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Asaf Kay

Publications and source records attributed to Asaf Kay.

5 recordsLinked to original sources

Film flip and transfer process to enhance light harvesting in ultrathin absorber films on specular back-reflectors

Optical interference is used to enhance light-matter interaction and harvest broadband light in ultrathin semiconductor absorber films on specular back-reflectors. However, the high-temperature processing in oxygen atmosphere required for oxide absorbers often degrades metallic back-reflectors and their specular reflectance. In order to overcome this problem, we present a newly developed film flip and transfer process that allows for high-temperature processing without degradation of the metallic back-reflector and without the need of passivation interlayers. The film flip and transfer process improves the performance of photoanodes for photoelectrochemical water splitting comprising ultrathin (< 20 nm) hematite (Fe2O3) films on silver-gold alloy (90 at% Ag-10 at% Au) back-reflectors. We obtain specular back-reflectors with high reflectance below hematite films, which is necessary for maximizing the productive light absorption in the hematite film and minimizing non-productive absorption in the back-reflector. Furthermore, the film flip and transfer process opens up a new route to attach thin film stacks onto a wide range of substrates including flexible or temperature sensitive materials.

cond-mat.mtrl-sci

Wavelength Dependent Photocurrent of Hematite Photoanodes: Reassessing the Hole Collection Length

The photoelectrochemical behavior of a planar 1 cm2 thick Ti-doped hematite film deposited on F:SnO2 coated glass was studied with both front and back illumination. Despite low quantum efficiency, photocurrent was observed upon back illumination with low wavelengths, indicating that some photogenerated holes are able to traverse at least 700 nm across the hematite film and effectively oxidize water. This cannot be accounted for using the commonly accepted hole collection length of hematite based on fitting to the Gartner model. Furthermore, under back illumination, 450 nm excitation resulted in increased photocurrent as compared to 530 nm excitation despite most of the light being absorbed further away from the surface. These results demonstrate that the photocurrent is strongly dependent on the optical excitation wavelength, and related to both delocalized holes with long lifetime and localized excitations rather than only being dependent on the proximity of the absorption to the surface.

physics.chem-ph

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite ({\alpha}-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

cond-mat.mtrl-sci

Propagation length of antiferromagnetic magnons governed by domain configurations

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.

cond-mat.mtrl-sci

Magnetic states at the surface of alpha-Fe2O3 thin films doped with Ti, Zn or Sn

The spin states at the surface of epitaxial thin films of hematite, both undoped and doped with 1% Ti, Sn or Zn, respectively, were probed with x-ray magnetic linear dichroism (XMLD) spectroscopy. Morin transitions were observed for the undoped (T_M~200 K) and Sn-doped (T_M~300 K) cases, while Zn and Ti-doped samples were always in the high and low temperature phases, respectively. In contrast to what has been reported for bulk hematite doped with the tetravalent ions Sn4+ and Ti4+, for which T_M dramatically decreases, these dopants substantially increase T_M in thin films, far exceeding the bulk values. The normalized Fe LII-edge dichroism for T T_M state was achieved. The temperature dependence of the critical field for the Sn-doped sample was characterized in detail. It was demonstrated the sample-to-sample variations of the Fe LIII-edge spectra were, for the most part, determined solely by the spin orientation state. Calculations of the polarization-depedent spectra based on a spin-multiplet model were in reasonable agreement with the experiment and showed a mixed excitation character of the peak structures.

cond-mat.mtrl-sci