it also substantially modifies its elastic and mechanical properties, particularly the auxetic behavior, which is an important consideration in the design of nanoscale electronic devices.

cond-mat.mtrl-sci↗

arXiv2024

First-principles investigation of elastic, vibrational, and thermodynamic properties of kagome metals CsM$_3$Te$_5$ (M = Ti, Zr, Hf)

Kagome metals are a unique class of quantum materials characterized by their distinct atomic lattice arrangement, featuring interlocking triangles and expansive hexagonal voids. These lattice structures impart exotic properties, including superconductivity, interaction-driven topological many-body phenomena, and magnetism, among others. The kagome metal CsM3Te5 (where M = Ti, Zr, or Hf) exhibits both superconductivity and nontrivial topological electronic properties, offering a promising platform for exploring topological superconductivity. This study employs first-principles density functional theory calculations to systematically analyze the elastic, mechanical, vibrational, thermodynamic, and electronic properties of CsM3Te5 (M = Ti, Zr, Hf). Our calculations reveal that the studied compounds - CsTi3Te5, CsZr3Te5, and CsHf3Te5 - are ductile metals with elastic properties akin to the hexagonal Bi and Sb, with average elastic constants, including a bulk modulus of 27 GPa, a shear modulus of 11 GPa, and Young's modulus of 29 GPa. We observe peculiar dispersionless, flat, phonon branches in the vibrational spectra of these metals. Additionally, we thoroughly analyze the symmetries of the zone-center phonon eigenvectors and predict vibrational fingerprints of the Raman- and infrared-active phonon modes. The analysis of thermodynamic properties reveals the Einstein temperature for CsTi3Te5, CsZr3Te5, and CsHf3Te5 to be 66, 54, and 53 K, respectively. Our orbital-decomposed electronic structure calculations reveal significant in-plane steric interactions and multiple Dirac band crossings near the Fermi level. We further investigate the role of spin-orbit coupling effect on the studied properties. This theoretical investigation sheds light on the intriguing quantum behaviour of kagome metals.

cond-mat.mtrl-sci↗

arXiv2024

Exploring nonlinear Rashba effect and spin Hall conductivity in Janus MXenes W2COX (X = S, Se, Te)

Rashba spin-orbit coupling (RSOC) facilitates spin manipulation without relying on an external magnetic field, opening up exciting possibilities for advanced spintronic devices. In this work, we examine the effects of crystal momentum ($k$) nonlinearity and anisotropy on the conventional Rashba effect, with a particular focus on their impact on the spin Hall conductivity (SHC) in a newly predicted family of 2D Janus materials, W$_2$COX (X = S, Se, Te). Using first-principles density functional theory calculations, we confirm the dynamical and mechanical stability of the studied 2D materials. Strikingly, this materials family exhibits pronounced nonlinear Rashba spin splitting at the $Γ$ point of Brillouin zone near the Fermi level, which cannot be adequately described by the linear-$k$ Rashba model. Therefore, third-order momentum contributions ({$k^3$}) must be incorporated into the Rashba Hamiltonian. Our analysis reveals that among the studied systems, W$_2$COS exhibits the highest {$k^3$} contribution of $-45.9$\,eV\,{Å$^3$}, despite having the lowest linear Rashba constant. A detailed analysis of electronic structure reveals topological nontrivial behaviour in these 2D materials, yielding sizable SHC that is primarily governed by the nonlinear Rashba effect. Notably, these materials also exhibit large spin Hall angle (0.018 -- 2.5), which is comparable to that of in bulk topological insulators like Bi$_2$Se$_3$ and Bi$_2$Te$_3$, and surpassing those in narrow bandgap bulk semiconductors GeTe and SnTe, as well as heavy metals such as Pt. Sizable SHC, large spin Hall angles, and the ability to tune SHC via electric fields without altering the topological properties, rooted in the crystal field splitting, underscore the potential of these materials for spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Promises and technological prospects of two-dimensional Rashba materials

The Rashba spin-orbit coupling effect, primarily arising from structural-inversion asymmetry in periodic crystals, has garnered considerable attention due to its tunability and potential applications in spintronics. Its capability to manipulate electron spin without an external magnetic field opens new avenues for spintronic device design, particularly in semiconductor technology. Within this framework, 2D Rashba materials hold special interest due to their inherent characteristics, which facilitate miniaturization and engineering capabilities. In this Perspective article, we provide an overview of recent advancements in the research of 2D Rashba materials, aiming to offer a comprehensive understanding of the diverse manifestations and multifaceted implications of the Rashba effect in material science. Rather than merely presenting a list of materials, our approach involves synthesizing various viewpoints, assessing current trends, and addressing challenges within the field. Our objective is to bridge the gap between fundamental research and practical applications by correlating each material with the necessary advancements required to translate theoretical concepts into tangible technologies. Furthermore, we highlight promising avenues for future research and development, drawing from insights gleaned from the current state of the field.

cond-mat.mtrl-sci↗