arXiv subjects

Arne Nylandsted Larsen

Publications and source records attributed to Arne Nylandsted Larsen.

4 recordsLinked to original sources

arXiv2015

Light emission from silicon with tin-containing nanocrystals

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ~ 10^{17} cm^{-3} and ~ 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.

cond-mat.mes-hall↗

arXiv2010

Luminescence decay dynamics of germanium nanocrystals in silicon

The dynamics of the luminescence decay from germanium nanocrystals embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. At room temperature the characteristic decay time is of the order of 50 nanoseconds while it extends into the microsecond range at low temperatures. The decay is dominated by non-radiative processes, which show a typical thermal activation energy of a few meV.

cond-mat.mes-hall↗

arXiv2010

Tuning the plasmon resonance of metallic tin nanocrystals in Si-based materials

The optical properties of metallic tin nanoparticles embedded in silicon-based host materials were studied. Thin films containing the nanoparticles were produced using RF magnetron sputtering followed by ex situ heat treatment. Transmission electron microscopy was used to determine the nanoparticle shape and size distribution; spherical, metallic tin nanoparticles were always found. The presence of a localized surface plasmon resonance in the nanoparticles was observed when SiO2 and amorphous silicon were the host materials. Optical spectroscopy revealed that the localized surface plasmon resonance is at approximately 5.5 eV for tin nanoparticles in SiO2, and at approximately 2.5 eV in amorphous silicon. The size of the tin nanoparticles in SiO2 can be varied by changing the tin content of the films; this was used to tune the localized surface plasmon resonance.

cond-mat.mes-hall↗

arXiv2009

Anomalous temperature dependence of the the spin-flip thermalization time between the dark and bright exciton states in silicon nanocrystals

Silicon nanocrystals are studied by time-resolved fluorescence spectroscopy. After laser excitation the bright and dark exciton ground state levels are populated at random, but subsequently the decay curves reveal a thermalization between these levels. The characteristic thermalization time is found to be approximately 100 ns for temperatures below 100 K and surprisingly increases for higher temperatures. The decay curves are analyzed using a simple two-state model for the bright and dark exciton ground states.

cond-mat.mes-hall↗