SearcharxivSearch

arXiv subjects

Arka Bandyopadhyay

Publications and source records attributed to Arka Bandyopadhyay.

13 recordsLinked to original sources

Altermagnetism from the viewpoint of chemistry

Magnetism has been a central theme of research in chemistry, physics, and materials science, with chemical composition and bonding playing key roles in determining magnetic behavior. Altermagnets are a newly identified class of magnetic materials that combine features of conventional ferromagnets and antiferromagnets, arising from specific symmetry and electronic structure motifs. In this review, we present a chemistry-driven viewpoint on altermagnetism, highlighting how crystal chemistry, bonding, and electronic structure enable this unconventional magnetic order. We begin by introducing the fundamental concepts required to understand altermagnets, with an emphasis on symmetry considerations, orbital character, and electronic structure signatures. We then survey the diverse material families in which altermagnetism has been identified, drawing attention to coordination environments and structure-property relationships that favor altermagnetic order. We subsequently present experimental approaches which are useful for the characterization of altermagnetic materials. We examine ab initio materials discovery as a promising strategy for identifying new altermagnets, emphasizing how chemical constraints, such as symmetry and bonding, can guide computational searches. Other than their intrinsic importance, altermagnets provide interesting possibilities for technology. For this reason, we highlight possible applications that may be enabled through altermagnetic materials, along with their coupling with existing orders such as ferroelectricity and superconductivity. In conclusion, we point out some challenges and prospects, where chemically-based design guidelines can play an important role towards advancing altermagnetism research. In summary, this review offers an account of recent developments in altermagnetism, from basic concepts to the current state-of-the-art.

cond-mat.mtrl-sci

Refraction-induced transverse charge transport

We introduce a mechanism that produces a Hall-like transverse response in time-reversal-invariant materials, driven entirely by geometric effects. Specifically, we demonstrate that a tilted potential interface causes electron wave packets to undergo a refractionlike deflection upon transmission through the barrier, leading to a finite transverse current and a corresponding Hall-like conductance. Our analytical framework captures the essential features of this refraction-driven charge transport, and the resulting transverse conductance profile is corrob- orated by numerical simulations across different lattice models and device geometries. We further visualize our predicted effect through real-time wave packet dynamics, which reveals its purely geometric origin and the robustness of the transverse response. These findings establish a fundamentally distinct class of Hall-like transport phenomena in mesoscopic systems that preserve time-reversal symmetry.

cond-mat.mes-hall

Nonlinear Hall Effect in Metal-Organic Frameworks

We propose metal-organic frameworks (MOFs) as tunable platforms for nonlinear Hall responses. A universal analytical downfolding scheme maps $C_3$-symmetric frameworks onto star- and honeycomb-lattice models, reproducing first-principles Dirac features. Spin-orbit coupling and broken inversion symmetry gap the Dirac cones, generating Berry-curvature hot spots. Symmetry analysis identifies tailored synthetic pathways, including linker design, as intrinsic routes to engineer nonlinear Hall transport beyond strain and substrate control.

cond-mat.mtrl-sci

Quantum Spin Hall Effect and Su-Schrieffer-Heeger Model Implementation in Novel C3N-based Dumbbell Morphologies

Two-dimensional carbon nitride materials have been the center of attention for their diverse usage in energy harvesting, environmental remediation and nanoelectronic applications. A broad range of utilities with decent synthetic plausibility have made this family a sweet spot to dive into, whereas the underlying analytical aspects are yet to have prominence. Recently, using the machinaries of first principles, we reported a family of six different structures C3NX with a unique dumbbell-shaped morphology, functionalizing the recently synthesized monolayer of C3N. Here we have critically explored the non-trivial topological phases of the semimetallic Dumbbell C3NX sheets and nanoribbons. Spin-orbit coupling induced gap across the Fermi level, its subsequent tuning via an external electric field, portrayal of band inversion from the Berry curvature distribution and the evaluation of topological index using the Wannier charge center (WCC) firmly establishes the traces of topological footprint. The real space decimation scheme and Green function technique evaluate the underlying spectral information with corresponding transport characteristics. Fascinating features of these quasi-1D systems are observed utilizing the Su-Schrieffer-Heeger (SSH) model where different twisted phases reveal distinct topological signatures even in a low atomic mass system like DB C4N.

cond-mat.mes-hall

Field-Tunable Quantum Metric in Few-Layer Phosphorene

The quantum metric -- which quantifies the distance between quantum states -- is a fundamental component of the quantum geometric tensor, playing a crucial role in a wide range of physical phenomena. Its direct detection and control remains a challenge, requiring suitable material candidates. In this work, we present the emergence of a tunable quantum metric in a versatile two-dimensional material platform, namely, few-layer phosphorene. Using ab-initio-derived models, we show how electric fields can be used to substantially enhance the quantum metric as well as the associated quantum weight. Furthermore, we present a layer-dependent evolution of the quantum metric and its interplay with the electric field in this material. Our results establish few-layer phosphorene as a promising platform for exploring control over the quantum metric and the resulting metric responses in real materials.

