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Arun Bansil

Publications and source records attributed to Arun Bansil.

At least 109 records · Page 6Linked to original sources

Multi-Band Superconductivity in Strongly Hybridized 1T'-WTe$_2$/NbSe$_2$ Heterostructures

The interplay of topology and superconductivity has become a subject of intense research in condensed matter physics for the pursuit of topologically non-trivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure, locally, owing to hybridization of electronic states. Here, we investigate such strongly proximity-coupled heterostructures of monolayer 1T'-WTe$_2$, grown on NbSe$_2$ by van-der-Waals epitaxy. The superconducting local density of states (LDOS), resolved in scanning tunneling spectroscopy down to 500~mK, reflects a hybrid electronic structure, well-described by a multi-band framework based on the McMillan equations which captures the multi-band superconductivity inherent to the NbSe$_2$ substrate and that induced by proximity in WTe$_2$, self-consistently. Our material-specific tight-binding model captures the hybridized heterostructure quantitatively, and confirms that strong inter-layer hopping gives rise to a semi-metallic density of states in the 2D WTe$_2$ bulk, even for nominally band-insulating crystals. The model further accurately predicts the measured order parameter $Δ\simeq 0.6$~meV induced in the WTe$_2$ monolayer bulk, stable beyond a 2~T magnetic field. We believe that our detailed multi-band analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials.

cond-mat.supr-con↗

Collective plasmonic modes in the chiral multifold fermionic material CoSi

Plasmonics in topological semimetals offers exciting opportunities for fundamental physics exploration as well as for technological applications. Here, we investigate plasmons in the exemplar chiral crystal CoSi, which hosts a variety of multifold fermionic excitations. We show that CoSi hosts two distinct plasmon modes in the infrared regime at 0.1 eV and 1.1 eV in the long-wavelength limit. The 0.1 eV plasmon is found to be highly dispersive, and originates from intraband collective oscillations associated with a double spin-1 excitation, while the 1.1 eV plasmon is dispersionless and it involves interband correlations. Both plasmon modes lie outside the particle-hole continuum and possess long lifetime. Our study indicates that the CoSi class of materials will provide an interesting materials platform for exploring fundamental and technological aspects of topological plasmonics.

cond-mat.mtrl-sci↗

High Spin-Chern-Number Insulator in $α$-Antimonene with a Hidden Topological Phase

In investigating the topological electronic structures of monolayer $α$-phase group V elements, we uncover a new topological phase, which is invisible in the symmetry-based topological quantum chemistry (TQC) as well as symmetry indicators (SIs). Since $α$ phase As and Sb share the same band representations at high-symmetry points, they are both trivial insulators in terms of TQC and SIs. We demonstrate, however, that there is a topological phase transition between As and Sb that involves a band-gap closing at two $k$-points on the high-symmetry $\rm{X}$-$\rmΓ$-$\rm{X}$ line. In the absence of spin-orbit coupling (SOC), As is a trivial insulator, while Sb is a Dirac semimetal with four Dirac points (DPs) located away from the high-symmetry lines. Inclusion of $S_z$-conserved SOC gaps out the Dirac points and induces a nontrivial Berry curvature and drives Sb into a high spin Chern number topological phase. The band structure of $α$-Bi differs from that of Sb by a band inversion at $Γ$, transforming Bi into a Z$_2$ topological insulator. Our study shows that quantized spin Hall conductivity can serve as a topological invariant beyond Z$_2$ for characterizing topological phases.

cond-mat.mes-hall↗

Relativistic horizon of interacting Weyl fermions in condensed matter systems

The intersections of topology, geometry and strong correlations offer many opportunities for exotic quantum phases to emerge in condensed matter systems. Weyl fermions, in particular, provide an ideal platform for exploring the dynamical instabilities of single-particle physics under interactions. Despite its fundamental role in relativistic field theory, the concept of causality and the associated spacetime light cone and event horizon has not been considered in connection with interacting Weyl fermionic excitations in quantum matter. Here, by using charge-density wave (CDW) as an example, we unveil the behavior of interacting Weyl fermions and show that a Weyl fermion in a system can open a band gap by interacting only with other Weyl fermions that lie within its energy-momentum dispersion cone. In this sense, causal connections or interactions are only possible within overlapping dispersion cones and each dispersion cone thus constitutes a solid-state analogue of the more conventional `event horizon' of high-energy physics. Our study provides a universal framework for considering interacting relativistic quasiparticles in condensed matter by separating them into energy-like and momentum-like relationships in analogy with the time-like and space-like events in high-energy physics. Finally, we consider two different candidate materials for hosting the Weyl CDW phase: (TaSe$_4$)$_2$I and Mo$_3$Al$_2$C. Our study greatly enriches the phenomenology and unveils new connections between condensed matter and high-energy physics.

