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Arne Brataas

Publications and source records attributed to Arne Brataas.

At least 181 records · Page 10Linked to original sources

Theory of current-driven magnetization dynamics in inhomogeneous ferromagnets

We give a brief account of recent developments in the theoretical understanding of the interaction between electric currents and inhomogeneous ferromagnetic order parameters. We start by discussing the physical origin of the spin torques responsible for this interaction and construct a phenomenological description. We then consider the electric current-induced ferromagnetic instability and domain-wall motion. Finally, we present a microscopic justification of the phenomenological description of current-driven magnetization dynamics, with particular emphasis on the dissipative terms, the so-called Gilbert damping $α$ and the $β$ component of the adiabatic current-driven torque.

cond-mat.mes-hall↗

Proximity effect-assisted absorption of spin currents in superconductors

The injection of pure spin current into superconductors by the dynamics of a ferromagnetic contact is studied theoretically. Taking into account suppression of the order parameter at the interfaces (inverse proximity effect) and the energy-dependence of spin-flip scattering, we determine the temperature-dependent ferromagnetic resonance linewidth broadening. Our results agree with recent experiments in Nb|permalloy bilayers [C. Bell et al., arXiv:cond-mat/0702461].

cond-mat.mes-hall↗

Spin injection and relaxation in a mesoscopic superconductor

We study spin accumulation and spin relaxation in a superconducting nanowire. Spins are injected and detected by using a set of magnetic tunnel contact electrodes, closely spaced along the nanowire. We observe a giant enhancement of the spin accumulation of up to five orders of magnitude on transition into the superconducting state, consistent with the expected changes in the density of states. The spin relaxation length decreases by an order of magnitude from its value in the normal state. These measurements combined with our theoretical model, allow us to distinguish the individual spin flip mechanisms present in the transport channel. Our conclusion is that magnetic impurities rather than spin-orbit coupling dominate spin-flip scattering in the superconducting state.

cond-mat.mes-hall↗

Spin transport in mesoscopic rings with inhomogeneous spin-orbit coupling

We revisit the problem of electron transport through mesoscopic rings with spin-orbit (SO) interaction. In the well-known path-integral approach, the scattering states for a quasi-1D ring with quasi-1D leads can be expressed in terms of spinless electrons subject to a fictitious magnetic flux. We show that spin-dependent quantum-interference effects in small rings are strongest for spatially inhomogeneous SO interactions, in which case spin currents can be controlled by a small external magnetic field. Mesoscopic spin Hall effects in four-terminal rings can also be understood in terms of the fictitious magnetic flux.

cond-mat.mes-hall↗

Circuit theory for crossed Andreev reflection and nonlocal conductance

Nonlocal currents, in devices where two normal metal terminals are contacted to a superconductor, are determined using the circuit theory of mesoscopic superconductivity. We calculate the conductance associated with crossed Andreev reflection and electron transfer between the two normal metal terminals, in addition to the conductance from direct Andreev reflection and quasiparticle tunneling. Dephasing and proximity effect are taken into account.

cond-mat.mes-hall↗

Elementary Charge Transfer Processes in a Superconductor-Ferromagnet Entangler

We study the production of spatially separated entangled electrons in ferromagnetic leads from Cooper pairs in a superconducting lead. We give a complete description of the elementary charge transfer processes, i) transfer of Cooper pairs out of the superconductor by Andreev reflection and ii) distribution of the entangled quasiparticles among the ferromagnetic leads, in terms of their statistics. The probabilities that entangled electrons flow into spatially separated leads are completely determined by experimentally measurable conductances and polarizations. Finally, we investigate how currents, noise and cross correlations are affected by transport of entangled electrons.