cond-mat.mes-hall

Berry Curvature Dipole-induced Non-linear Hall Effect in Oxide Heterostructures

The observation of non-linear Hall effects in time-reversal invariant systems has established the intriguing role of band topology beyond Berry curvature in determining transport phenomena. Many of these non-linear responses owe their origin to the Berry curvature dipole (BCD), which, like the Berry curvature (monopole), is also an electronic band structure effect, but is routinely strongly constrained by crystalline symmetries. Here, we propose non-centrosymmetric transition metal oxide heterostructures as promising platforms for realizing and tuning BCD-induced non-linear Hall effects. Specifically, we investigate superlattices of the form $(\mathrm{Ba(Os,Ir)}\mathrm{O}_3)_n/(\mathrm{BaTiO}_3)_4$ ($n{=}1, 2$), comprising metallic perovskite layers ($\mathrm{BaOsO_3}$ or $\mathrm{BaIrO_3}$) sandwiched between insulating ferroelectric $\mathrm{BaTiO_3}$ (BTO). The ferroelectric distortion in BTO breaks inversion symmetry of the superlattice, giving rise to a finite BCD with two symmetry-allowed components of equal magnitude and opposite sign. Our first-principles calculations demonstrate that the magnitude of the BCD -- and consequently the nonlinear Hall response -- can be effectively tuned by varying the number of metallic layers or the choice of the B-site cation in these $\mathrm{ABO_3}$ perovskites. Since Rashba splitting and ferroelectric distortion in these systems are readily controllable via an external electric field or strain, the non-linear Hall response in these materials can be directly engineered. Our findings establish non-centrosymmetric oxide perovskite heterostructures as a versatile platform for exploring and manipulating BCD-driven non-linear transport phenomena.

cond-mat.mtrl-sci

Chirality-tunable non-linear Hall effect

The non-linear generalization of the Hall effect has recently gained much attention, with a rapidly growing list of non-centrosymmetric materials that display higher-order Hall responses under time-reversal invariant conditions. The intrinsic second-order Hall response arises due to the first-order moment of Berry curvature -- termed Berry curvature dipole -- which requires broken inversion and low crystal symmetries. Chiral materials are characterized by their lack of improper symmetries such as inversion, mirror plane, and roto-inversion. Owing to this absence of symmetries, in this work, we propose chiral systems as ideal platforms to study the Berry curvature dipole-induced non-linear Hall effects. We use state-of-the-art first-principles computations, in conjunction with symmetry analyses, to explore a variety of chiral material classes -- metallic \ch{NbSi2}, semiconducting elemental Te, insulating HgS, and topological multifold semimetal CoSi. We present the emergence and tunability of the Berry curvature dipole in these chiral materials. In particular, we demonstrate that the two enantiomeric pairs exhibit an exactly opposite sign of the Berry curvature dipole. We complement our \textit{ab initio} findings with a general tight-binding minimal model and give estimates for non-linear Hall voltages, which are experimentally accessible. Our predictions put forward chiral materials as an emerging class of materials to realize non-linear Hall phenomena and highlight an as-yet-unexplored aspect of these systems.

cond-mat.mtrl-sci

Non-linear Hall Effects: Mechanisms and Materials

This review presents recent breakthroughs in the realm of nonlinear Hall effects, emphasizing central theoretical foundations and recent experimental progress. We elucidate the quantum origin of the second-order Hall response, focusing on the Berry curvature dipole, which may arise in inversion symmetry broken systems. The theoretical framework also reveals the impact of disorder scattering effects on the nonlinear response. We further discuss the possibility of obtaining nonlinear Hall responses beyond the second order. We examine symmetry-based indicators essential for the manifestation of nonlinear Hall effects in time-reversal symmetric crystals, setting the stage for a detailed exploration of theoretical models and candidate materials predicted to exhibit sizable and tunable Berry curvature dipole. We summarize groundbreaking experimental reports on measuring both intrinsic and extrinsic nonlinear Hall effects across diverse material classes. Finally, we highlight some of the other intriguing nonlinear effects, including nonlinear planar Hall, nonlinear anomalous Hall, and nonlinear spin and valley Hall effects. We conclude with an outlook on pivotal open questions and challenges, marking the trajectory of this rapidly evolving field.

cond-mat.mes-hall

Origin of flat bands and non-trivial topology in coupled kagome lattices

We propose an exact analytical decimation transformation scheme to explore the fascinating coexistence of flat bands and Dirac fermions in three-dimensional coupled kagome systems. Our method allows coarse-graining of the parameter space that maps the original system to an equivalent low-level lattice. The decimated system enables defining a quantity in the tight-binding parameter space that predominantly controls the emergence of a flat band (FB) and provides a specific criterion for absolute flatness. Likewise, in terms of atomic separations, we develop a quantity that primarily controls the FB width in real materials and thus can be helpful in predicting new systems hosting FB as well as in tuning the FB width. Our predictions on the emergence of the flat band and Dirac fermions are confirmed for M$_3$X (M= Ni, Mn, Co, Fe; X= Al, Ga, In, Sn, Cr,...) family of materials, leveraging materials databases and first-principles calculations. Our work provides an analytical formalism that enables accurate predictions of FBs in real materials.