cond-mat.str-el↗

Sensitivity of the electronic and magnetic structures of cuprate superconductors to density functional approximations

We discuss the crystal, electronic, and magnetic structures of $\mathrm{La_{2-x}Sr_{x}CuO_{4}}$ (LSCO) for $x=0.0$ and $x=0.25$ employing 13 density functional approximations, representing the local, semi-local, and hybrid exchange-correlation approximations within the Perdew-Schmidt hierarchy. The meta-generalized gradient approximation (meta-GGA) class of functionals is found to perform well in capturing the key properties of LSCO, a prototypical high-temperature cuprate superconductor. In contrast, the local-spin-density approximation, GGA, and the hybrid density functional fail to capture the metal-insulator transition under doping.

cond-mat.supr-con↗

Realization of an intrinsic, ferromagnetic topological state in MnBi8Te13

The interplay between topology and magnetism is essential for realizing novel topological states including the axion insulator, the magnetic Weyl semimetal, etc. An intrinsically ferromagnetic topological material with only the topological bands at the charge neutrality energy has so far remained elusive. By rationally designing the natural heterostructure consisting of [MnBi2Te4] septuple layers and [Bi2Te3] quintuple layers, we report MnBi8Te13 as the first intrinsic ferromagnetic topological material with clean low-energy band structure. Based on the thermodynamic, transport and neutron diffraction measurements, our data show that despite the adjacent [MnBi2Te4] being 44.1 Å apart, MnBi8Te13 manifests long-range ferromagnetism below 10.5 K with strong coupling between magnetism and charge carriers. Our first-principles calculations and angle-resolved photoemission spectroscopy measurements further demonstrate that MnBi8Te13 is an intrinsic ferromagnetic axion state. Therefore, MnBi8Te13 serves as an ideal system to investigate rich emergent phenomena, including the quantized anomalous Hall effect and quantized topological magnetoelectric effect.

cond-mat.str-el↗

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for developing new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic structures of ultra-thin films of recently introduced 2D synthetic materials MSi$_2$Z$_4$ (M = Mo or W and Z = N or As) using first-principles modeling. Stacking of MSi$_2$Z$_4$ monolayers is found to generate dynamically stable bilayer and bulk materials with thickness-dependent properties. When spin-orbit coupling (SOC) is included in the computations, MSi$_2$N$_4$ monolayers display indirect bandgaps and large spin-split states at the $K$ and $K'$ symmetry points at the corners of the Brillouin zone with nearly 100\% spin polarization. The spins are locked in opposite directions along an out-of-the-plane direction at $K$ and $K'$, leading to spin-valley coupling effects. As expected, spin polarization is absent in the pristine bilayers due to the presence of inversion symmetry, but it can be induced via an external out-of-plane electric field much like the case of Mo(W)S$_2$ bilayers. A transition from an indirect to a direct bandgap can be driven by replacing N by As in MSi$_2$(N, As)$_4$ monolayers. Our study indicates that the MSi$_2$Z$_4$ materials can provide a viable alternative to the MoS$_2$ class of 2D materials for valleytronics and optoelectronics applications.

cond-mat.mes-hall↗

Antiferromagnetic VdW Phase at the Interface of Sputtered Topological Insulator/Ferromagnet-Bi2Te3/Ni80Fe20 Heterostructures

Magnetic ordering in topological insulators (TI) is crucial for breaking time-reversal symmetry (TRS) and thereby opening a gap in the topological surface states (TSSs) [1-6], which is the key for realizing useful topological properties such as the quantum anomalous Hall (QAH) effect, axion insulator state and the topological magnetoelectric effect. Combining TIs with magnetic materials can be expected to yield interfaces [26-28] with unique topological and magnetic phases but such interfaces largely remain unexplored. Here, we report the discovery of a novel antiferromagnetic (AFM) Van der Waals (VdW) phase at the interface of a sputtered c-axis oriented TI/FM (Bi2Te3/Ni80Fe20) heterostructure due to the formation of a Ni-intercalated Bi2Te3 VdW interfacial layer. The TI/FM heterostructure is shown to possess a significant spontaneous exchange bias and the presence of an AFM order at the interface via measurements of the hysteresis loop as well as the observation of compensated magnetic moments at the interface using polarized neutron reflectometry (PNR). An in-depth analysis of the structural and chemical properties of the interfacial AFM phase was carried out using selected area electron diffraction (SAED), electron energy loss spectroscopy (EELS), and X-ray photoelectron spectroscopy (XPS). These studies show evidence of solid-state reaction between the intercalated Ni atoms and Bi2Te3 layers and of the formation of topologically nontrivial magnetic VdW compounds. The Néel temperature of the interfacial AFM phase is 63 K, which is higher than that of typical magnetic topological insulators [53]. Our study shows how industrial CMOS-process-compatible sputtered TI/FM heterostructures can provide a novel materials platform for exploring the emergence of interfacial topological magnetic phases and high-temperature topological magnetic states.

