arXiv subjects

Aruna N. Ramanayaka

Publications and source records attributed to Aruna N. Ramanayaka.

4 recordsLinked to original sources

arXiv2026

Superconducting Flux Memory for Cryogenic Applications

We report the development of flux memory for use with superconducting circuits. This technology stores persistent currents in superconducting loops on-chip to be used to provide flux biasing for superconducting circuits, like qubits. We developed three types of flux memory and draw comparisons among them for circuit design. We demonstrate the utility of flux memory by using an in-situ flux detector and characterize each approach and further demonstrate that once flux is set in a memory cell, benchtop DC control sources can be powered off, leaving the on-chip flux bias in place. We propose that flux memory can be arranged in a two-dimensional configuration to multiplex control signals and reduce how line counts scale (N^2 devices -> 2N control lines), and our experimental results pave the path to the proposed scalability. We demonstrate the use of flux memory to flux bias a transmon qubit and show the tunability of the qubit state to a target frequency which remained stable on-chip for 20 hours.

quant-ph↗

arXiv2016

Projected dipole moments of individual two-level defects extracted using circuit quantum electrodynamics

Material-based two-level systems (TLSs), appearing as defects in low-temperature devices including superconducting qubits and photon detectors, are difficult to characterize. In this study we apply a uniform dc-electric field across a film to tune the energies of TLSs within. The film is embedded in a superconducting resonator such that it forms a circuit quantum electrodynamical (cQED) system. The energy of individual TLSs is observed as a function of the known tuning field. By studying TLSs for which we can determine the tunneling energy, the actual $p_z$, dipole moments projected along the uniform field direction, are individually obtained. A distribution is created with 60 $p_z$. We describe the distribution using a model with two dipole moment magnitudes, and a fit yields the corresponding values $p=p_1= 2.8\pm 0.2$ Debye and $p=p_2=8.3\pm0.4$ Debye. For a strong-coupled TLS the vacuum-Rabi splitting can be obtained with $p_z$ and tunneling energy. This allows a measurement of the circuit's zero-point electric field fluctuations, in a method that does not need the electric-field volume.

cond-mat.supr-con↗

arXiv2015

Cavity quantum electrodynamics using a near-resonance two-level system: emergence of the Glauber state

Random tunneling two-level systems (TLSs) in dielectrics have been of interest recently because they adversely affect the performance of superconducting qubits. The coupling of TLSs to qubits has allowed individual TLS characterization, which has previously been limited to TLSs within (thin) Josephson tunneling barriers made from aluminum oxide. Here we report on the measurement of an individual TLS within the capacitor of a lumped-element LC microwave resonator, which forms a cavity quantum electrodynamics (CQED) system and allows for individual TLS characterization in a different structure and material than demonstrated with qubits. Due to the reduced volume of the dielectric (80 $μ$m$^{3}$), even with a moderate dielectric thickness (250 nm), we achieve the strong coupling regime as evidenced by the vacuum Rabi splitting observed in the cavity spectrum. A TLS with a coherence time of 3.2 $μ$s was observed in a film of silicon nitride as analyzed with a Jaynes-Cummings spectral model, which is larger than seen from superconducting qubits. As the drive power is increased, we observe an unusual but explicable set of continuous and discrete crossovers from the vacuum Rabi split transitions to the Glauber (coherent) state.

cond-mat.supr-con↗

arXiv2010

Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite

Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting $Hg_{0.8}Cd_{0.2}Te$, and some other systems. Finally, we observe the transport data to follow $B\times dR_{xy}/dB \approx - ΔR_{xx}$. This feature is consistent with the observed relative phases of the oscillatory $R_{xx}$ and $R_{xy}$.

cond-mat.mes-hall↗