arXiv subjects

Atsushi Tsukazaki

Publications and source records attributed to Atsushi Tsukazaki.

At least 37 records · Page 2Linked to original sources

arXiv2023

Kondo effect in electrostatically defined ZnO quantum dots

Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO.

cond-mat.mes-hall↗

arXiv2023

Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator

Surface states of a topological insulator demonstrate interesting quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the quantum magnetoelectric effect. Fermi energy tuning plays a role in inducing phase transitions and developing future device functions. Here, we report on controlling the topological phases in a dual-gate field-effect transistor of a semi-magnetic topological insulator heterostructure. The heterostructure consists of magnetized one-surface and non-magnetic other-surface. By tuning the Fermi energy to the energy gap of the magnetized surface, the Hall conductivity $σ_{xy}$ becomes close to the half-integer quantized Hall conductivity $e^2/2h$, exemplifying parity anomaly. The dual-gate control enables the band structure alignment to the two quantum Hall states with $σ_{xy} = e^2/h$ and 0 under a strong magnetic field. These states are topologically equivalent to the QAH and axion insulator states, respectively. Precise and independent control of the band alignment of the top and bottom surfaces successively induces various topological phase transitions among the QAH, axion insulator, and parity anomaly states in magnetic topological insulators.

cond-mat.mes-hall↗

arXiv2022

Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase

Co$_{3}$Sn$_{2}$S$_{2}$ (CSS) is one of the shandite compounds and becomes a magnetic Weyl semimetal candidate below the ferromagnetic phase transition temperature ($\textit{T}_\textrm{C}$). In this paper, we investigate the temperature ($\textit{T}$) dependence of conversion between charge current and spin current for the CSS thin film by measuring the spin-torque ferromagnetic resonance (ST-FMR) for the trilayer consisting of CSS / Cu / CoFeB. Above $\textit{T}_\textrm{C}$ ~ 170 K, the CSS / Cu / CoFeB trilayer exhibits the clear ST-FMR signal coming from the spin Hall effect in the paramagnetic CSS and the anisotropic magnetoresistance (AMR) of CoFeB. Below $\textit{T}_\textrm{C}$, on the other hand, it is found that the ST-FMR signal involves the dc voltages ($\textit{V}_\textrm{dc}$) not only through the AMR but also through the giant magnetoresistance (GMR). Thus, the resistance changes coming from both AMR and GMR should be taken into account to correctly understand the characteristic field angular dependence of $\textit{V}_\textrm{dc}$. The spin Hall torque generated from the ferromagnetic CSS, which possesses the same symmetry as that for spin Hall effect, dominantly acts on the magnetization of CoFeB. A definite increase in the spin-charge conversion efficiency ($ξ$) is observed at $\textit{T}$ < $\textit{T}_\textrm{C}$, indicating that the phase transition to the ferromagnetic CSS promotes the highly efficient spin-charge conversion. In addition, our theoretical calculation shows the increase in spin Hall conductivity with the emergence of magnetic moment at $\textit{T}$ < $\textit{T}_\textrm{C}$, which is consistent with the experimental observation.

cond-mat.mes-hall↗

arXiv2022

Nonreciprocal electrical transport in multiferroic semiconductor (Ge,Mn)Te

We have investigated the nonreciprocal electrical transport, that is a nonlinear resistance effect depending on the current direction, in multiferroic Rashba semiconductor (Ge,Mn)Te. Due to coexistence of ferromagnetic and ferroelectric orders, (Ge,Mn)Te provides a unique platform for exploring the nonreciprocal electrical transport in a bulk form. (Ge,Mn)Te thin films shows a large nonreciprocal resistance compared to GeTe, the nonmagnetic counterpart with the same crystal structure. The magnetic-field-angle dependence of the nonreciprocal resistance is maximized when magnetic field is orthogonal to both current and electric polarization, in accord with the symmetry argument. From the analysis of temperature and magnetic field dependence, we deduce that inelastic scatterings of electrons mediated by magnons dominantly contribute to the observed nonreciprocal response. Furthermore, the nonreciprocal resistance is significantly enhanced by lowering hole density. The Fermi level dependence is attributed to the deformation of the Rashba band in which the spin-momentum locked single Fermi surface appears by exchange field from the in-plane magnetization. The present study provides a key insight to the mechanisms of novel transport phenomena caused by the interplay of ferroelectric and ferromagnetic orders in a semiconductor.

