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Ashwin Tulapurkar

Publications and source records attributed to Ashwin Tulapurkar.

14 recordsLinked to original sources

Artificial Neural Network (ANN) -- Oscillatory Neural Network (ONN) Hybrid System Using Domain-Wall Synapse Devices and Nano-Constriction Spin Hall Nano Oscillators

A coupled spintronic oscillator array has been considered attractive for neuromorphic computing applications. Experimental reports have shown the nano-constriction geometry to be a relatively easier-to-fabricate platform for implementing such spin oscillators, but most prior reports on training and inference algorithms for neuromorphic computing using spin oscillators have been mostly restricted to the nano-pillar geometry. Also, those prior reports involve updating the natural frequency values of the oscillators and moving the synchronization regions on to the data clusters during the offline learning phase, which has associated challenges. In this context, we design and simulate a novel artificial neural network (ANN) - oscillator neural network (ONN) algorithm where in the offline learning phase, the weight parameters of the ANN are updated such that the data clusters are instead moved to the synchronization regions of spin Hall nano oscillators (SHNOs) in the nano-constriction geometry, as obtained through micromagnetic simulations. We further simulate the on-chip inference part of the ANN-ONN algorithm where the ANN is implemented on a crossbar array of domain-wall synapse devices, as simulated here through micromagnetics, and the ONN is implemented on nano-constriction SHNOs. We show successful data classification for both binary and multi-class classification tasks to demonstrate the generalizability of our proposed scheme.

physics.app-ph

Proposal for a graphene based nano-electro-mechanical reference piezoresistor

Motivated by the recent prediction of anisotropy in piezoresistance of ballistic graphene along longitudinal and transverse directions, we investigate the angular gauge factor of graphene in the ballistic and diffusive regimes using highly efficient quantum transport models. It is shown that the angular guage factor in both ballistic and diffusive graphene between $0^{\circ}$ to $90^{\circ}$ bears a sinusoidal relation with a periodicity of $π$ due to the reduction of six-fold symmetry into a two-fold symmetry as a result of applied strain. The angular gauge factor is zero at critical angles $20^{\circ}$ and $56^{\circ}$ in ballistic and diffusive regimes respectively. Based on these findings, we propose a graphene based ballistic nano-sensor which can be used as a reference piezoresistor in a Wheatstone bridge read-out technique. The reference sensors proposed here are unsusceptible to inherent residual strain present in strain sensors and unwanted strain generated by the vapours in explosives detection. The theoretical models developed in this paper can be applied to explore similar applications in other 2D-Dirac materials. The proposals made here potentially pave the way for implementation of NEMS strain sensors based on the principle of ballistic transport, which will eventually replace MEMS piezoresistance sensors with a decrease in feature size. The presence of strain insenstive ``critical angle'' in graphene may be useful in flexible wearable electronics also.

cond-mat.mes-hall

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we present the design of an STT-MRAM device with improved features when compared with a traditional trilayer device. The device consists of a superlattice heterostructure terminated with the anti-reflective regions sandwiched between the fixed and free ferromagnetic layers. Employing the Green's function spin transport formalism coupled self-consistently with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation, we present the design of an STT-MRAM based on the band-pass filtering having an ultra-high TMR (3.5*10e4) and large spin current. We demonstrate that the STT-MRAM design having band-pass spin filtering are nearly 1100% more energy efficient than traditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM. We also present detailed probabilistic switching and energy analysis for a trilayer MTJ and band-pass filtering based STT-MRAM. Our predictions serve as a template to consider the heterostructures for next-generation spintronic device applications.

cond-mat.mes-hall

Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields

We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit ($0\%$-$10\%$). The longitudinal and transverse gauge factors are identical along armchair and zigzag directions. Our model predicts a significant variation ($\approx 1000\% $ change) in transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is $\approx 0.3$ whereas the transverse gauge factor is $\approx -3.3$. We rationalize our prediction using deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain, leading to an inverse change in gauge factor. The results obtained herein may serve as a template for high strain piezoresistance effect of graphene in nano electromechanical systems.

cond-mat.mes-hall

Skyrmion Based Spin-Torque Nano-Oscillator

Using micromagnetic simulation, we investigate the self-sustained oscillation of magnetic skyrmion in a ferromagnetic circular nanodot, driven by spin-torque which is generated from a reference layer of a circular nanopillar device. We demonstrate, by lowering the value of uniaxial anisotropy constant ($K_u$), the velocity of the skyrmion can be increased and using this property, gyration frequency of the skyrmion oscillator can be enhanced. Annihilation of the skyrmion at higher current densities, limit the gyration frequency of the oscillator, whereas by modifying the $K_u$ value at the edge of nanodot, we are able to protect the skyrmion from being annihilated at higher current densities which in turn, increases the gyration frequency of the skyrmion based oscillator. By linear fitting the velocity value, obtained from the motion of the skyrmion in a nanostrip, we also predict the gyration frequency of the skyrmion in the nanodot which proves the validity of our idea in an intuitive way. We have also varied the radius of the nanodisk to see its effect on skyrmion.

