arXiv subjects

Atsufumi Hirohata

Publications and source records attributed to Atsufumi Hirohata.

10 recordsLinked to original sources

arXiv2025

First-principles study of magnetic and spin-dependent transport properties of Mn2VZ (Z = Al, Ga) with negative spin polarization using a disordered local moment approach at finite temperatures

First-principles studies were performed on two Mn-based ferrimagnetic Heusler compounds with L21 and B2 structures, that is, Mn2VZ (Z = Al or Ga). The aim was to investigate their magnetic properties, electronic structures, and spin-resolved longitudinal conductivity at finite temperatures. Density functional theory (DFT) and functional integral theory were used. This approach incorporates transverse spin fluctuations through a disordered local moment method and the coherent potential approximation. In all cases, the calculated theoretical Curie temperatures were lower than the experimental values. Alloys with a B2 structures exhibit higher Curie temperatures compared to compounds with an L21 structures. Calculations of the temperature dependence of the density of states (DOS) indicate that the half-metallic electronic structure collapses owing to the renormalization of transverse spin fluctuations at a finite temperatures. However, the spin-resolved longitudinal conductivities demonstrated an improved spin polarization, particularly for Mn2VGa with an L21 structure. This result contradicts predictions based on the temperature-dependent DOS. The competition between the metallic transitions, which are caused by a modification of the DOS, and scattering coming from spin-disorder explains this phenomenon. Both of these effects are induced by transverse spin fluctuations. Additionally, the results show that half-metallicity, as defined by the DOS or conductivity, is inconsistent at finite temperatures. Finally, the total energy landscape of the paramagnetic state was calculated using the fixed spin moment method to investigate the strength of the longitudinal spin fluctuations. These results suggest that the alloys may exhibit strong longitudinal spin fluctuations.

cond-mat.mtrl-sci↗

arXiv2020

Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction

In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the theoretical prediction. This study focuses on the development of an almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films. We have investigated the degree of crystallisation in MTJ consisting of CoxMn100-x/MgO/CoxMn100-x (x = 66, 75, 83 and 86) in relation to their TMR ratios. Cross-sectional high resolution transmission electron microscopy (HRTEM) reveals that almost consistent lattice constants of these layers for 66 < x < 83 with maintaining large TMR ratios of 229% at RT, confirming the soft nature of the CoxMn100-x layer with some dislocations at the MgO/Co75Mn25 interfaces. For x = 86, on the other hand, the TMR ratio is found to be reduced to 142% at RT, which is partially attributed to the increased number of the dislocations at the MgO/Co86Mn14 interfaces and amorphous grains identified in the MgO barrier. Ab-initio calculations confirm the crystalline deformation stability across a broad compositional range in CoMn, proving the advantage of a strain-free interface for much larger TMR ratios.

cond-mat.mtrl-sci↗

arXiv2020

High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions

Co-rich Co$_{1-x}$Mn$_x$ alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration $x$ in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the $x$ = 0.25 bcc alloy electrodes [Kunimatsu et al., Appl. Phys. Express 13, 083007 (2020)]. Here, we report systematic study of structure and magnetism for epitaxial thin films as well as the TMR effect in MgO(001)-barrier MTJs with electrodes comprising those bcc films. The single phase bcc Co$_{1-x}$Mn$_x$(001) films were pseudomorphically grown on Cr(001) for 0.14 < $x$ < 0.50 with a sputtering technique. The magnetization was larger than that of pure Co for $x$ = 0.14-0.25 and deceased with further increasing $x$. This behavior mainly stemmed from the composition dependence of magnetic moment of Mn that exceeded 2 $μ_B$ at the maximum, unveiled by X-ray magnetic circular dichroism. Correspondingly, within the range of 0.25 < $x$ < 0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K) as $x$ increased. We discussed the relationship between the magnetism and high TMR ratio with different $x$ with the aid of the ab-initio band structure calculations.