cond-mat.mtrl-sci↗

Photonic Topological Transitions and Epsilon-Near-Zero Surface Plasmons in Type-II Dirac Semimetal NiTe$_2$

Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac semimetal hosting Lorentz-violating Dirac fermions. By {\it ab~initio~} density functional theory modeling, we show that NiTe$_2$ harbors multiple topological photonic regimes for evanescent waves (such as surface plasmons) across the near-infrared and optical range. By electron energy-loss experiments, we identify surface plasmon resonances near the photonic topological transition points at the epsilon-near-zero (ENZ) frequencies $\approx 0.79$, $1.64$, and $2.22$ eV. Driven by the extreme crystal anisotropy and the presence of Lorentz-violating Dirac fermions, the experimental evidence of ENZ surface plasmon resonances confirm the non-trivial photonic and electronic topology of NiTe$_2$. Our study paves the way for realizing devices for light manipulation at the deep-subwavelength scales based on electronic and photonic topological physics for nanophotonics, optoelectronics, imaging, and biosensing applications.

cond-mat.mtrl-sci↗

Acoustic plasmons and conducting carriers in hole-doped cuprate superconductors

The superconductivity of cuprates, which has been a mystery ever since its discovery decades ago, is created through doping electrons or holes into a Mott insulator. There, however, exists an inherent electron-hole asymmetry in cuprates. The layered crystal structures of cuprates enable collective charge excitations fundamentally different from those of three-dimensional metals, i.e., acoustic plasmons. Acoustic plasmons have been recently observed in electron-doped cuprates by resonant inelastic X-ray scattering (RIXS); in contrast, there is no evidence for acoustic plasmons in hole-doped cuprates, despite extensive measurements. This contrast led us to investigate whether the doped holes in cuprates La$_{2-x}$Sr$_x$CuO$_4$ are conducting carriers or are too incoherent to induce collective charge excitation. Here we present momentum-resolved RIXS measurements and calculations of collective charge response via the loss function to reconcile the aforementioned issues. Our results provide unprecedented spectroscopic evidence for the acoustic plasmons and long sought conducting p holes in hole-doped cuprates.

cond-mat.str-el↗

Aspects of symmetry and topology in the charge density wave phase of 1T-TiSe2

The charge density wave (CDW) in 1T-TiSe2 accompanied by the periodic lattice distortion has a nontrivial symmetry configuration. The symmetry is important as an indication of the mechanism and a cue for experimental probes. We examine the symmetry of the system and clear up the connection of electronic structures between the normal and the CDW states. Especially, we unravel the consequential irreducible representations (IRs) of electronic states and, more ahead, those of gap functions among bands when the CDW occurs. Normally symmetry-related topology will be achieved directly, so we assert that the theory is valuable and practical for the search of topological CDW insulators.

cond-mat.mtrl-sci↗

Layer Hall effect in a 2D topological Axion antiferromagnet

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential.

cond-mat.mtrl-sci↗

Antisite defect qubits in monolayer transition metal dichalcogenides

Being atomically thin and amenable to external controls, two-dimensional (2D) materials offer a new paradigm for the realization of patterned qubit fabrication and operation at room temperature for quantum information sciences applications. Here we show that the antisite defect in 2D transition metal dichalcogenides (TMDs) can provide a controllable solid-state spin qubit system. Using high-throughput atomistic simulations, we identify several neutral antisite defects in TMDs that lie deep in the bulk band gap and host a paramagnetic triplet ground state. Our in-depth analysis reveals the presence of optical transitions and triplet-singlet intersystem crossing processes for fingerprinting these defect qubits. As an illustrative example, we discuss the initialization and readout principles of an antisite qubit in WS2, which is expected to be stable against interlayer interactions in a multilayer structure for qubit isolation and protection in future qubit-based devices. Our study opens a new pathway for creating scalable, room-temperature spin qubits in 2D TMDs.

cond-mat.mes-hall↗

Redox oscillations in 18650-type lithium-ion cell revealed by in operando Compton scattering imaging

Compton scattering imaging using high-energy synchrotron x-rays allows the visualization of the spatio-temporal lithiation state in lithium-ion batteries probed in-operando. Here, we apply this imaging technique to the commercial 18650-type cylindrical lithium-ion battery. Our analysis of the lineshapes of the Compton scattering spectra taken from different electrode layers reveals the emergence of inhomogeneous lithiation patterns during the charge-discharge cycles. Moreover, these patterns exhibit oscillations in time where the dominant period corresponds to the time scale of the charging curve.

physics.app-ph↗

High-order Van Hove singularities in cuprates and related high-Tc superconductors