cond-mat.mes-hall

Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films

The magnetic properties in manganite have been found to be highly sensitive to the doping and structural manipulations. Here, we report the effect of B-site bismuth doping on the magnetic and transport properties in La0.5Ca0.5Mn1-xBixO3 (LCMBO) thin films (for x = 0, 0.02 and 0.05) for high-efficiency spintronics devices. For thin film of LCMBO (with x = 0.02), a significant increase in the magnetization and ferromagnetic ordering temperature (TC) are observed. Also, about 98% magnetoresistance (MR) and unusually large (~ 42%) anisotropic magnetoresistance (AMR) is observed at 50 K in the same LCMBO (for x = 0.02) thin film. This observed improvement in TC, MR and AMR in LCMBO (with x = 0.02) thin film may be attributed to the modulation of the trapped electrons through JT-distortions due to the replacement of Mn+3 ions by larger Bi+3 ions. With further increase in bismuth doping (for x = 0.05) at the B-site, a significant decrease in magnetization and TC have been observed.

cond-mat.mes-hall

Effects of Elastic Dephasing on Scaling of ultra-small Magnetic Tunnel Junctions

The study of the effects of scaling on magnetic tunnel junction (MTJ) devices has become an important topic in the field of spin-based memory devices. Here, we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ considered at small transverse cross-sectional areas using the non-equilibrium Green's function spin transport formalism. We consider the structures with and without dephasing effects and clearly point out as to how the tunnel magnetoresistance effect gets affected by dephasing. We attribute the trends noted by analyzing the transmission spectra and hence the currents across the devices. Although dephasing affects the TMR values for both devices, we note that the obtained TMR values are still in a reasonable range that may not hinder their usability for practical applications.

cond-mat.mes-hall

Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy

Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO (001) substrate using pulsed laser deposition system, along with the study of structural, magnetic and transport properties. The magnetic property measurements of the thin film suggest a soft ferromagnetic state at room temperature with an in-plane magnetic anisotropy and a Curie temperature well above the room temperature. Anisotropic magnetoresistance (AMR) ratio and temperature dependent electrical resistivity measurements of the thin film indicate the compound to be half-metallic in nature and therefore suitable for the fabrications of spintronics devices.

cond-mat.mtrl-sci

Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions

We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

cond-mat.mes-hall

Possible spin gapless semiconductor type behaviour in CoFeMnSi epitaxial thin films

Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin films of quaternary spin-gapless semiconductor CoFeMnSi Heusler alloy on MgO (001) substrates using a pulsed laser deposition system. These films show epitaxial growth along (001) direction and display uniform and smooth crystalline surface. The magnetic properties reveal that the film is ferromagnetically soft along the in-plane direction and its Curie temperature is well above 400 K. The electrical conductivity of the film is low and exhibits a nearly temperature independent semiconducting behaviour. The estimated temperature coefficient of resistivity for the film is -7x10^-10 Ohm.m/K, which is comparable to the values reported for spin-gapless semiconductors.

cond-mat.mtrl-sci

Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is frozen intentionally, the photovoltage exhibits a six-fold pattern indicative of the hot electron induced photothermoelectric effect that has also been seen in graphene p-n junctions made using metallic gates. We have observed that the photovoltage increases with decreasing temperature indicating a dominant role of supercollision scattering. Our technique can also be extended to other 2D materials and to finer features that will lead to p-n junctions which span a large area, like a superlattice, that can generate a larger photoresponse. Our work creating abrupt p-n junctions is distinct from previous works that use a source-drain bias voltage with a single ionic gate creating a spatially graded p-n junction.

cond-mat.mes-hall

Observation of Spin Nernst effect in Platinum

Central focus of spintronics is concentrated on generation of pure spin current and associated spin torque. Pure spin current can be generated by spin Hall effect in heavy metals by passing charge current. By spin Seebeck effect pure spin current can also be generated in ferromagnet. In this work we experimentally demonstrate that if heavy metals like Platinum with high spin orbit coupling carry heat current it can convert it into spin current due to relativistic spin orbit interaction. This conversion of heat current into spin current in non magnet is equivalent of thermally driven spin Hall effect or it is known as spin Nernst effect. We observed spin Nernst effect in Ni/Pt bi-layer experimentally and we confirm that when Pt is replaced by low spin orbit material like Al spin Nernst effect significantly reduces. So we have detected spin Nernst effect unambiguously and compare its strength with electrical spin Hall effect.

cond-mat.mes-hall

Ultra-sensitive nanoscale magnetic field sensors based on resonant spin filtering

Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose sensor structures based on the magneto-resistance physics of resonant spin-filtering and present device designs catered toward exceptional magnetic field sensing capabilities. Using the non-equilibrium Green's function spin transport formalism self consistently coupled to the Poisson's equation, we present highly-tunable pentalayer magnetic tunnel junction structures that are capable of exhibiting an ultra-high peak tunnel magneto resistance $(\approx 2500 \%$). We show how this translates to device designs featuring an ultra-high current sensitivity enhancement of over 300\% in comparison with typical trilayer MTJ sensors, and a wider tunable range of field sensitivity. We also demonstrate that a dynamic variation in sensor functionalities with the structural landscape enables a superior design flexibility over typical trilayer sensors. An optimal design exhibiting close to a 700\% sensitivity increase as a result of angle dependent spin filtering is then presented.This work sets a stage to engineer spintronic building blocks via the design of functional structures tailored to exhibit ultra-sensitive spin filtering.

cond-mat.mes-hall

Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents

We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.

cond-mat.mes-hall