cond-mat.supr-con↗

Spin Injection in Quantum Wells with Spatially Dependent Rashba Interaction

We consider Rashba spin-orbit effects on spin transport driven by an electric field in semiconductor quantum wells. We derive spin diffusion equations that are valid when the mean free path and the Rashba spin-orbit interaction vary on length scales larger than the mean free path in the weak spin-orbit coupling limit. From these general diffusion equations, we derive boundary conditions between regions of different spin-orbit couplings. We show that spin injection is feasible when the electric field is perpendicular to the boundary between two regions. When the electric field is parallel to the boundary, spin injection only occurs when the mean free path changes within the boundary, in agreement with the recent work by Tserkovnyak et al. [cond-mat/0610190].

cond-mat.mes-hall↗

Boundary spin Hall effect in a two-dimensional semiconductor system with Rashba spin-orbit coupling

We derive boundary conditions for the coupled spin-charge diffusion equations at a transmitting interface between two-dimensional electron systems with different strengths of the Rashba spin-orbit (SO) coupling $α$, and an electric field parallel to the interface. We consider the limit where the spin-diffusion length l_s is long compared to the electron mean free path l, and assume that $α$ changes discontinuously on the scale of l_s. We find that the spin density is also discontinuous on the scale of l_s. In the case where the electron mobility is constant across the interface, this leads to the complete suppression of the expected spin injection from a region with $α\neq0$ into a non-SO region with $α=0$.

cond-mat.mtrl-sci↗

Spin relaxation times in disordered graphene

We consider two mechanisms of spin relaxation in disordered graphene. i) Spin relaxation due to curvature spin orbit coupling caused by ripples. ii) Spin relaxation due to the interaction of the electronic spin with localized magnetic moments at the edges. We obtain analytical expressions for the spin relaxation times, tau_SO and tau_J due to both mechanisms and estimate their values for realistic parameters of graphene samples. We obtain that spin relaxation originating from these mechanisms is very weak and spin coherence is expected in disordered graphene up to samples of length L ~ 1 micron.

cond-mat.mes-hall↗

Giant current-driven domain wall mobility in (Ga,Mn)As

We study theoretically hole current-driven domain wall dynamics in (Ga,Mn)As. We show that the spin-orbit coupling causes significant hole reflection at the domain wall, even in the adiabatic limit when the wall is much thicker than the Fermi wavelength, resulting in spin accumulation and mistracking between current-carrying spins and the domain wall magnetization. This increases the out-of-plane non-adiabatic spin transfer torque and consequently the current-driven domain wall mobility by three to four orders of magnitude. Trends and magnitude of the calculated domain wall current mobilities agree with experimental findings.

cond-mat.mes-hall↗

Perpendicular spin valves with ultra-thin ferromagnetic layers

We address two finite size effects in perpendicular transport through magnetic multilayers. When the magnetic layer thickness in spin valves becomes of the order or smaller than the spin-flip diffusion length, structural asymmetries affect the transport properties. A magnetic layer with thickness approaching the magnetic coherence length becomes transparent for spin currents polarized perpendicular to the magnetization. We use the generalized magnetoelectronic circuit theory to investigate both effects on the angular magnetoresistance (aMR) and spin transfer torque. We analyze recent aMR experiments to determine the spin-flip diffusion length in the ferromagnet as well as the interface spin-mixing conductance and propose a method to measure the ferromagnetic coherence length.

cond-mat.mes-hall↗

Circuit theory of crossed Andreev reflection

We consider transport in a three terminal device attached to one superconducting and two normal metal terminals, using the circuit theory of mesoscopic superconductivity. We compute the nonlocal conductance of the current out of the first normal metal terminal in response to a bias voltage between the second normal metal terminal and the superconducting terminal. The nonlocal conductance is given by competing contributions from crossed Andreev reflection and electron cotunneling, and we determine the contribution from each process. The nonlocal conductance vanishes when there is no resistance between the superconducting terminal and the device, in agreement with previous theoretical work. Electron cotunneling dominates when there is a finite resistance between the device and the superconducting reservoir. Decoherence is taken into account, and the characteristic timescale is the particle dwell time. This gives rise to an effective Thouless energy. Both the conductance due to crossed Andreev reflection and electron cotunneling depend strongly on the Thouless energy. We suggest to experimentally determine independently the conductance due to crossed Andreev reflection and electron cotunneling in measurement of both energy and charge flow into one normal metal terminal in response to a bias voltage between the other normal metal terminal and the superconductor.

