arXiv subjects

Atikur Rahman

Publications and source records attributed to Atikur Rahman.

At least 19 recordsLinked to original sources

arXiv2026

Exciton-Selective Phonon Coupling in a Lead Halide Perovskite

Exciton-phonon interactions govern the optical response of semiconductors, yet disentangling multiple coupling channels in lead halide perovskites remains challenging. We investigate CsPbBr3 microcrystals using photoluminescence, Raman and reflectance spectroscopy at low temperature, revealing the simultaneous presence of high-energy and Rashba excitons, each accompanied by distinct phonon replica series. High-energy exciton replicas are uniquely spaced by approximately 9 meV, whereas Rashba exciton replicas exhibit a characteristic approximately 6 meV spacing, indicating the specificity of the exciton-phonon coupling. Unsupervised machine learning applied to a large low-temperature photoluminescence dataset reveals these replica features are prevalent. With increasing temperature, replica features broaden and merge, evolving into a dominant longitudinal optical phonon coupling regime at room temperature. This work establishes direct spectroscopic evidence for concurrent, exciton-specific phonon coupling within a single material, offering new pathways to engineer light-matter interactions for optoelectronic and phonon-photon-based quantum device applications.

cond-mat.mes-hall↗

arXiv2025

Topological polar textures on CsPbBr3 nanoplatelets

Polar topological textures like the bubble domains, flux--closures, and labyrinth etc., unlock functional responses in ferroic systems but are difficult to stabilize and control in chemically simple, solution--grown materials. Here we show that ultra--thin, large--area CsPbBr$_3$ nanoplatelets host room--temperature ferroelectric bubble domains whose characteristic size is tunable by thickness. Using contact--resonance piezoresponse force microscopy (PFM) across 125\~nm--2\~$\mu$m, we observe a systematic decrease in domain size with decreasing thickness, consistent with a depolarization--field controlled stability window. Repeated scanning transforms bubbles into labyrinthine patterns, indicating metastability under weak mechanical/electrical perturbations. Upon heating, bubbles evolve into labyrinths and vanish at $T_C\!\approx\!90^\circ$C, with domain nucleation recovered on cooling. These results establish a controllable platform for polar topology in a stable, stochiometric perovskite grown via a solvothermal route, and clarify how electrical boundary conditions (set by thickness and temperature) govern texture selection. The thickness--tunable polar textures identified here offer a route to engineer domain--wall--mediated functionalities in halide perovskites.

cond-mat.mes-hall↗

arXiv2024

Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil

Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing oxidized Molybdenum (Mo) foil using CVD and delve into the transport properties of as-grown samples. Devices fabricated from these MoS2 sheets exhibit excellent electrical responses, with the standout device achieving mobility exceeding 100 cm2V-1s-1. Structural analysis and optical signatures unveiled the presence of chalcogen defects within these samples. To decipher the influence of inherent defects on the electronic transport properties, we measured low-temperature transport on two distinct sets of devices exhibiting relatively high or low mobilities. Combining the thermally activated transport model with quantum capacitance calculations, we have shown the existence of shallow states near the conduction band, likely attributed to sulfur vacancies within MoS2. These vacancies are responsible for the hopping conduction of electrons in the device channel. Furthermore, our claims were substantiated through low-temperature scanning tunnelling microscopy measurements, which revealed an abundance of isolated and lateral double sulfur vacancies in Mo foil-grown samples. We found that these vacancies increase the density of states near the conduction band, inducing intrinsic n-type doping in the MoS2 channel. Consequently, this elevated conductivity enhances the field-effect mobility of MoS2 transistors. Our study offers insights into chalcogen vacancies in CVD-grown monolayer MoS2 and highlights their beneficial impact on electronic transport properties.

cond-mat.mes-hall↗

arXiv2024

Effects of Reduced Interlayer Interactions on the K-point Excitons of MoS$_2$ Nanoscrolls

