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Aron W. Cummings

Publications and source records attributed to Aron W. Cummings.

At least 19 recordsLinked to original sources

The Critical Role of Itinerant Contributions to Orbital Angular Momentum Relaxation and Dynamics

Orbital angular momentum (OAM) is a promising degree of freedom for low-dissipation transport and magnetization control, yet its relaxation mechanisms remain controversial, with atomcentered approximations (ACA) predicting much shorter OAM diffusion lengths than experiments. We address this discrepancy using first-principles Lindbladian density-matrix dynamics, capturing electron-phonon scattering and itinerant OAM contributions, together with a first-principles parameterized tight-binding approach that separates the ACA and itinerant components. In MoS2,a strong-spin-orbit-coupling (SOC) system, orbital relaxation is multi-timescale, with fast intervalley redistribution followed by slower decay coupled to the spin. In weak-SOC silicene, spin and orbital dynamics decouple; an electric field tunes spin relaxation while leaving orbital lifetimes unchanged. In both materials, ACA orbital lifetimes are at least one order of magnitude shorter than itinerant ones, due to ultrafast precession driven by crystal-field splitting, absent from the itinerant component. These results demonstrate that going beyond atom-centered models is essential for describing orbital relaxation and diffusion.

cond-mat.mtrl-sci↗

Spin lifetime anisotropy in graphene induced by the SiO2 interface

Understanding how common dielectric substrates influence the spin transport properties of graphene is essential for advancing graphene-based spintronic technologies. Here we use a comprehensive set of numerical simulations to reveal how a SiO$_2$ substrate modifies the spin texture and governs spin relaxation in graphene. Using first-principles density matrix dynamics simulations, as well as tight-binding (TB) transport simulations, we quantify the effects of electron-phonon scattering, impurity scattering, and electrostatic disorder on the spin relaxation process. We find that a 2D SiO$_2$ substrate induces a predominantly Rashba-type helical spin texture in graphene, leading to a spin lifetime anisotropy of 1/2. Meanwhile, bulk SiO$_2$ breaks in-plane symmetry in graphene, leading to anisotropic in-plane and out-of-plane components in the spin texture, which we capture with a newly-developed TB model of graphene. Transport simulations under realistic disorder conditions reveal a spin lifetime anisotropy between 0.5 and 1, similar to what is seen in measurements of graphene spin valves on a SiO$_2$ substrate. Our results reveal a more complex picture of spin relaxation at the ubiquitous graphene/SiO$_2$ interface, beyond the standard Rashba model, providing critical insight for interpreting experiments and guiding substrate engineering for graphene spintronics.

cond-mat.mes-hall↗

Graphene-based Photodetector with Engineered Hot Carrier Cooling Dynamics

Graphene has emerged as a promising material for integration into silicon photonics, owing to its ultrafast and broadband photoresponse without the need for an external bias voltage. This photoresponse relies on the photo-thermoelectric effect created by hot carriers. A key factor underlying the performance of graphene photodetectors is the cooling dynamics of these hot carriers. In this work, we engineer these dynamics in a WSe2-graphene-WSe2 waveguide-integrated photodetector. In particular, by introducing proximity screening by a nearby graphite layer to this structure, we prolong the hot-carrier cooling time, leading to an enhanced photoresponse. We characterize the cooling dynamics under continuous-wave laser excitation by employing a photomixing technique, revealing an increase in the cooling time by up to a factor of four. Direct photoresponse measurements show that the internal photoresponsivity improves by approximately 50%. Together, these results demonstrate the potential of proximity screening to enhance the performance of graphene-based photodetectors on an integrated photonics platform.

cond-mat.mes-hall↗

Real-Space Approach to Light-Induced Hall Transport in Disordered Materials

We introduce a linear-scaling real-space methodology to compute time-resolved electrical responses of materials driven far from equilibrium, with energy relaxation and disorder treated on equal footing. Applying this approach to gapped monolayer and AB-stacked (Bernal) bilayer graphene, when driven by a circularly polarized optical pulse, we observe the generation/suppression of a finite Hall conductivity when the system is trivial/topological. This Hall signal oscillates during optical driving and remains sizable after the light is switched off before relaxing toward equilibrium. Remarkably, this dynamical Hall response is robust in the presence of realistic descriptions of disorder, suggesting that disorder and relaxation dynamics can be leveraged as design parameters rather than as limitations. More broadly, our new methodology enables the investigation of electrical responses in driven, complex disordered quantum materials and highlights how engineered energy-transfer pathways can enable ultrafast optoelectronic functionality.