cond-mat.mtrl-sci↗

arXiv2022

Intercorrelated anomalous Hall and spin Hall effect in kagome-lattice Co$_3$Sn$_2$S$_2$-based shandite films

Magnetic Weyl semimetals (mWSMs) are characterized by linearly dispersive bands with chiral Weyl node pairs associated with broken time reversal symmetry. One of the hallmarks of mWSMs is the emergence of large intrinsic anomalous Hall effect. On heating the mWSM above its Curie temperature, the magnetism vanishes while exchange-split Weyl point pairs collapse into doubly-degenerated gapped Dirac states. Here, we reveal the attractive potential of these Dirac nodes in paramagnetic state for efficient spin current generation at room temperature via the spin Hall effect. Ni and In are introduced to separately substitute Co and Sn in a prototypal mWSM Co$_3$Sn$_2$S$_2$ shandite film and tune the Fermi level. Composition dependence of spin Hall conductivity for paramagnetic shandite at room temperature resembles that of anomalous Hall conductivity for ferromagnetic shandite at low temperature; exhibiting peak-like dependence centering around the Ni-substituted Co$_2$Ni$_1$Sn$_2$S$_2$ and undoped Co$_3$Sn$_2$S$_2$ composition, respectively. The peak shift is consistent with the redistribution of electrons' filling upon crossing the ferromagnetic-paramagnetic transition, suggesting intercorrelation between the two Hall effects. Our findings highlight a novel strategy for the quest of spin Hall materials, guided by the abundant experimental anomalous Hall effect data of ferromagnets in the literature.

cond-mat.mes-hall↗

arXiv2021

Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$

Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials.

cond-mat.mes-hall↗

arXiv2021

Two-dimensionality of metallic surface conduction in Co3Sn2S2 thin films

Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of sheet conductance, here we elucidate the dimensionality of the electrical conduction paths of a Weyl semimetal Co3Sn2S2. Under the ferromagnetic phase, the 2D conduction path clearly emerges in Co3Sn2S2 thin films, indicating a formation of the Fermi arcs projected from Weyl nodes. Comparison between 3D conductivity and 2D conductance provides the effective thickness of the surface conducting region being estimated to be approximately 20 nm, which is rather thicker than 5 nm in topological insulator Bi2Se3. This large value may come from the narrow gap at Weyl point and relatively weak spin-orbit interaction of the Co3Sn2S2. The emergent surface conduction will provide a pathway to activate quantum and spintronic transport features stemming from a Weyl node in thin-film-based devices.

cond-mat.mtrl-sci↗

arXiv2021

Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi

A chiral compound FeSi is a nonmagnetic narrow-gap insulator, exhibiting peculiar charge and spin dynamics beyond a simple band-structure picture. Those unusual features have been attracting renewed attention from topological aspects. Although a signature of surface conduction was indicated according to size-dependent resistivity in bulk crystals, its existence and topological properties remain elusive. Here we demonstrate an inherent surface ferromagnetic-metal state of FeSi thin films and its strong spin-orbit-coupling (SOC) properties through multiple characterizations of the two-dimensional (2D) conductance, magnetization and spintronic functionality. Terminated covalent-bonding orbitals constitute the polar surface state with momentum-dependent spin textures due to Rashba-type spin splitting, as corroborated by unidirectional magnetoresistance measurements and first-principles calculations. As a consequence of the spin-momentum locking, non-equilibrium spin accumulation causes magnetization switching. These surface properties are closely related to the Zak phase of the bulk band topology. Our findings propose another route to explore noble-metal-free materials for SOC-based spin manipulation.

cond-mat.str-el↗

arXiv2021

Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: from topological crystalline insulator and polar semimetal to superconductor

Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such as topological crystalline insulator, topological semimetal, and superconductivity. For the samples with large Sn compositions (x > 0.5), hole density increases with In composition (y), which results in the appearance of superconductivity. On the other hand, for those with small Sn compositions (x < 0.5), increase in In composition reduces the hole density and changes the carrier type from p-type to n-type. In a narrow region centered at (x, y) = (0.16, 0.07) where the n-type carriers are slightly doped, charge transport with high mobility exceeding 5,000 cm$^{2}$V$^{-1}$s$^{-1}$ shows up, representing the possible semimetal states. In those samples, the optical second harmonic generation measurement shows the breaking of inversion symmetry along the out-of-plane [111] direction, which ensures the presence of polar semimetal state. The thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te materials systems with a variety of electronic states would become a promising materials platform for the exploration of novel quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2021

Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions

The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comprehensive analysis of the dependence of electronic transport on temperature, carrier density, in-plane and perpendicular magnetic fields, and voltage bias, we provide evidence for the existence of competing correlated metallic and insulating states with varying degrees of spin polarization. Our system features an unprecedented level of agreement with the state-of-the-art Quantum Monte Carlo phase diagram of the ideal jellium model, including a Wigner crystallization transition at a value of the interaction parameter $r_s\sim 30$ and the absence of a pure Stoner transition. In-plane field dependence of transport reveals a new low temperature state with partial spin polarization separating the spin unpolarized metal and the Wigner crystal, which we examine against possible theoretical scenarios such as an anti-ferromagnetic crystal, Coulomb induced micro-emulsions, and disorder driven puddle formation.

cond-mat.str-el↗

arXiv2020

First-principles investigation of magnetic and transport properties in hole-doped shandite compounds Co$_3$In$_x$Sn$_{2-x}$S$_2$

Co-based shandite Co$_3$Sn$_2$S$_2$ is a representative example of magnetic Weyl semimetals showing rich transport phenomena. We thoroughly investigate magnetic and transport properties of hole-doped shandites Co$_3$In$_x$Sn$_{2-x}$S$_2$ by first-principles calculations. The calculations reproduce nonlinear reduction of anomalous Hall conductivity with doping In for Co$_3$Sn$_2$S$_2$, as reported in experiments, against the linearly decreased ferromagnetic moment within virtual crystal approximation. We show that a drastic change in the band parity character of Fermi surfaces, attributed to the nodal rings lifted energetically with In-doping, leads to strong enhancement of anomalous Nernst conductivity with reversing its sign in Co$_3$In$_x$Sn$_{2-x}$S$_2$.

cond-mat.str-el↗

arXiv2020

Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet

The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle respectively reach 40,000 Ω-1cm-1 and 18 % in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally-excited spin-clusters with scalar spin chirality, which is corroborated by the temperature-magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.

cond-mat.mtrl-sci↗

arXiv2020

Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$

In the quest for quantum spin liquids, thin films are expected to open the way for the control of intricate magnetic interactions in actual materials by exploiting epitaxial strain and two-dimensionality. However, materials compatible with conventional thin-film growth methods have largely remained undeveloped. As a promising candidate towards the materialization of quantum spin liquids in thin films, we here present a robust ilmenite-type oxide with a honeycomb lattice of edge-sharing IrO$_6$ octahedra artificially stabilized by superlattice formation with an ilmenite-type antiferromagnetic oxide MnTiO$_3$. The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO$_3$, having the atomic arrangement corresponding to ilmenite-type MnTiO$_3$ not discovered yet. By spin Hall magnetoresistance measurements, we found that antiferromagnetic ordering in the ilmenite Mn sublattice is suppressed by modified magnetic interactions in the MnO$_6$ planes via the IrO$_6$ planes. These findings lay the foundation for the creation of two-dimensional Kitaev candidate materials, accelerating the discovery of exotic physics and applications specific to quantum spin liquids.

cond-mat.mtrl-sci↗

arXiv2020

Current scaling of the topological quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator

We report a current scaling study of a quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator on the surface of a heterostructure film of magnetic topological insulators. The transition was observed by tilting the magnetization while measuring the Hall conductivity $σ_{xy}$. The transition curves of $σ_{xy}$ taken under various excitation currents cross each other at a single point, exemplifying a quantum critical behavior of the transition. The slopes of the transition curves follow a power law dependence of the excitation current, giving a scaling exponent. Combining with the result of the previous temperature scaling study, critical exponents $ν$ for the localization length and $p$ for the coherence length are separately evaluated as $ν$ = 2.8 $\pm$ 0.3 and $p$ = 3.3 $\pm$ 0.3.

cond-mat.mes-hall↗

arXiv2020

Signature of band inversion in the perovskite thin-film alloys BaSn$_{1-x}$Pb$_x$O$_3$

Perovskite oxides ABO$_3$ containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO$_3$, the semimetal BaPbO$_3$ is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-gap modification by systematic structural, optical, and transport measurements in BaSn$_{1-x}$Pb$_x$O$_3$ films. A sudden suppression of the conductivity and an enhancement of the weak antilocalization effect at $x$ = 0.9 indicate the presence of a singular point in the electronic structure as a signature of the band inversion. Our findings provide an intriguing platform for combining topological aspects and electron correlation in perovskite oxides based on band-gap engineering.

cond-mat.mtrl-sci↗

arXiv2019

Ordering phenomena of spin trimers accompanied by large geometrical Hall effect

The wavefuntion of conduction electrons moving in the background of a non-coplanar spin structure can gain a quantal phase - Berry phase - as if the electrons were moving in a strong fictitious magnetic field. Such an emergent magnetic field effect is approximately proportional to the solid angle subtended by the spin moments on three neighbouring spin sites, termed the scalar spin chirality. The entire spin chirality of the crystal, unless macroscopically canceled, causes the geometrical Hall effect of real-space Berry-phase origin, whereas the intrinsic anomalous Hall effect (AHE) in a conventional metallic ferromagnet is of the momentum-space Berry-phase origin induced by relativistic spin-orbit coupling (SOC). Here, we report the ordering phenomena of the spin-trimer scalar spin chirality and the consequent large geometrical Hall effect in the breathing kagomé lattice compound Dy$_3$Ru$_4$Al$_{12}$, where the Dy$^{3+}$ moments form non-coplanar spin trimers with local spin chirality. Using neutron diffraction, we show that the local spin chirality of the spin trimers as well as its ferroic/antiferroic orders can be switched by an external magnetic field, accompanying large changes in the geometrical Hall effect. Our finding reveals that systems composed of tunable spin trimers can be a fertile field to explore large emergent electromagnetic responses arising from real-space topological magnetic orders.

cond-mat.str-el↗

arXiv2019

Quantum anomalous Hall effect driven by magnetic proximity coupling in all-telluride based heterostructure

The quantum anomalous Hall effect (QAHE) is an exotic quantum phenomenon originating from dissipation-less chiral channels at the sample edge. While the QAHE has been observed in magnetically doped topological insulators (TIs), exploiting magnetic proximity effect on the TI surface from adjacent ferromagnet layers may provide an alternative approach to the QAHE by opening an exchange gap with less disorder than that in the doped system. Nevertheless, the engineering of a favorable heterointerface that realizes the QAHE based on the magnetic proximity effect remains to be achieved. Here, we report on the observation of the QAHE in a proximity coupled system of non-magnetic TI and ferromagnetic insulator (FMI). We have designed sandwich heterostructures of (Zn,Cr)Te/(Bi,Sb)2Te3/(Zn,Cr)Te that fulfills two prerequisites for the emergence of the QAHE; the formation of a sizable exchange gap at the TI surface state and the tuning of the Fermi energy into the exchange gap. The efficient proximity coupling in the all-telluride based heterostructure as demonstrated here will enable a realistic design of versatile tailor-made topological materials coupled with ferromagnetism, ferroelectricity, superconductivity, and so on.

cond-mat.mes-hall↗

arXiv2019

Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators

We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state.

cond-mat.mes-hall↗