cond-mat.supr-con↗

Magnetization damping in a local-density approximation

The linear response of itinerant transition metal ferromagnets to transverse magnetic fields is studied in a self-consistent adiabatic local-density approximation. The susceptibility is calculated from a microscopic Hamiltonian, including spin-conserving impurities, impurity induced spin-orbit interaction and magnetic impurities using the Keldysh formalism. The Gilbert damping constant in the Landau-Lifshitz-Gilbert equation is identified, parametrized by an effective transverse spin dephasing rate, and is found to be inversely proportional to the exchange splitting. Our result justify the phenomenological treatment of transverse spin dephasing in the study of current-induced magnetization dynamics in weak, itinerant ferromagnets by Tserkovnyak \textit{et al.}. We show that neglect of gradient corrections in the quasiclassical transport equations leads to incorrect results when the exchange potential becomes of the order of the Fermi energy.

cond-mat.mes-hall↗

Current-induced magnetization dynamics in disordered itinerant ferromagnets

Current-driven magnetization dynamics in ferromagnetic metals are studied in a self-consistent adiabatic local-density approximation in the presence of spin-conserving and spin-dephasing impurity scattering. Based on a quantum kinetic equation, we derive Gilbert damping and spin-transfer torques entering the Landau-Lifshitz equation to linear order in frequency and wave vector. Gilbert damping and a current-driven dissipative torque scale identically and compete, with the result that a steady current-driven domain-wall motion is insensitive to spin dephasing in the limit of weak ferromagnetism. A uniform magnetization is found to be much more stable against spin torques in the itinerant than in the \textit{s}-\textit{d} model for ferromagnetism. A dynamic spin-transfer torque reminiscent of the spin pumping in multilayers is identified and shown to govern the current-induced domain-wall distortion.

cond-mat.mes-hall↗

Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors

Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is independent of the domain wall shape and width when the latter is larger than the Fermi wavelength. For typical parameters, the intrinsic domain wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.

cond-mat.mes-hall↗

Nonlocal magnetization dynamics in ferromagnetic heterostructures

Two complementary effects modify the GHz magnetization dynamics of nanoscale heterostructures of ferromagnetic and normal materials relative to those of the isolated magnetic constituents: On the one hand, a time-dependent ferromagnetic magnetization pumps a spin angular-momentum flow into adjacent materials and, on the other hand, spin angular momentum is transferred between ferromagnets by an applied bias, causing mutual torques on the magnetizations. These phenomena are manifestly nonlocal: they are governed by the entire spin-coherent region that is limited in size by spin-flip relaxation processes. We review recent progress in understanding the magnetization dynamics in ferromagnetic heterostructures from first principles, focusing on the role of spin pumping in layered structures. The main body of the theory is semiclassical and based on a mean-field Stoner or spin-density--functional picture, but quantum-size effects and the role of electron-electron correlations are also discussed. A growing number of experiments support the theoretical predictions. The formalism should be useful to understand the physics and to engineer the characteristics of small devices such as magnetic random-access memory elements.

cond-mat.mes-hall↗

Voltage generation by ferromagnetic resonance

A ferromagnet can resonantly absorbs rf radiation to sustain a steady precession of the magnetization around an internal or applied magnetic field. We show that under these ferromagnetic resonance (FMR) conditions, a dc voltage is generated at a normal-metal electric contact to a ferromagnet with spin-flip scattering. This mechanism allows an easy electric detection of magnetization dyamics.

cond-mat.mes-hall↗

Resistance noise in spin valves

Fluctuations of the magnetization in spin valves are shown to cause resistance noise that strongly depends on the magnetic configuration. Due to the applied external field and the dynamic exchange interaction through the normal metal spacer, the electrical noise level of the antiparallel configuration can exceed that of the parallel one by an order of magnitude, in agreement with recent experimental results.

cond-mat.mes-hall↗