Transition metal dichalcogenide (TMD) nanoscrolls (NS) exhibit significant photoluminescence (PL) signals despite their multilayer structure, which cannot be explained by the strained multilayer description of NS. Here, we investigate the interlayer interactions in NS to address this discrepancy. The reduction of interlayer interactions in NS is attributed to two factors: (1) the symmetry-broken mixed stacking order between neighbouring layers due to misalignment, and (2) the high inhomogeneity in the strain landscape resulting from the unique Archimedean spiral-like geometry with positive eccentricity. These were confirmed through transmission electron microscopy, field emission scanning electron microscopy and atomic force microscopy. To probe the effect of reduction of interlayer interactions in multilayered MoS$_2$ nanoscrolls, low-temperature PL spectroscopy was employed investigating the behaviour of K-point excitons. The effects of reduced interlayer interactions on exciton-phonon coupling (EXPC), exciton energy, and exciton oscillator strength are discussed, providing insights into the unique properties of TMD nanoscrolls.

cond-mat.mes-hall↗

arXiv2023

Tensile strain induced brightening of momentum forbidden dark exciton in WS$_2$

Transition-metal dichalcogenides (TMDs) host tightly bound quasi-particles called excitons. Based on spin and momentum selection rules, these excitons can be either optically bright or dark. In tungsten-based TMDs, momentum-forbidden dark exciton is the energy ground state and therefore it strongly affect the emission properties. In this work, we brighten the momentum forbidden dark exciton by placing WS$_2$ on top of nanotextured substrates which put the WS$_2$ layer under tensile strain, modifying electronic bandstructure. This enables phonon assisted scattering of exciton between momentum valleys, thereby brightening momentum forbidden dark excitons. Our results will pave the way to design ultrasensitive strain sensing devices based on TMDs.

cond-mat.mes-hall↗

arXiv2023

EWasteNet: A Two-Stream Data Efficient Image Transformer Approach for E-Waste Classification

Improper disposal of e-waste poses global environmental and health risks, raising serious concerns. The accurate classification of e-waste images is critical for efficient management and recycling. In this paper, we have presented a comprehensive dataset comprised of eight different classes of images of electronic devices named the E-Waste Vision Dataset. We have also presented EWasteNet, a novel two-stream approach for precise e-waste image classification based on a data-efficient image transformer (DeiT). The first stream of EWasteNet passes through a sobel operator that detects the edges while the second stream is directed through an Atrous Spatial Pyramid Pooling and attention block where multi-scale contextual information is captured. We train both of the streams simultaneously and their features are merged at the decision level. The DeiT is used as the backbone of both streams. Extensive analysis of the e-waste dataset indicates the usefulness of our method, providing 96% accuracy in e-waste classification. The proposed approach demonstrates significant usefulness in addressing the global concern of e-waste management. It facilitates efficient waste management and recycling by accurately classifying e-waste images, reducing health and safety hazards associated with improper disposal.

cs.CV↗

arXiv2022

Modulation of trion and exciton formation in monolayer WS2 by dielectric and substrate engineering

Photoluminescence (PL) of transition metal dichalcogenide (TMD) monolayers is strongly influenced by the dielectric environment. The defect states present in the substrate induces uncontrollable doping in the TMD monolayer and thereby modifies the PL spectra. There have been enormous efforts to tune and overcome the effect of inevitable subtract defects in PL spectra, but a proper understanding and a convenient way are still lacking. Here, we systematically studied the effect of surface defects by gradually increasing the separation between WS2 monolayer and substrate. Hence, we could precisely modulate the exciton and trion contribution in the PL spectra of WS2. The excitation power dependant measurements on dielectric engineered and patterned substrates helped us to shed light on the mechanism of PL modulation in monolayer WS2. We have also studied the influence of the nature of the charge carried by substrate defects on the PL spectra. These results open a new pathway to modulate and obtain the desired PL spectra of TMDs by engineering the substrates. Our findings will be useful for fabricating excitonic interconnects, valleytronic, and single-photon devices.

cond-mat.mes-hall↗

arXiv2022

Directing Monolayer Tungsten Disulfide Photoluminescence using a Bent Plasmonic Nanowire on a Mirror Cavity

Designing directional optical antennas without compromising the field enhancement requires specially designed optical cavities. Herein, we report on the experimental observations of directional photoluminescence emission from a monolayer Tungsten Disulfide using a bent-plasmonic nanowire on a mirror cavity. The geometry provides field enhancement and directivity to photoluminescence by sandwiching the monolayer between an extended cavity formed by dropcasting bent silver nanowire and a gold mirror. We image the photoluminescence emission wavevectors by using the Fourier plane imaging technique. The cavity out-couples the emission in a narrow range of wavevectors with a radial and azimuthal spreading of only 11.0° and 25.1°, respectively. Furthermore, we performed three dimensional finite difference time domain based numerical calculations to corroborate and understand the experimental results. We envisage that the results presented here will be readily harnessed for on-chip coupling applications and in designing inelastic optical antennas.