cond-mat.mes-hall↗

Dielectric control of ultrafast carrier dynamics and transport in graphene

Understanding the ultrafast dynamics of photoexcited charges in graphene is essential, as the microscopic mechanisms underlying these dynamics determine many of graphene's optical, optothermal, and optoelectronic properties. These are crucial properties for many functionalities and devices enabled by graphene, such as high-speed photodectors. Therefore, beyond scientific understanding, it is highly desirable to control ultrafast carrier dynamics for practical applications. Here, we establish this control by engineering the dielectric environment of graphene, thereby regulating both heating and cooling dynamics without altering the Fermi energy, optical power, or ambient temperature. By combining optical pump-terahertz probe experiments with theoretical calculations, we show that dielectric screening suppresses carrier-carrier interactions and slows the dynamics. In particular, reduced carrier-carrier scattering delays the formation of a quasi-equilibrium hot electron distribution, thus slowing carrier heating. It also slows carrier cooling because re-thermalization after optical-phonon emission depends on the same interactions. The enhanced screening further reduces the energy of electron-hole puddles, thereby increasing charge mobility and the Seebeck coefficient. This ability to externally control internal graphene dynamics and transport properties enables the optimization of device performance, such as the sensitivity of photodetectors for data communication and wireless communication applications.

cond-mat.mes-hall↗

Real-Time Out-of-Equilibrium Quantum Dynamics in Disordered Materials

We report a linear-scaling numerical method for exploring nonequilibrium electron dynamics in systems of arbitrary complexity. Based on the Chebyshev expansion of the time evolution of the single-particle density matrix, the method gives access to nonperturbative excitation and relaxation phenomena in models of disordered materials with sizes on the experimental scale. After validating the method by applying it to saturable optical absorption in clean graphene, we uncover that disorder can enhance absorption in graphene and that the interplay between light, anisotropy, and disorder in nanoporous graphene might be appealing for sensing applications. Beyond the optical properties of graphene-like materials, the method can be applied to a wide range of large-area materials and systems with arbitrary descriptions of defects and disorder.

cond-mat.mes-hall↗

Quantum transport in nitrogen-doped nanoporous graphenes

Bottom-up on-surface synthesized nanoporous graphenes (NPGs), realized as 2D arrays of laterally covalently bonded $π$-conjugated graphene nanoribbons (GNRs), are a family of carbon nanomaterials that are receiving increasing attention for nanoelectronics and biosensing. Recently, a so-called hybrid-NPG (hNPG) is synthesized, featuring an alternating sequence of doped and non-doped GNRs, resulting in a band staggering effect in its electronic structure. Such a feature is appealing for photo-catalysis, photovoltaics and even carbon nanocircuitry. However, to date, little is known about the transport properties of hNPG and its derivatives, which is key for most applications. Here, via Green's functions simulations, the quantum transport properties of hNPGs are studied. It is found that injected carriers in hNPG spread laterally through a number of GNRs, though such spreading may take place exclusively through GNRs of one type (doped or non-doped). A simple model is proposed to discern the key parameters determining the electronic propagation in hNPGs and explore alternative hNPG designs to control the spreading/confinement and anisotropy of charge transport in these systems. For one such design, it is found that it is possible to send directed electric signals with sub-nanometer precision for as long as one micrometer - a result first reported for any NPG.

cond-mat.mes-hall↗

Proximity Effects Between the Graphene Quasicrystal and Magic-Angle Twisted Bilayer Graphene

We present a numerical study of three-layer graphene heterostructures in which the layers are twisted by the magic angle ($\sim$1.1$^\circ$) or by $\sim$$30^\circ$ to form a graphene quasicrystal. The heterostacks are described using realistic structural relaxations and tight-binding Hamiltonians, and their transport properties are computed for both pristine and disordered systems containing up to $\sim$8 million atoms. Owing to the weak interlayer coupling, we resolve the hybridization between magic-angle flat bands and quasicrystalline states, which are modified in distinct ways across low- and high-energy windows, revealing a new hybrid electronic regime to explore.

