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Arnulfo Gonzalez

Publications and source records attributed to Arnulfo Gonzalez.

6 recordsLinked to original sources

Cumulative X-ray Damage in Bismuth Selenide Examined by Simultaneous TXM and XRD

Bismuth selenide (Bi2Se3) is a topological insulator with potential applications in thermoelectrics, spintronics, and optoelectronics. However, its response to radiation remains poorly understood. We investigate cumulative X-ray damage in Bi2Se3 using simultane- ous transmission X-ray microscopy (TXM) and X-ray diffraction (XRD) at the Pohang Accelerator Laboratory X-Ray Free Electron Laser (PAL-XFEL) over 27,000 successive pulses. We observe distinct damage mechanisms: rapid hole formation via vaporization within 100 pulses, followed by slower grain refinement and material sputtering over thousands of thermal cycles. Williamson-Hall analysis reveals a progressive transformation from single-crystal to nanocrystalline structure, with grain sizes decreasing from mi- cron to nanometer scale. Finite-element modeling confirms that X-rays penetrate 13.47 {\mu}m, driving local temperatures above 1600 K with subsequent cooling between pulses. Scanning electron microscopy identifies three characteristic morphologies correspond- ing to different thermal histories: sputter streaks, prismatic crystals, and disordered microcrystals. Our results demonstrate that grain-boundary formation creates a feedback mechanism that accelerates damage in later pulses. This work establishes a method- ology for studying radiation damage across multiple length scales and provides insight into topological insulator stability under extreme conditions

cond-mat.mtrl-sci

Simultaneous Bright- and Dark-Field X-ray Microscopy at X-ray Free Electron Lasers

The structures, strain fields, and defect distributions in solid materials underlie the mechanical and physical properties across numerous applications. Many modern microstructural microscopy tools characterize crystal grains, domains and defects required to map lattice distortions or deformation, but are limited to studies of the (near) surface. Generally speaking, such tools cannot probe the structural dynamics in a way that is representative of bulk behavior. Synchrotron X-ray diffraction based imaging has long mapped the deeply embedded structural elements, and with enhanced resolution, Dark Field X-ray Microscopy (DFXM) can now map those features with the requisite nm-resolution. However, these techniques still suffer from the required integration times due to limitations from the source and optics. This work extends DFXM to X-ray free electron lasers, showing how the $10^{12}$ photons per pulse available at these sources offer structural characterization down to 100 fs resolution (orders of magnitude faster than current synchrotron images). We introduce the XFEL DFXM setup with simultaneous bright field microscopy to probe density changes within the same volume. This work presents a comprehensive guide to the multi-modal ultrafast high-resolution X-ray microscope that we constructed and tested at two XFELs, and shows initial data demonstrating two timing strategies to study associated reversible or irreversible lattice dynamics.

cond-mat.mtrl-sci

In-Situ Visualization of Long-Range Defect Interactions at the Edge of Melting

Connecting a bulk material's microscopic defects to its macroscopic properties is an age-old problem in materials science. Long-range interactions between dislocations (line defects) are known to play a key role in how materials deform or melt, but we lack the tools to connect these dynamics to the macroscopic properties. We introduce time-resolved dark-field X-ray microscopy to directly visualize how dislocations move and interact over hundreds of micrometers, deep inside bulk aluminum. With real-time movies, we reveal the thermally-activated motion and interactions of dislocations that comprise a boundary, and show how weakened binding forces inhomogeneously destabilize the structure at 99% of the melting temperature. Connecting dynamics of the microstructure to its stability, we provide important opportunities to guide and validate multiscale models that are yet untested.

cond-mat.mtrl-sci

Methods to Quantify Dislocation Behavior with Dark-field X-ray Microscopy Timescans of Single-Crystal Aluminum

Crystal defects play a large role in how materials respond to their surroundings, yet there are many uncertainties in how extended defects form, move, and interact deep beneath a material's surface. A newly developed imaging diagnostic, dark-field X-ray microscopy (DFXM) can now visualize the behavior of line defects, known as dislocations, in materials under varying conditions. DFXM images visualize dislocations by imaging the very subtle long-range distortions in the material's crystal lattice, which produce a characteristic adjoined pair of bright and dark regions. Full analysis of how these dislocations evolve can be used to refine material models, however, it requires quantitative characterization of the statistics of their shape, position and motion. In this paper, we present a semi-automated approach to effectively isolate, track, and quantify the behavior of dislocations as composite objects. This analysis drives the statistical characterization of the defects, to include dislocation velocity and orientation in the crystal, for example, and is demonstrated on DFXM images measuring the evolution of defects at 98$\%$ of the melting temperature for single-crystal aluminum, collected at the European Synchrotron Radiation Facility.

physics.data-an

Approximate One-Dimensional Models for Monoenergetic Neutral Particle Transport in Ducts with Wall Migration

The problem of monoenergetic neutral particle transport in a duct, where particles travel inside the duct walls, is treated using an approximate one-dimensional model. The one-dimensional model uses three-basis functions, as part of a previously derived weighted-residual procedure, to account for the geometry of particle transport in a duct system (where particle migration into the walls is not considered). Our model introduces two stochastic parameters to account for particle-wall interactions: an albedo approximation yielding the fraction of particles that return to the duct after striking the walls, and a mean-distance travelled in the walls transverse to the duct by particles that re-enter the duct. Our model produces a set of three transport equations with a non-local scattering kernel. We solve these equations using discrete ordinates with source iteration. Numerical results for the reflection and transmission probabilities of neutron transport in ducts of circular cross section are compared to Monte Carlo results computed using the MCNP code.

physics.comp-ph

Propagation of charged particle waves in a uniform magnetic field

This paper considers the probability density and current distributions generated by a point-like, isotropic source of monoenergetic charges embedded into a uniform magnetic field environment. Electron sources of this kind have been realized in recent photodetachment microscopy experiments. Unlike the total photocurrent cross section, which is largely understood, the spatial profiles of charge and current emitted by the source display an unexpected hierarchy of complex patterns, even though the distributions, apart from scaling, depend only on a single physical parameter. We examine the electron dynamics both by solving the quantum problem, i. e., finding the energy Green function, and from a semiclassical perspective based on the simple cyclotron orbits followed by the electron. Simulations suggest that the semiclassical method, which involves here interference between an infinite set of paths, faithfully reproduces the features observed in the quantum solution, even in extreme circumstances, and lends itself to an interpretation of some (though not all) of the rich structure exhibited in this simple problem.

quant-ph