arXiv subjects

Artur Erbe

Publications and source records attributed to Artur Erbe.

At least 19 recordsLinked to original sources

arXiv2025

DNA mold-based fabrication of continuous silver nanostructures

Bottom-up fabrication of inorganic nanostructures is emerging as an alternative to classical top-down approaches, offering precise nanometer-scale control at relatively low cost and effort. In particular, DNA nanostructures provide versatile scaffolds for directly templating the growth of metal structures. Previously, a DNA mold-based method for metal nanostructure synthesis has been established that supports a modular structure design and a high control over the structure formation. So far, this method was limited to the growth of gold and palladium nanostructures. Here, we report the successful adaptation of the DNA mold-based fabrication method to produce continuous silver nanowires. By optimizing reagent concentrations and applying gentle thermal annealing, we obtain continuous wire structures of several hundred nanometer length, overcoming limitations in anisotropic growth. Despite the strong interaction of silver ions with DNA, we can control the growth without increasing the complexity of our approach. Our structures are not oxidized yet they did not exhibit conductivity. This work demonstrates the versatility of DNA-templated metallization and opens new opportunities for constructing self-assembled hybrid nanostructures with controlled shape and composition.

cond-mat.mtrl-sci↗

arXiv2025

Nanoscale Charge Transport in Au@PANI Assemblies: Bulk-like Films and Linear Assemblies

Hybrid nanostructures from metal nanoparticles equipped with conducting polymer shells are of great interest for use as functional materials in sensing and optoelectronics, as well as for ink-deposited conductors. Here, we investigate the charge transport mechanism of nanostructures composed of gold nanoparticles coated with a polyaniline shell (Au@PANI). In particular, we focus on how geometry influences the charge transport behavior. Highly ordered linear assemblies of Au@PANI nanoparticles were fabricated using template-assisted assembly, while bulk-like films were obtained via drop-casting. Temperature-dependent transport measurements were analyzed using established conductance models. Linear assemblies exhibit more localized transport, characterized by variable-range hopping (VRH) and thermally assisted tunneling (TAT), whereas bulk-like films show more delocalized transport, dominated by Arrhenius-type and thermionic conduction. These findings highlight the critical role of geometry, also due to its effect on electrical field strength in determining charge transport mechanisms in nanoparticle-based hybrid systems.

physics.app-ph↗

arXiv2025

Intrinsic Resistive Switching in Microtubule-Templated Gold Nanowires for Reconfigurable Nanoelectronics

The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory, has been widely demonstrated in oxides, semiconductors, and nanocomposites, but not in pure one-dimensional metallic systems. Here, we report the first electrical characterization of gold nanowires (AuNWs) synthesized within the lumen of functionalized microtubules. Structural analyses confirm continuous metallic wires with local compositional inhomogeneities. Electrical measurements reveal three distinct conduction behaviours and abrupt, reversible resistance transitions under applied bias, consistent with defect-driven electromigration. Voltage pulsing enables active and reproducible modulation of resistance states without loss of metallic conduction, establishing a new RS mechanism intrinsic to pure metallic nanowires. Owing to their high aspect ratio, lateral geometry, and CMOS-compatible processing, microtubule-templated AuNWs provide a versatile platform for reconfigurable interconnects and neuromorphic device architectures.

cond-mat.soft↗

arXiv2025

Molecular Cross-linking of MXenes: Tunable Interfaces and Chemiresistive Sensing

MXenes, a family of 2D transition metal compounds, have emerged as promising materials due to their unique electronic properties and tunable surface chemistry. However, the translation of these nanoscale properties into macroscopic devices is constrained by suitable cross-linking strategies that enable both processability and controlled inter-flake charge transport. Herein, we demonstrate the tunability of interfaces and the inter-layer spacing between Ti$_3$C$_2$T$_x$ MXene flakes through molecular cross-linking with homologous diamines. Oleylamine was first used to stabilize MXenes in chloroform, followed by diamine-mediated cross-linking to tune precisely the interlayer spacing. Grazing incidence X-ray scattering (GIXRD/GIWAXS) confirmed the correlation between ligand chain length and inter-layer spacing, which was further supported by Density Functional Theory (DFT) calculations. Furthermore, we investigated the charge transport properties of thin films consisting of these diamine-crosslinked Ti$_3$C$_2$T$_x$ MXenes and observed a strong dependence of the conductivity on the interlayer spacing. The dominating charge transport mechanism is variable range hopping (VRH) in accordance with the structure analysis of the films. Finally, we probed chemiresistive vapor sensing in MXene composites, observing pronounced water sensitivity and selectivity, highlighting their potential for use in humidity sensors. Insights into molecular cross-linking and its impact on charge transport open avenues for next-generation MXene-based electronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators

Hybrid quantum devices enable novel functionalities by combining the benefits of different subsystems. Particularly, point defects in nanomechanical resonators made of diamond or silicon carbide (SiC) have been proposed for precise magnetic field sensing and as versatile quantum transducers. However, the realization of a hybrid system may involve tradeoffs in the performance of the constituent subsystems. In a spin-mechanical system, the mechanical properties of the resonator may suffer from the presence of engineered defects in the crystal lattice. This may severely restrict the performance of the resulting device and needs to be carefully explored. Here, we focus on the impact of defects on high Q nanomechanical string resonators made of pre-stressed 3C-SiC grown on Si(111). We use helium ion implantation to create point defects and study their accumulated effect on the mechanical performance. Using Euler-Bernoulli beam theory, we present a method to determine Young's modulus and the pre-stress of the strings. We find that Young's modulus is not modified by implantation. Under implantation doses relevant for single defect or defect ensemble generation, both tensile stress and damping rate also remain unaltered. For higher implantation dose, both exhibit a characteristic change.