Two-dimensional (2D) Van Hove singularities (VHSs) associated with the saddle points or extrema of the energy dispersion usually show logarithmic divergences in the density of states (DOS). However, recent studies find that the VHSs originating from higher-order saddle-points have faster-than-logarithmic divergences, which can amplify electron correlation effects and create exotic states such as supermetals in 2D materials. Here we report the existence of 'high-order' VHSs in the cuprates and related high-Tc superconductors and show that the anomalous divergences in their spectra are driven by the electronic dimensionality of the system being lower than the dimensionality of the lattice. The order of VHS is found to correlate with the superconducting Tc such that materials with higher order VHSs display higher Tc's. We further show that the presence of the normal and higher-order VHSs in the electronic spectrum can provide a straightforward marker for identifying the propensity of a material toward correlated phases such as excitonic insulators or supermetals. Our study opens up a new materials playground for exploring the interplay between high-order VHSs, superconducting transition temperatures and electron correlation effects in the cuprates and related high-Tc superconductors.

cond-mat.str-el↗

A Higher-Order Topological Insulator Phase in a Modulated Haldane Model

We explore topological properties of a modulated Haldane model (MHM) in which the strength of the nearest-neighbor and next-nearest-neighbor terms is made unequal and the three-fold rotational symmetry $\mathcal{C}_3$ is broken by introducing a trimerization term ($|t_{1w(2w)}|< t_{1s(2s)}$) in the Hamiltonian. Using the parameter $η={t_{1w}}/{t_{1s}}= t_{2w}/t_{2s}$, we show that the MHM supports a transition from the quantum anomalous Hall insulator (QAHI) to a HOTI phase at $η=\pm 0.5$. The MHM also hosts a zero-energy corner mode on a nano-disk that can transition to a trivial insulator without gap-closing when the inversion symmetry is broken. The gap-closing critical states are found to be magnetic semimetals with a single Dirac node which, unlike the classic Haldane model, can move along the high-symmetry lines in the Brillouin zone. MHM offers a rich tapestry of HOTI and other topological and non-topological phases.

cond-mat.mes-hall↗

A new noncollinear ferromagnetic Weyl semimetal with anisotropic anomalous Hall effect

A developing frontier in condensed matter physics is the emergence of novel electromagnetic responses, such as topological and anomalous Hall effect (AHE), in ferromagnetic Weyl semimetals (FM-WSMs). Candidates of FM-WSM are limited to materials that preserve inversion symmetry and generate Weyl crossings by breaking time-reversal symmetry. These materials share three common features: a centrosymmetric lattice, a collinear FM ordering, and a large AHE observed when the field is parallel to the magnetic easy-axis. Here, we present CeAlSi as a new type of FM-WSM, where the Weyl nodes are stabilized by breaking inversion symmetry, but their positions are tuned by breaking time-reversal symmetry. Unlike the other FM-WSMs, CeAlSi has a noncentrosymmetric lattice, a noncollinear FM ordering, and a novel AHE that is anisotropic between the easy- and hard-axes. It also exhibits large FM domains that are promising for both device applications and an interplay between the Weyl nodes and FM domain walls.

cond-mat.mtrl-sci↗

Fully-Compensated Ferrimagnetic Spin Filter Materials within the Cr$\textit{M}\textit{N}$Al Equiatomic Quaternary Heusler Alloys

XX'YZ equiatomic quaternary Heusler alloys (EQHA's) containing Cr, Al, and select Group IVB elements ($\textit{M}$ = Ti, Zr, Hf) and Group VB elements ($\textit{N}$ = V, Nb, Ta) were studied using state-of-the-art density functional theory to determine their effectiveness in spintronic applications. Each alloy is classified based on their spin-dependent electronic structure as a half-metal, a spin gapless semiconductor, or a spin filter material. We predict several new fully-compensated ferrimagnetic spin filter materials with small electronic gaps and large exchange splitting allowing for robust spin polarization with small resistance. CrVZrAl, CrVHfAl, CrTiNbAl, and CrTiTaAl are identified as particularly robust spin filter candidates with an exchange splitting of $\sim 0.20$ eV. In particular, CrTiNbAl and CrTiTaAl have exceptionally small band gaps of $\sim 0.10$ eV. Moreover, in these compounds, a spin asymmetric electronic band gap is maintained in 2 of 3 possible atomic arrangements they can take, making the electronic properties less susceptible to random site disorder. In addition, hydrostatic stress is applied to a subset of the studied compounds in order to determine the stability and tunability of the various electronic phases. Specifically, we find the CrAlV$\textit{M}$ subfamily of compounds to be exceptionally sensitive to hydrostatic stress, yielding transitions between all spin-dependent electronic phases.

cond-mat.mtrl-sci↗