arXiv subjects

Arkadi A. Odintsov

Publications and source records attributed to Arkadi A. Odintsov.

6 recordsLinked to original sources

arXiv1999

Schottky barriers in carbon nanotube heterojunctions

We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range (from the nanotube radius to the nanotube length) sensitively depending on the doping strength. The Schottky barrier gives rise to the asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao {\it et al.} and Fuhrer {\it et al.} Dynamic charge build-up near the junction results in a step-like growth of the current at reverse bias.

cond-mat.mes-hall↗

arXiv1999

Towards single-electron metrology

We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications.

cond-mat.mes-hall↗

arXiv1999

Aharonov-Bohm effect in circular carbon nanotubes

We study the interference of interacting electrons in toroidal single-wall carbon nanotubes coupled to metallic electrodes by tunnel junctions. The dc conductance shows resonant features as a function of the gate voltage and the magnetic field. The conductance pattern is determined by the interaction parameter, which in turn can be cross-checked against the exponents governing the transport at high temperatures. The coordinate dependence of the conductance reflects electron correlations in one-dimensional space.

cond-mat.mes-hall↗

arXiv1999

Contact phenomena in carbon nanotubes

Poor screening of the long-range Coulomb interaction in one-dimensional carbon nanotubes results in a peculiar picture of contact phenomena. Being brought to a contact with a metal, conducting nanotube accumulates electric charge whose density decays slowly with the distance from the contact. This should be contrasted to a conventional metal-metal contact where the charge density decreases exponentially at atomic distances. Implications for experiments are discussed.

cond-mat.mes-hall↗

arXiv1998

Universality of electron correlations in conducting carbon nanotubes

Effective low-energy Hamiltonian of interacting electrons in conducting single-wall carbon nanotubes with arbitrary chirality is derived from the microscopic lattice model. The parameters of the Hamiltonian show very weak dependence on the chiral angle, which makes the low energy properties of conducting chiral nanotubes universal. The strongest Mott-like electron instability at half filling is investigated within the self-consistent harmonic approximation. The energy gaps occur in all modes of elementary excitations and estimate at $0.01-0.1$ eV.

cond-mat.mes-hall↗

arXiv1997

Precursors of Mott insulator in modulated quantum wires

We investigate the transport of interacting electrons through single-mode quantum wires whose parameters are periodically modulated on the scale of the electronic Fermi wave length. The Umklapp and backscattering of electrons can be described in terms of non-uniform quantum sine-Gordon-like models which also incorporate the effects of electronic reservoirs (electrodes) adiabatically coupled to the wire. We concentrate on weak Umklapp scattering and analyze the precursors of the Mott transition. At half-filling the temperature dependence of the extra resistance $ΔR = R - π\hbar/e^2$ of a modulated quantum wire of length $L$ changes from the interaction-dependent "bulk" power-law $ΔR \propto T^{4K_ρ-3}$ at high temperatures, $T \gg v_ρ/L$, to the universal $ΔR \propto T^2$ behavior at low temperatures, $T \ll v_ρ/L$. Away from half-filling the "bulk" results are qualitatively incorrect even at high temperatures $v_ρ/L \ll T \ll T^{*}$ despite the electron coherence in the wire is absent in this regime.

cond-mat.mes-hall↗