arXiv subjects

Aurelien David

Publications and source records attributed to Aurelien David.

6 recordsLinked to original sources

arXiv2025

Optical properties of InGaN quantum wells: accurately modeling the effects of disorder

A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells. The model provides excellent agreement to experimental observations on various structures. This study clarifies the prevalent role played by disorder in optical features such as the luminescence lineshape, the Stokes shift, and the radiative rate. Finally, the relationship between disorder and the peculiar properties of long-wavelength InGaN emitters is investigated.

cond-mat.mtrl-sci↗

arXiv2021

Observation of long-range carrier diffusion in InGaN quantum wells, and implications from fundamentals to devices

Photoluminescence measurements on high-quality InGaN quantum wells reveal that carriers diffuse laterally to long distances at room temperature, up to tens of microns. This behavior, which shows a pronounced dependence on the excitation density, contrasts with the common expectation of a short diffusion length. The data is well explained by a diffusion model taking into account the full carrier recombination dynamics, obtained from time-resolved measurements. These observations have important implications for understanding the high efficiency of III-nitride emitters, but also to properly interpret photoluminescence experiments and to design efficient small-scale devices.

cond-mat.mtrl-sci↗

arXiv2019

Many-body effects in strongly-disordered III-nitride quantum wells: interplay between carrier localization and Coulomb interaction

The joint impact of Anderson localization and many-body interaction is observed in the optical properties of strongly-disordered III-nitride quantum wells, a system where the Coulomb interaction and the fluctuating potential are pronounced effects with similar magnitude. A numerical method is introduced to solve the 6-dimensional coupled Schrodinger equation in the presence of disorder and Coulomb interaction, a challenging numerical task. It accurately reproduces the measured absorption and luminescence dynamics of InGaN quantum wells at room-temperature: absorption spectra reveal the existence of a broadened excitonic peak, and carrier lifetime measurements show that luminescence departs from a conventional bimolecular behavior. These results reveal that luminescence is governed by the interplay between localization and Coulomb interaction, and provide practical insight in the physics of modern light-emitting diodes.

cond-mat.mtrl-sci↗

arXiv2018

Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap

Carrier lifetime measurements reveal that, contrary to common expectations, the high-current non-radiative recombination (droop) in III-Nitride light emitters is comprised of two contributions which scale with the cube of the carrier density: an intrinsic recombination --most likely standard Auger scattering-- and an extrinsic recombination which is proportional to the density of point defects. This second droop mechanism, which hasn't previously been observed, is likely caused by an impurity-assisted Auger process. Further, it is shown that longer-wavelength emitters suffer from higher point defect recombinations, in turn causing an increase in the extrinsic droop process. It is proposed that this effect leads to the green gap, and that point defect reduction is a strategy to both vanquish the green gap and more generally improve quantum efficiency at high current.

physics.app-ph↗

arXiv2017

Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells

The physical process driving low-current non-radiative recombinations in high-quality III-Nitride quantum wells is investigated. Lifetime measurements reveal that these recombinations scale with the overlap of the electron and hole wavefunctions and show weak temperature dependence, in contrast with common empirical expectations for Shockley-Read-Hall recombinations. A model of field-assisted multiphonon point defect recombination in quantum wells is introduced, and shown to quantitatively explain the data. This study provides insight on the high efficiency of III-Nitride light emitters.

cond-mat.mtrl-sci↗

arXiv2016

Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

cond-mat.mtrl-sci↗