cond-mat.mtrl-sci↗

arXiv2020

Spin Current Generation by a Surface Plasmon Polariton

Surface plasmon polariton (SPP) is an electromagnetic wave which is tightly localised beyond the diffraction limit at metallic surfaces. Recently, it is theoretically proposed that the angular momentum conversion between the SPP and electrons. In this work, we have successfully measured SPP induced spin currents, which proves the fact that the angular momenta are interconverted. Such conversion from light to a spin current can be used as a coupler in a next generation spintronic computing with optical data transfer or storage.

cond-mat.mes-hall↗

arXiv2019

Revealing the importance of interfaces for pure spin current transport

Spin transport phenomena underpin an extensive range of spintronic effects. In particular spin transport across interfaces occurs in most device concepts, but is so far poorly understood. As interface properties strongly impact spin transport, one needs to characterize and correlate them to the fabrication method. Here we investigate pure spin current transport across interfaces and connect this with imaging of the interfaces. We study the detection of pure spin currents via the inverse spin Hall effect in Pt and the related spin current absorption by Pt in Py-Cu-Pt lateral spin valves. Depending on the fabrication process, we either find a large (inverse) spin Hall effect signal and low spin absorption by Pt or vice versa. We explain these counter-intuitive results by the fabrication induced varying quality of the Cu/Pt interfaces, which is directly revealed via a special scanning electron microscopy technique for interface imaging and correlated to the spin transport.

cond-mat.mtrl-sci↗

arXiv2019

Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

cond-mat.mtrl-sci↗

arXiv2017

Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices

We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with low interface roughnesses of 1-3 Å, which is crucial for the preparation of working tunnelling barriers. Using Fe as a ferromagnetic electrode material we prepared magnetic tunneling junctions and measured the magnetoresistance. We find a sizeable maximum magnetoresistance value of 135%, which is comparable to other common Fe based MTJ systems.

cond-mat.mtrl-sci↗

arXiv2015

Roadmap for Emerging Materials for Spintronic Device Applications

The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for example as a cell for a magnetic random access memory and spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarised electrons efficiently into a non-magnet. We have accordingly identified 2 key properties to be achieved by developing new magnetic materials for future spintronic devices: (1) Half-metallicity at room temperature (RT); (2) Perpendicular anisotropy in nano-scale devices at RT. For the first property, 5 major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: Heusler alloys, ferrites, rutiles, perovskites and dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level EF only for its minority spins, achieving 100% spin polarisation at EF. We have also evaluated L10-alloys and D022-Mn-alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarisation. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations and interdisciplinary applications within 35 years time scale.

cond-mat.mtrl-sci↗

arXiv2014

Investigation of the temperature-dependence of ferromagnetic resonance and spin waves in Co2FeAl0.5Si0.5

Co2FeAl0.5Si0.5 (CFAS) is a Heusler compound that is of interest for spintronics applications, due to its high spin polarization and relatively low Gilbert damping constant. In this study, the behavior of ferromagnetic resonance as a function of temperature was investigated in CFAS, yielding a decreasing trend of damping constant as the temperature was increased from 13 to 300 K. Furthermore, we studied spin waves in CFAS using both frequency domain and time domain techniques, obtaining group velocities and attenuation lengths as high as 26 km/s and 23.3 um, respectively, at room temperature.

cond-mat.mtrl-sci↗

arXiv2012

Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix

Tunneling magnetoresistance (TMR) via oxides or molecules includes fruitful physics, such as spin filtering and hybridized interface states, in addition to various practical applications using large TMR ratio at room temperature. Then, a larger TMR effect with a new fundamental physics is awaited because further progress on spintronics can be realized. Here we report a discovery of a gigantic TMR ratio of 1,400,000% in a C60-Co nanocomposite spin device. The observed effect is induced by a combination of a Coulomb blockade effect and a novel magnetic switching effect. Theoretical investigation reveals that an electric field and a magnetic field control the magnetization and the electronic charging state, respectively, of the Co nanoparticles as in physics of multiferroicity.

cond-mat.mtrl-sci↗