physics.optics↗

arXiv2021

Mirror-Coupled Microsphere can narrow the Angular distribution of Photoluminescence from WS2 Monolayers

Engineering optical emission from two dimensional, transition metal dichalcogenides (TMDs) materials such as Tungsten disulphide (WS2) has implications in creating and understanding nanophotonic sources. One of the challenges in controlling the optical emission from 2D materials is to achieve narrow angular spread using a simple photonic geometry. In this paper, we study how the photoluminescence of a monolayer WS2 can be controlled when coupled to film coupled microsphere dielectric antenna. Specifically, by employing Fourier plane microscopy and spectroscopic techniques, we quantify the wavevector distribution in the momentum space. As a result, we show beaming of the WS2 photoluminescence with angular divergence of {\theta}1/2 = 4.6{\deg}. Furthermore, the experimental measurements have been supported by three-dimensional numerical simulations. We envisage that the discussed results can be generalized to a variety of nanophotonic 2D materials, and can be harnessed in nonlinear and quantum technology.

physics.optics↗

arXiv2021

Directional emission from WS2 monolayer coupled to plasmonic Nanowire-on-Mirror Cavity

Influencing spectral and directional features of exciton emission characteristics from 2D transition metal dichalcogenides by coupling it to plasmonic nano-cavities has emerged as an important prospect in nanophotonics of 2D materials. In this paper we experimentally study the directional photoluminescence emission from Tungsten disulfide (WS2) monolayer sandwiched between a single-crystalline plasmonic silver nanowire (AgNW) waveguide and a gold (Au) mirror, thus forming an AgNW-WS2-Au cavity. By employing polarization-resolved Fourier plane optical microscopy, we quantify the directional emission characteristics from the distal end of the AgNW-WS2-Au cavity. Given that our geometry simultaneously facilitates local field enhancement and waveguiding capability, we envisage its utility in 2D material-based, on-chip nanophotonic signal processing, including nonlinear and quantum optical regimes.

physics.optics↗

arXiv2020

Optoelectronic characterisation of twisted germanium sulfide nanowires with experimental observation of intrinsic ferroelectricity

We report the optoelectrical characterisation of Eshelby twisted Germanium sulfide (GeS) nanowires with first experimental observation of ferroelectric order at room temperature in GeS which is an otherwise centrosymmetric molecule. The chemical composition and structure of these nanowires were confirmed by various spectroscopic, microscopic and diffractive techniques. In addition, the nanowires were found to be stable over time. From the optoelectronic measurements we found that these p-type semiconducting GeS nanowires have up to two orders higher charge carrier mobility than GeS nanosheets and have sustainable, robust photo-switching property. The existence of room temperature ferroelectricity is confirmed by piezoresponse force microscopy which showed hysteresis and butterfly loop, characteristics of a ferroelectric material. Our observations reveal that the properties of twisted GeS nanowires can be harnessed in making efficient electric sensors, photodetectors, data memories and flexible electronics.

cond-mat.mes-hall↗

arXiv2016

Patterning Superconductivity in a Topological Insulator

While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find that superconductivity can be patterned directly into Bi$_2$Se$_3$ nanostructures by selective doping with palladium (Pd). Superconducting regions are defined by depositing Pd on top of the nanostructures using electron beam lithography, followed by in-situ annealing. Electrical transport measurements at low temperatures show either partial or full superconducting transition, depending on the doping conditions. Structural characterization techniques indicate that Pd remains localized in the targeted areas, making it possible to pattern superconducting circuits of arbitrary shapes in this topological material.

cond-mat.mes-hall↗

arXiv2014

Weber blockade in superconducting nanowires

We have measured the critical current as a function of magnetic field in short and narrow superconducting aluminum nanowires. In the range of magnetic fields in which vortices can enter a nanowire in a single row, we find regular oscillations of the critical current as a function of magnetic field. The oscillations are found to correspond to adding a single vortex to the nanowire, with the number of vortices on the nanowire staying constant within each period of the oscillation. This effect can be thought of as a Weber blockade, and the nanowires act as quantum dots for vortices, analogous to the Coulomb blockade for electrons in quantum dots.

