SearcharxivSearch

arXiv subjects

Audrey Faricy

Publications and source records attributed to Audrey Faricy.

2 recordsLinked to original sources

Benchmarking the computational power of quantum computers

Quantum computing hardware is advancing rapidly toward utility-scale machines that will enable scientific breakthroughs. Many teams are pursuing distinct and difficult-to-compare routes to this goal, using different qubit technologies and logical architectures. Tracking progress toward quantum utility therefore requires rigorous benchmarks that measure computational capability relative to utility-scale challenge problems and enable fair comparison across disparate platforms. Here we demonstrate direct, cross-platform measurement of quantum computational capability using a new benchmark that quantifies the size of the largest computationally relevant quantum circuits that a machine can execute successfully and the speed at which it can execute them. We apply this quantum universal operation performance system (QUOPS) experimentally to leading processors from Quantinuum, Google, and IBM, computing directly on physical qubits. Translating state-of-the-art resource requirements for recognized challenge problems that represent useful quantum computation into effective QUOPS circuit sizes shows that computational capability must grow by 5 orders of magnitude, motivating fault-tolerant approaches. We use the same benchmark to assess the performance of a simple fault-tolerant logical-qubit processor implemented on up to eight [[7,1,3]]-encoded logical qubits using Quantinuum Helios-1, and project the growth of capability across successive generations of fault-tolerant quantum computers to show how QUOPS can track progress toward quantum scientific utility.

quant-ph

Magnetotransport Measurements on Isolated Polycrystalline Grains of Type-II Silicon Clathrate

The first low-temperature electronic transport characterization of individual polycrystalline grains of type-II silicon clathrate (Na$_x$Si$_{136}$, $x \ll 1$), isolated using microfabrication techniques, is reported. Structural characterization via Raman spectroscopy confirms that the isolated grains are largely devoid of amorphous silicon (a-Si). Temperature-dependent resistivity reveals multiple conduction regimes, including thermally activated freeze-out behavior and a transition to low-activation-energy transport at cryogenic temperatures, consistent with hopping conduction mechanisms. Hall measurements from 290 K to 3.5 K yield carrier concentration and mobility trends that correlate with the extracted activation energies, verifying $n$-type conduction. Additionally, gate-dependent conductivity measurements demonstrate electrostatic tunability at room temperature. Collectively, these results establish the magnetotransport parameters of single, isolated grains of type-II silicon clathrate and demonstrate the potential of this material for future quantum and optoelectronic devices.

cond-mat.mtrl-sci