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Athul Prem

Publications and source records attributed to Athul Prem.

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Machine-Learning Optimization of Detector-Grade Yield in High-Purity Germanium Crystal Growth

High-purity germanium (HPGe) crystals underpin some of the most sensitive detectors used in fundamental physics and other high-resolution radiation-sensing applications. Despite their importance, the supply of detector-grade HPGe remains limited because achieving high yield in Czochralski growth (CZ) depends on tightly coupled, nonlinear processes, impurity incorporation, thermal gradients, and dynamic control settings that are largely mastered by only a handful of companies with decades of experience. Here we present a data-driven prediction framework based on a Bidirectional Long Short-Term Memory (BiLSTM) neural network with multi-head attention, trained on time-resolved growth parameters (e.g., heater power, pull rate, and impurity indicators) from 48 independent crystal runs. The model predicts the final detector-grade fraction for each growth and, using SHAP feature-importance analysis, identifies impurity concentration and growth rate as the dominant factors governing yield, consistent with empirical understanding. By providing a quantitative, interpretable link between in-process signals and post-growth detector quality, this framework offers a practical path toward improving yield, reducing dependence on trial-and-error tuning, and scaling HPGe production for next-generation rare-event detectors.

physics.app-ph

Depletion-limited Effective Hall mobility in Micrometer-Scale High-Purity Germanium Crystals

Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental characterization of the thickness-dependent effective Hall mobility in bulk-grown, detector-grade HPGe at room temperature using Hall-effect measurements on n- and p-type samples sequentially thinned from 2.7~mm to 7~\textmu m. The intrinsic bulk carrier mobility remains thickness independent in this regime; the observed reduction in Hall-extracted mobility arises from electrostatic surface depletion that reduces the electrically active conducting thickness. The thickness-dependent data are accurately parameterized by an empirical extended-exponential relation, $\mu(t)=\mu_{0}[1-\exp(-(t/\tau)^{\beta})]$, where $\tau$ is a characteristic electrostatic length scale. Comparison with boundary-scattering and depletion-based models shows that Fuchs--Sondheimer scattering is negligible, while electrostatic depletion dominates the transport behavior. The hierarchy $\lambda_{D}<\tau\lesssim W_{0}$ directly links the apparent mobility reduction to long-range screening and near-surface electric fields. These results yield a simple design guideline: maintaining thicknesses $t\gtrsim 3\tau$ preserves near-bulk transport, whereas thinner structures operate in a depletion-controlled regime with strongly reduced effective conductivity.

physics.app-ph