arXiv subjects

Arumugum Thamizhavel

Publications and source records attributed to Arumugum Thamizhavel.

3 recordsLinked to original sources

arXiv2026

Revealing quantum metric multipoles in magnetic topological insulator MnBi2Te4

Nonlinear electronic transport has emerged as a powerful probe of the quantum geometry in topological quantum materials, where the band topology and broken symmetries facilitate power law current voltage responses beyond Ohms law. While nonlinear transport of the second and third orders has been studied in several quantum materials, higher-order transport has so far mainly remained experimentally inaccessible, leaving more detailed features of the quantum geometry unexplored. Here, we observe higher order nonlinear electronic transport up to the seventh harmonic order in multilayer magnetic topological insulator MnBi2Te4. We find an even-odd behavior where the odd order nonlinear transport components dominate while the even-order ones are suppressed. Temperature and magnetic field dependent measurements show a strong correlation between the nonlinear transport and the magnetic phases of MnBi2Te4. Through scaling analysis and theoretical calculations, quantum metric multipoles and nonlinear Drude conductivities are identified as the microscopic origins of the nonlinear transport.

cond-mat.mes-hall↗

arXiv2025

Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures

Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic carrier dynamics. Here, we demonstrate ReS$_2$-hBN FETs with few-layer graphene (FLG) van der Waals contacts that form nearly barrier-free interfaces, enabling intrinsic transport in ReS$_2$, an anisotropic, low-symmetry TMDC rarely exhibiting disorder-free behavior. The clean ReS$_2$-FLG platform allows direct observation of random telegraph noise (RTN) even in micron-scale channels, manifested as discrete two-level current fluctuations between 90-150 K arising from stochastic trapping at localized hBN defect sites. With increasing temperature, the RTN evolves into a 1/f spectrum as multiple traps activate. Statistical analysis of RTN amplitudes and capture-emission kinetics identifies substitutional carbon-related centers in hBN as dominant defects. These findings establish a generalizable approach for probing dielectric-origin defect dynamics in intrinsically conducting, low-symmetry 2D semiconductors.

cond-mat.mes-hall↗

arXiv2022

Resonant Soft X-Ray Scattering on LaPt$_2$Si$_2$

X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPt$_2$Si$_2$ single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si $s$ and $d$ local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local $4f$ excitations. Calculations show that Pt $d$-LPDOS dominates the occupied states, and a sharp localized La $f$ state is found in the unoccupied states, in line with the observations.

cond-mat.mtrl-sci↗