cond-mat.mtrl-sci

Berry Curvature Dipole and its Strain Engineering in Layered Phosphorene

The emergence of the fascinating non-linear Hall effect intrinsically depends on the non-zero value of the Berry curvature dipole. In this work, we predict that suitable strain engineering in layered van der Waals material phosphorene can give rise to a significantly large Berry curvature dipole. Using symmetry design principles, and a combination of feasible strain and staggered on-site potentials, we show how a substantial Berry curvature dipole may be engineered at the Fermi level. We discover that monolayer phosphorene exhibits the most intense Berry curvature dipole peak near 11.8% strain, which is also a critical point for the topological phase transition in pristine phosphorene. Furthermore, we have shown that the necessary strain value to achieve substantial Berry curvature dipole can be reduced by increasing the number of layers. We have revealed that strain in these van der Waals systems not only alters the magnitude of Berry curvature dipole to a significant value but allows control over its sign. We are hopeful that our predictions will pave way to realize the non-linear Hall effect in such elemental van der Waals systems.

cond-mat.mes-hall

Non-Hermitian Topology and Flat Bands via an Exact Real Space Decimation Scheme

In recent years, non-Hermitian phases in classical and quantum systems have garnered significant attention. In particular, their intriguing band geometry offers a platform for exploring unique topological states and unconventional quantum dynamics. However, their topological characterization becomes particularly interesting and challenging in complex multiband systems. Here we propose a decimation framework, which leverages real space renormalization group to streamline the analysis of complex multiband non-Hermitian systems. Our systematic approach allows us to probe different phases and transitions, analyze bulk-boundary correspondence, formulate generalized Brillouin zones, investigate open boundary spectra, survey non-Bloch van Hove singularities, study disorder-induced effects, and explore tunable non-Hermitian flat band physics. Additionally, our framework allows proposing a hypothesis about quasi-one-dimensional bipartite non-Hermitian systems with flat bands, demonstrating their decoupling into Su-Schrieffer-Heeger chains and compact localized states across various models. Our work presents a powerful and comprehensive framework for understanding the intricate properties of non-Hermitian multiband systems, offering insights into the evolving landscape of non-Hermitian topological physics.

cond-mat.mes-hall

Electrically switchable giant Berry curvature dipole in silicene, germanene and stanene

The anomalous Hall effect in time-reversal symmetry broken systems is underpinned by the concept of Berry curvature in band theory. However, recent experiments reveal that the nonlinear Hall effect can be observed in non-magnetic systems without applying an external magnetic field. The emergence of nonlinear Hall effect under time-reversal symmetric conditions can be explained in terms of non-vanishing Berry curvature dipole arising from inversion symmetry breaking. In this work, we availed realistic tight-binding models, first-principles calculations, and symmetry analyses to explore the combined effect of transverse electric field and strain, which leads to a giant Berry curvature dipole in the elemental buckled honeycomb lattices -- silicene, germanene, and stanene. The external electric field breaks the inversion symmetry of these systems, while strain helps to attain an asymmetrical distribution of Berry curvature of a single valley. Furthermore, the topology of the electronic wavefunction switches from the band inverted quantum spin Hall state to normal insulating one at the gapless point. This band gap closing at the critical electric field strength is accompanied by an enhanced Berry curvature and concomitantly a giant Berry curvature dipole at the Fermi level. Our results predict the occurrence of an electrically switchable nonlinear electrical and thermal Hall effect in a new class of elemental systems that can be experimentally verified.

cond-mat.mes-hall

Non-Hermiticity induced Exceptional Points and Skin Effect in the Dice-Haldane Model

The interplay of topology and non-Hermiticity has led to diverse, exciting manifestations in a plethora of systems. In this work, we systematically investigate the role of non-Hermiticity in the Chern insulating Haldane model on a dice lattice. Due to the presence of a non-dispersive flat band, the dice-Haldane model hosts a topologically rich phase diagram with the non-trivial phases accommodating Chern numbers $\pm 2$. We introduce non-Hermiticity into this model in two ways -- through balanced non-Hermitian gain and loss, and by non-reciprocal hopping in one direction. Both these types of non-Hermiticity induce higher-order exceptional points of order three. We substantiate the presence and the order of these higher-order exceptional points using the phase rigidity and its scaling. Further, we construct a phase diagram to identify and locate the occurrence of these exceptional points in the parameter space. Non-Hermiticity has yet more interesting consequences on a finite-sized lattice. Unlike for balanced gain and loss, in the case of non-reciprocal hopping, the nearest-neighbour dice lattice system under periodic boundary conditions accommodates a finite, non-zero spectral area in the complex plane. This manifests as the non-Hermitian skin effect when open boundary conditions are invoked. In the more general case of the dice-Haldane lattice model, the non-Hermitian skin effect can be caused by both gain and loss or non-reciprocity. Fascinatingly, the direction of localization of the eigenstates depends on the nature and strength of the non-Hermiticity. We establish the occurrence of the skin effect using the local density of states, inverse participation ratio and the edge probability, and demonstrate its robustness to disorder. Our results place the dice-Haldane model as an exciting platform to explore non-Hermitian physics.

quant-ph