arXiv subjects

Artur Lozovoi

Publications and source records attributed to Artur Lozovoi.

14 recordsLinked to original sources

arXiv2025

High-quality nanostructured diamond membranes for nanoscale quantum sensing

Deploying nitrogen vacancy (NV) centers in diamond as nanoscale quantum sensors for condensed matter and materials physics requires placing the NV centers close to the sensing target. One solution is to fabricate diamond nanostructures and integrate them with materials and devices. However, diamond etching and ion milling can introduce subsurface damage and surface defects that degrade the charge stability and spin coherence of NV centers near the surface. Here we report a procedure for fabricating low-damage nanostructured diamond membranes, and we show that this fabrication scheme preserves the optical and spin properties of state-of-the-art shallow NV center quantum sensors, within nanometers of the diamond surface, while providing significant photonic enhancement. Furthermore, we demonstrate a pick-and-place transfer method, which enables integration with diverse sensing targets.

cond-mat.mes-hall↗

arXiv2025

Beyond ensemble averaging: Parallelized single-shot readout of hole capture in diamond

Understanding the generation, transport and capture of charge carriers in semiconductors is of fundamental technological importance. However, the ensemble measurement techniques ubiquitous in electronics offer limited insight into the nanoscale environment that is crucial to the operation of modern quantum-electronic devices. Here, we combine widefield optical microscopy with precision spectroscopy to examine the capture of photogenerated holes by negatively charged nitrogen vacancy (NV-) centers in diamond. Simultaneous single-shot charge readout over hundreds of individual NVs allows us to resolve the roles of ionized impurities, reveal the formation of space charges fields, and monitor the thermalization of hot photo-carriers during diffusion. We measure effective NV- hole capture radii in excess of 0.2 um, a value approaching the Onsager limit and made possible here thanks to the near-complete neutralization of coexisting charge traps. These results establish a new platform for resolving charge dynamics beyond ensemble averages, with direct relevance to nanoscale electronics and quantum devices.

cond-mat.mes-hall↗

arXiv2025

High-Efficiency, High-Fidelity Charge Initialization of Shallow Nitrogen Vacancy Centers in Diamond

Nitrogen vacancy (NV) centers in diamond exhibit long spin coherence times, optical initialization, and optical spin readout under ambient conditions, making them excellent quantum sensors. However, the conventional scheme for charge state initialization based on off-resonant green excitation results in significant state preparation errors, typically around 30%. One method for improving charge state initialization fidelity is to use multicolor excitation, which has been demonstrated to achieve a near-unity preparation fidelity for bulk NV centers by using a few milliseconds of near-infrared (5 mW) and green (10 μW) excitation. The translation of such schemes to NV centers near the diamond surface with higher efficiency optical pumping would enable myriad tasks in nanoscale sensing. Here, we demonstrate a protocol for efficient charge initialization of shallow NV centers between 5 nm and 15 nm from the diamond surface. By carefully studying the charge dynamics of shallow NV centers, we identify a region of parameter space that allows for near-unity (95%) charge initialization within 300 μs of near-infrared (1 mW) and green (10 μW) excitation. The time to 90% charge initialization can be as fast as 10 μs for 4 mW of near-infrared and 39 μW of green illumination. This fast, efficient charge initialization protocol will enable nanoscale sensing applications where state preparation errors currently prohibit scaling, such as measuring higher-order multi-point correlators.

cond-mat.mtrl-sci↗

arXiv2024

Quantum Noise Spectroscopy of Criticality in an Atomically Thin Magnet

Dynamic critical fluctuations in magnetic materials encode important information about magnetic ordering in the associated critical exponents. Using nitrogen-vacancy centers in diamond, we implement $T_2$ (spin-decoherence) noise magnetometry to study critical dynamics in a 2D Van der Waals magnet CrSBr. By analyzing NV decoherence on time scales approaching the characteristic correlation time $τ_c$ of critical fluctuations, we extract the critical exponent $ν$ for the correlation length. Our result deviates from the Ising prediction and highlights the role of long-range dipolar interactions in 2D CrSBr. Furthermore, analyzing the divergence of the correlation length suggests the possibility of 2D-XY criticality in CrSBr in a temperature window near $T_C$ where static magnetic domains are absent. Our work provides a first demonstration of $T_2$ noise magnetometry to quantitatively analyze critical scaling behavior in 2D materials.

cond-mat.mes-hall↗

arXiv2024

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the absence of appropriate multiscale models capable of accurately representing the atomic properties of these defects and their impact on device performance. Here, we present a semi-\textit{ab initio} method for modeling the bound states of deep defects in semiconductor quantum technologies, applied to the negatively charged nitrogen vacancy (NV$^-$) center in diamond. We employ density functional theory calculations to construct accurate potentials for an effective mass model, which allow us to unveil the structure of the bound hole states. We develop a model to calculate the nonradiative capture cross sections, which agrees with experiment within one order of magnitude. Finally, we present our attempt at constructing the photoionization spectrum of NV$^0\rightarrow$ NV$^-$ + bound hole, showing that the electronic transitions of the bound holes can be distinguished from phonon sidebands. This paper offers a practical and efficient solution to a long-standing challenge in understanding the charge dynamics of deep defects.

