arXiv subjects

Arno Moerman

Publications and source records attributed to Arno Moerman.

4 recordsLinked to original sources

arXiv2026

A variability-aware simulation and design workflow for wafer-scale, heterogeneously integrated lithium niobate modulators

We present a variability-aware simulation framework for heterogeneously integrated lithium niobate traveling-wave modulators. The framework incorporates fabrication-variation data obtained from our dedicated pilot line and enables efficient optimisation of geometric parameters to ensure stable device performance across wafer-scale manufacturing. The proposed multi-parameter optimisation method enables the efficient identification of modulator designs that simultaneously achieve target performance metrics (Vpi, optical insertion loss, and 3dB electro-optic bandwidth) while maintaining robustness against fabrication-induced variations. Using this methodology on two representative modulator architectures, we theoretically demonstrate that reliable wafer-scale integration of lithium niobate modulators on silicon photonics via micro-transfer printing is feasible and can be systematically engineered.

physics.optics↗

arXiv2026

Micro-Transfer Printing of Lithium Niobate on 200 mm Silicon Photonics: A High-Speed Heterogeneous Wafer-Scale Platform

The rapid growth of artificial intelligence (AI) and other data center applications is driving the demand for photonic interconnects that combine high-speed with low energy consumption, making scalability a critical requirement. Micro-transfer printing (MTP) has emerged as a promising technique for the wafer-scale heterogeneous integration of thin film lithium niobate (TFLN) onto silicon photonics (SiPho) platforms. Here, we demonstrate heterogeneous SiPho TFLN integration across four full 200 mm wafers with a 3sigma placement accuracy down to 420 nm and a printing yield of larger than 95percentage. Low insertion loss less than 2 dB over 600 phase modulators (300 amplitude modulators) is achieved. A half wave voltage of 4 V in push pull configuration, and high-speed modulation with a bandwith larger than 70 GHz is demonstrated on a subset of tested devices.

physics.optics↗

arXiv2026

Thin-film lithium tantalate for ultraviolet integrated electro-optic modulator

The realization of integrated, high-speed ultraviolet (UV) modulation is pivotal for the advancement of quantum information processing, portable atomic clocks, and secure solar-blind communications. While mature photonic platforms have facilitated sophisticated system-level integration across visible and infrared spectra, high-speed active modulation in UV remains with traditional bulk crystals. Consequently, a scalable integrated solution that simultaneously combines low insertion loss and extreme compactness with high modulation efficiency has remained challenging. Here, we report the first integrated UV electro-optic modulator on a thin-film lithium tantalate (TFLT) platform. By employing a compact lumped-electrode design, we achieve a record-low V{\pi}L of 85 mV\cdot cm at 375 nm, providing an up to four orders of magnitude improvement in terms of bandwidth/V{\pi} L over bulk technologies. The device demonstrates a robust extinction ratio of 22.7 dB, a low insertion loss of 1.3 dB, and a V{\pi} of 4.2V. Although the measured 3-dB bandwidth of 922 MHz is currently limited by photodetector performance, the small device footprint of 1.16 mm and electrode design of 200 {\mu}m indicate intrinsic potential for high-speed operation beyond 67 GHz which is confirmed by the electrical-to-electrical response. This work establishes TFLT as a disruptive platform for wafer-scale compatible active UV photonics, enabling the next generation of scalable quantum and communication systems.

physics.optics↗

arXiv2025

A high-speed heterogeneous lithium tantalate silicon photonics platform

The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic components onto a single chip, enhancing the performance of optical transceivers. Here, silicon photonics, benefiting from mature fabrication processes, has gained prominence. The platform combines modulators, switches, photodetectors and low-loss waveguides on a single chip. However, emerging standards like 1600ZR+ potentially exceed the capabilities of silicon-based modulators. To address these limitations, thin-film lithium niobate has been proposed as an alternative to silicon photonics, offering a low voltage-length product and exceptional high-speed modulation properties. More recently, the first demonstrations of thin-film lithium tantalate circuits have emerged, addressing some of the disadvantages of lithium niobate enabling a reduced bias drift and enhanced resistance to optical damage. As such, making it a promising candidate for next-generation photonic platforms. However, a persistent drawback of such platforms is the lithium contamination, which complicates integration with CMOS fabrication processes. Here, we present for the first time the integration of lithium tantalate onto a silicon photonics chip. This integration is achieved without modifying the standard silicon photonics process design kit. Our device achieves low half-wave voltage (3.5 V), low insertion loss (2.9 dB) and high-speed operation (> 70 GHz), paving the way for next-gen applications. By minimising lithium tantalate material use, our approach reduces costs while leveraging existing silicon photonics technology advancements, in particular supporting ultra-fast monolithic germanium photodetectors and established process design kits.

physics.optics↗