cond-mat.mes-hall↗

Semiconductor Meta-Graphene and Valleytronics

Nano-patterned semiconductor interfaces offer a versatile platform for creating quantum metamaterials and exploring novel electronic phenomena. In this study, we illustrate this concept using artificial graphene--a metamaterial featuring distinctive properties including Dirac and saddle points. We demonstrate that introducing additional nano-patterning can open a Dirac band gap, giving rise to what we term artificial hexagonal boron nitride (AhBN). The calculated valley Chern number of AhBN indicates the presence of topological valley Hall states confined to Dirac-gap domain walls. A key question is whether these one-dimensional edge states are topologically protected against disorder, given their vulnerability to Anderson localization. To this end, we perform band structure and electronic transport simulations under experimentally relevant disorder, including charge puddles and geometric imperfections. Our results reveal the resilience of the domain wall states against typical experimental disorder, particularly while the AhBN band gap remains open. The localization length along the domain wall can reach several microns--several times longer than the bulk electron mean free path--even though the number of bulk transport channels is greater. To enhance the effectiveness of the low-dissipation domain wall channel, we propose ribbon geometries with a large length-to-width ratio. These findings underscore both the potential and challenges of AhBN for low-energy, power-efficient microelectronic applications.

cond-mat.mes-hall↗

Spin Polarization driven by Itinerant Orbital Angular Momentum in van der Waals Heterostructures

We report on the possibility of manipulating magnetic materials by using itinerant orbital angular momentum to produce out-of-plane spin polarization in van der Waals heterostructures. Employing a real-space formulation of the OAM operator within linear response theory, we demonstrate that in low-symmetry transition-metal dichalcogenide (TMD) monolayers, such as 1$T{}_d$-MoTe2, the current-induced itinerant OAM exceeds the spin response by three orders of magnitude. When TMDs are coupled with ferromagnets with negligible intrinsic orbital responses, the itinerant OAM generated by the orbital Rashba-Edelstein effect transfers across the interface, generating spin densities capable of inducing magnetization dynamics inside the ferromagnet. Our findings highlight the previously overlooked role of itinerant OAM in the generation of out-of-plane spin densities, which serves as an emerging mechanism for efficient electrical control of magnetization in low-power, ultracompact storage devices.

cond-mat.mes-hall↗

Scaling of the Integrated Quantum Metric in Disordered Topological Phases

We report a study of a disorder-dependent real-space representation of the quantum geometry in topological systems. Thanks to the development of an efficient linear-scaling numerical methodology based on the kernel polynomial method, we can explore nontrivial behavior of the integrated quantum metric and Chern number in disordered systems with sizes reaching the experimental scale. We illustrate this approach in the disordered Haldane model, examining the impact of Anderson disorder and vacancies on the trivial and topological phases captured by this model.

cond-mat.dis-nn↗

Disorder-Induced Delocalization in Magic-Angle Twisted Bilayer Graphene

Flat bands in moiré systems are exciting new playgrounds for the generation and study of exotic many-body physics phenomena in low-dimensional materials. Such physics is attributed to the vanishing kinetic energy and strong spatial localization of the flat-band states. Here we use numerical simulations to examine the electronic transport properties of such flat bands in magic-angle twisted bilayer graphene in the presence of disorder. We find that while a conventional downscaling of the mean free path with increasing disorder strength occurs at higher energies, in the flat bands the mean free path can actually increase with increasing disorder strength.This phenomenon is also captured by the disorder-dependent quantum metric, which is directly linked to the ground state localization.This disorder-induced delocalization suggests that weak disorder may have a strong impact on the exotic physics of magic-angle bilayer graphene and other related moiré systems.