cond-mat.mes-hall↗

arXiv2014

Observation of angle-dependent transmission of Dirac electrons in graphene hetero junctions

The relativistic nature of charge carriers in graphene is expected to lead to an angle- dependent transmission through a potential barrier, where Klein tunneling involves annihilation of an electron and a hole at the edges of the barrier. The signatures of Klein tunneling have been observed in gated graphene devices, but the angle dependence of the transmission probability has not been directly observed. Here we show measurements of the angle-dependent transmission through quasi-ballistic graphene heterojunctions with straight and angled leads, in which the barrier height is controlled by a shared gate electrode. Using a balanced differential measurement technique, we isolate the angle-dependent contribution to the resistance from other angle-insensitive, gate-dependent and device-dependent effects. We find large oscillations in the transmission as a function of the barrier height in the case of Klein tunneling at a 45 deg angle, as compared to normal incidence. Our results are consistent with the model that predicts oscillations of the transmission probability due to interference of chiral carriers in a ballistic barrier. The observed angle dependence is the key element behind focusing of electrons and the realization of a Veselago lens in graphene.

cond-mat.mes-hall↗

arXiv2014

Quantum Interference Noise Near the Dirac Point in Graphene

Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers cannot efficiently screen the impurity potential. We have studied time-dependent conductance fluctuations and magnetoresistance in graphene in the close vicinity of the Dirac point. We show that the fluctuations are due to the quantum interference effects due to scattering on impurities, and find an unusually large reduction of the relative noise power in magnetic field, possibly indicating that an additional symmetry plays an important role in this regime.

cond-mat.mes-hall↗

arXiv2013

Asymmetric scattering of Dirac electrons and holes in graphene

The relativistic nature of Dirac electrons and holes in graphene profoundly affects the way they interact with impurities. Signatures of the relativistic behavior have been observed recently in scanning tunneling measurements on individual impurities, but the conductance measurements in this regime are typically dominated by electron and hole puddles. Here we present measurements of quantum interference noise and magnetoresistance in graphene pn junctions. Unlike the conductance, the quantum interference noise can provide access to the scattering at the Dirac point:it is sensitive to the motion of a single impurity, it depends strongly on the fundamental symmetries that describe the system and it is determined by the phase-coherent phenomena which are not necessarily obscured by the puddles. The temperature and the carrier density dependence of resistance fluctuations and magnetoresistance in graphene p-n junctions at low temperatures suggest that the noise is dominated by the quantum interference due to scattering on impurities and that the noise minimum could be used to determine the point where the average carrier density is zero. At larger carrier densities, the amplitude of the noise depends strongly on the sign of the impurity charge, reflecting the fact that the electrons and the holes are scattered by the impurity potential in an asymmetric manner.

cond-mat.mes-hall↗

arXiv2013

Transmission of phase information between electrons and holes in graphene

We have studied quantum interference between electrons and holes in a split-ring gold interferometer with graphene arms, one of which contained a pn junction. The carrier type, the pn junction and the phase of the oscillations in a magnetic field were controlled by a top gate placed over one of the arms. We observe clear Aharonov-Bohm oscillations at the Dirac point and away from it, regardless of the carrier type in each arm. We also find clear oscillations when one arm of the interferometer contains a single pn junction, allowing us to study the interplay of Aharonov-Bohm effect and Klein tunneling.

cond-mat.mes-hall↗

arXiv2013

Substrate-Independent Catalyst-Free Synthesis of High-Purity Bi2Se3 Nanostructures

We describe a catalyst-free vapor-solid synthesis of bismuth selenide (Bi2Se3) nanostructures at ambient pressure with hydrogen as a carrier gas. The nanostructures were synthesized on glass, silicon and mica substrates and the method yields a variety of nanostructures: nanowires, nanoribbons, nanoplatelets and nanoflakes. The materials analysis shows high chemical purity in all cases, without sacrificing the crystalline structure of Bi2Se3. Low-temperature measurements of the nanostructures indicate contributions from the surface states with a tunable carrier density. Samples synthesized on flexible mica substrates show no significant change in resistance upon bending, indicating robustness of as-grown Bi2Se3 nanostructures and their suitability for device applications.

cond-mat.mes-hall↗