cond-mat.mes-hall↗

arXiv2024

Probing the band splitting near the $Γ$ point in the van der Waals magnetic semiconductor CrSBr

This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.

cond-mat.mes-hall↗

arXiv2024

Lane formation in gravitationally driven colloid mixtures consisting of up to three different particle sizes

Brownian dynamics simulations are utilized to study segregation phenomena far from thermodynamic equilibrium. In the present study, we expand upon the analysis of binary colloid mixtures and additionally introduce a third particle species to further our understanding of colloidal systems. Gravitationally driven, spherical colloids immersed in an implicit solvent are confined in two-dimensional linear microchannels. The interaction between the colloids is modeled by the Weeks-Chandler-Andersen potential, and the confinement of the colloids is realized by hard walls based on the solution of the Smoluchowski equation in half space. In binary and ternary colloidal systems, a difference in the driving force is achieved by differing colloid sizes, but fixed mass density. We observe for both the binary and ternary systems that a driving force difference induces a nonequilibrium phase transition to lanes. For ternary systems, we study the tendency of lane formation in dependence of the diameter of the medium-sized colloids. Here, we find a sweetspot for lane formation in ternary systems. Furthermore, we study the interaction of two differently sized colloids at the channel walls. Recently, we observed that driven large colloids push smaller colloids to the walls. This results in small particle lanes at the walls at early simulation times. In this work, we additionally find that thin lanes are unstable and dissolve over very long time frames. Furthermore, we observe a connection between lane formation and the nonuniform distribution of particles along the channel length. This nonuniform distribution occurs either alongside lane formation or in shared lanes (i.e. lanes consisting of two colloid types).

cond-mat.soft↗

arXiv2023

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.

physics.optics↗

arXiv2022

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.

cond-mat.mtrl-sci↗

arXiv2022

Terahertz control of photoluminescence emission in few-layer InSe

A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators.

cond-mat.mtrl-sci↗

arXiv2021

A photonic platform hosting telecom photon emitters in silicon

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.

physics.optics↗

arXiv2021

Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure

Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is important to enhance the trion emission and its stability. In this study, we construct a MoSe2/FePS3 van der Waals heterostructure (vdWH) with type-I band alignment, which allows for carriers injection from FePS3 to MoSe2. At low temperatures, the neutral exciton (X0) emission in this vdWH is almost completely suppressed. The ITrion/Ix0 intensity ratio increases from 0.44 in a single MoSe2 monolayer to 20 in this heterostructure with the trion charging state changing from negative in the monolayer to positive in the heterostructure. The optical pumping with circularly polarized light shows a 14% polarization for the trion emission in MoSe2/FePS3. Moreover, forming such type-I vdWH also gives rise to a 20-fold enhancement of the room temperature photoluminescence from monolayer MoSe2. Our results demonstrate a novel approach to convert excitons to trions in monolayer 2D TMDCs via interlayer doping effect using type-I band alignment in vdWH.

cond-mat.mtrl-sci↗

arXiv2021

Local and nonlocal spin Seebeck effect in lateral Pt-$\mathrm{Cr_2O_3}$-Pt devices at low temperatures

We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic $α$-$\mathrm{Cr_2O_3}$ and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector-detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our $α$-$\mathrm{Cr_2O_3}$ films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicates that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport.

cond-mat.mes-hall↗

arXiv2020

Climbing two hills is faster than one: collective barrier-crossing by colloids driven through a microchannel

Ohm's law is one of the most central transport rules stating that the total resistance of sequential single resistances is additive. While this rule is most commonly applied to electronic circuits, it also applies to other transport phenomena such as the flow of colloids or nanoparticles through channels containing multiple obstacles, as long as these obstacles are sufficiently far apart. Here we explore the breakdown of Ohm's law for fluids of repulsive colloids driven over two energetic barriers in a microchannel, using real-space microscopy experiments, particle-resolved simulations, and dynamical density functional theory. If the barrier separation is comparable to the particle correlation length, the resistance is highly non-additive, such that the resistance added by the second barrier can be significantly higher or lower than that of the first. Surprisingly, in some cases the second barrier can even add a {\it negative} resistance, such that two identical barriers are easier to cross than a single one. We explain this counterintuitive observation in terms of the structuring of particles trapped between the barriers.

cond-mat.soft↗

arXiv2020

Autocorrected Off-axis Holography of 2D Materials

The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are the gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the 2D material. We demonstrate these features at the example of h-BN, at which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges.

cond-mat.mes-hall↗

arXiv2020

Photoluminescence dynamics in few-layer InSe

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations.

cond-mat.mes-hall↗

arXiv2019

Focused ion beam modification of non-local magnon-based transport in yttrium iron garnet/platinum heterostructures

We study the impact of Ga ion exposure on the local and non-local magnetotransport response in heterostructures of the ferrimagnetic insulator yttrium iron garnet and platinum. In particular, we cut the yttrium iron garnet layer in between two electrically separated wires of platinum using a Ga ion beam, and study the ensuing changes in the magnetoresistive response. We find that the non-local magnetoresistance signal vanishes when the yttrium iron garnet film between the Pt wires is fully cut, although the local spin Hall magnetoresistance signal remains finite. This observation corroborates the notion that pure spin currents carried by magnons are crucial for the non-local magnetotransport effects observed in magnetic insulator/metal nanostructures.

cond-mat.mes-hall↗

arXiv2018

CMOS-compatible controlled hyperdoping of silicon nanowires

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for Si-based short-wavelength infrared photodetectors.[3-5] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells,[6-9] but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, we show a CMOS-compatible technique based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom-up template-assisted solid phase recrystallization of the nanowires with the use of millisecond-flash lamp annealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have a room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device.

cond-mat.mtrl-sci↗