cond-mat.mes-hall↗

Upper limit of spin relaxation in suspended graphene

We use a combination of molecular dynamics and quantum transport simulations to investigate the upper limit of spin transport in suspended graphene. We find that thermally-induced atomic-scale corrugations are the dominant factor, limiting spin lifetimes to ~10 ns by inducing a strongly-varying local spin-orbit coupling. These extremely short-range corrugations appear even when the height profile appears to be smooth, suggesting they may be present in any graphene device. We discuss our results in the context of experiments, and briefly consider approaches to suppress these short-range corrugations and further enhance spin lifetimes in graphene-based spin devices.

cond-mat.mes-hall↗

Robust quantum engineering of current flow in carbon nanostructures at room temperature

Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI), long studied in the field of single-molecule electronics, has been proposed as the most effective way to achieve such control with molecular-scale precision. However, for practical applications, it is essential that such QI-engineering remains effective near or above room temperature. To assess this important point, here we combine large-scale molecular dynamics simulations and quantum transport calculations and focus our study on NPGs formed as arrays of laterally bonded GNRs. By considering various NPGs with different inter-GNR chemical connections we disentangle the different factors determining electronic transport in these carbon nanomaterials at 300 K. Our findings unequivocally demonstrate that QI survives at room temperature, with thermal vibrations weakly restricting current flow along GNRs while completely blocking transport across GNRs. Our results thus pave the way towards the future realization of QI-engineered carbon nanocircuitry operating at room temperature, which is a fundamental step towards carbon-based nanoelectronics and quantum technologies.

cond-mat.mes-hall↗

Resilient Intraparticle Entanglement and its Manifestation in Spin Dynamics of Disordered Dirac Materials

Topological quantum matter exhibits novel transport phenomena driven by entanglement between internal degrees of freedom, as for instance generated by spin-orbit coupling effects. Here we report on a direct connection between the mechanism driving spin relaxation and the intertwined dynamics between spin and sublattice degrees of freedom in disordered graphene. Beyond having a direct observable consequence, such intraparticle entanglement is shown to be resilient to disorder, pointing towards a novel resource for quantum information processing.

cond-mat.mes-hall↗

Giant Spin Transport Anisotropy in Magnetic Topological Insulators

We report on exceptionally long spin transport and giant spin lifetime anisotropy in the gapped surface states of three-dimensional (3D) magnetic topological insulators (MTIs). We examine the properties of these states using the Fu-Kane-Mele Hamiltonian in presence of a magnetic exchange field. The corresponding spin textures of surface states, which are well reproduced by an effective two-band model, hint at a considerable enhancement of the lifetime of out-of-plane spins compared to in-plane spins. This is confirmed by large-scale spin transport simulations for 3D MTIs with disorder. The energy dependence of the spin lifetime anisotropy arises directly from the nontrivial spin texture of the surface states, and is correlated with the onset of the quantum anomalous Hall phase. Our findings suggest novel spin filtering capabilities of the gapped surface MTI states, which could be explored by Hanle spin precession measurements.

cond-mat.mes-hall↗

All-carbon approach to inducing electrical and optical anisotropy in graphene

Owing to its array of unique properties, graphene is a promising material for a wide variety of applications. Being two-dimensional, the properties of graphene are also easily tuned via proximity to other materials. In this work, we investigate the possibility of inducing electrical and optical anisotropy in graphene by interfacing it with other anisotropic carbon systems, including nanoporous graphene and arrays of graphene nanoribbons. We find that such materials do indeed induce such anisotropy in graphene, while also preserving the unique properties offered by graphene's Dirac band structure, namely its superior charge transport and long-wavelength optical absorption. The optical anisotropy makes such heterostructures interesting for their use in applications related to long-wavelength polarimetry, while the electrical anisotropy may be valuable for enhancing the performance of graphene photothermoelectric detectors.

cond-mat.mes-hall↗

Optimizing the photothermoelectric effect in graphene

Among its many uses, graphene shows significant promise for optical and optoelectronic applications. In particular, devices based on the photothermoelectric effect (PTE) in graphene can offer a strong and fast photoresponse with high signal-to-noise ratio while consuming minimal power. In this work we discuss how to optimize the performance of graphene PTE photodetectors by tuning the light confinement, device geometry, and material quality. This study should prove useful for the design of devices using the PTE in graphene, with applications including optical sensing, data communications, multi-gas sensing, and others.

cond-mat.mes-hall↗