cond-mat.mes-hall↗

arXiv2023

Dynamic-nuclear-polarization-weighted spectroscopy of multi-spin electronic-nuclear clusters

Nuclear spins and paramagnetic centers in a solid randomly group to form clusters featuring nearly-degenerate, hybrid states whose dynamics are central to processes involving nuclear spin-lattice relaxation and diffusion. Their characterization, however, has proven notoriously difficult mostly due to their relative isolation and comparatively low concentration. Here, we combine field-cycling experiments, optical spin pumping, and variable radio-frequency (RF) excitation to probe transitions between hybrid multi-spin states formed by strongly coupled electronic and nuclear spins in diamond. Leveraging bulk nuclei as a collective time-integrating sensor, we probe the response of these spin clusters as we simultaneously vary the applied magnetic field and RF excitation to reconstruct multi-dimensional spectra. We uncover complex nuclear polarization patterns of alternating sign that we qualitatively capture through analytical and numerical modeling. Our results unambiguously expose the impact that strongly-hyperfine-coupled nuclei can have on the spin dynamics of the crystal, and inform future routes to spin cluster control and detection.

cond-mat.mes-hall↗

arXiv2023

Detection and modeling of hole capture by single point defects under variable electric fields

Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond.

cond-mat.mes-hall↗

arXiv2022

Room-temperature photo-chromism of silicon vacancy centers in CVD diamond

The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.

cond-mat.mtrl-sci↗

arXiv2022

Spin dynamics of a solid-state qubit in proximity to a superconductor

A broad effort is underway to understand and harness the interaction between superconductors and spin-active color centers with an eye on the realization of hybrid quantum devices and novel imaging modalities of superconducting materials. Most work, however, overlooks the complex interplay between either system and the environment created by the color center host. Here we use an all-diamond scanning probe to investigate the spin dynamics of a single nitrogen-vacancy (NV) center proximal to a high-critical-temperature superconducting film in the presence of a weak magnetic field. We find that the presence of the superconductor increases the NV spin coherence lifetime, a phenomenon we tentatively rationalize as a change in the electric noise due to a superconductor-induced redistribution of charge carriers near the NV site. We build on these findings to demonstrate transverse-relaxation-time-weighted imaging of the superconductor film. These results shed light on the complex surface dynamics governing the spin coherence of shallow NVs while simultaneously paving the route to new forms of noise spectroscopy and imaging of superconductors.

cond-mat.mes-hall↗

arXiv2022

Imaging dark charge emitters in diamond via carrier-to-photon conversion

The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity. Cyclic charge state conversion of neighboring point defects sensitive to the excitation beam leads to a position-dependent stream of photo-generated carriers whose capture by the probe NV- leads to a fluorescence change. This "charge-to-photon" conversion scheme allows us to image other individual point defects surrounding the probe NV, including non-fluorescent "single-charge emitters" that would otherwise remain unnoticed. Given the ubiquity of color center photo-chromism, this strategy may likely find extensions to material systems other than diamond.

cond-mat.mtrl-sci↗

arXiv2021

Optical activation and detection of charge transport between individual color centers in room-temperature diamond

Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a "source" NV undergoes optically-driven cycles of ionization and recombination to produce a stream of photo-generated carriers, one of which we subsequently capture via a "target" NV several micrometers away. We use a spin-to-charge conversion scheme to encode the spin state of the source color center into the charge state of the target, in the process allowing us to set an upper bound to carrier injection from other background defects. We attribute our observations to the action of unscreened Coulomb potentials producing giant carrier capture cross-sections, orders of magnitude greater than those typically attained in ensemble measurements. Besides their fundamental interest, these results open intriguing prospects in the use of free carriers as a quantum bus to mediate effective interactions between paramagnetic defects in a solid-state chip.

cond-mat.mes-hall↗

arXiv2021

Investigation of photon emitters in Ce-implanted hexagonal boron nitride

Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts.

cond-mat.mes-hall↗

arXiv2020

Probing metastable space-charge potentials in a wide bandgap semiconductor

While the study of space charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide bandgap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape - and concomitant field - can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space charge field, which we then exploit to show space-charge-induced carrier guiding.

cond-mat.mes-hall↗

arXiv2020

Long-term spin state storage using ancilla charge memories

We articulate confocal microscopy and electron spin resonance to implement spin-to-charge conversion in a small ensemble of nitrogen-vacancy (NV) centers in bulk diamond, and demonstrate charge conversion of neighboring defects conditional on the NV spin state. We build on this observation to show time-resolved NV spin manipulation and ancilla-charge-aided NV spin state detection via integrated measurements. Our results hint at intriguing opportunities in the search for enhanced forms of color-center-based metrology and information processing down to the limit of individual point defects.

quant-ph↗