arXiv subjects

Aurimas Sakanas

Publications and source records attributed to Aurimas Sakanas.

9 recordsLinked to original sources

arXiv2026

Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity

We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried heterostructure gain region from which lasing has been observed. Despite etching of the active region during cavity definition and the associated risk of surface-related nonradiative recombination, optically pumped devices exhibit a clear lasing threshold and a narrow linewidth. By systematically varying the BH size, we investigate how the lasing threshold depends on the active volume under optical pumping. The estimated intrinsic threshold under ideal carrier injection is 57 nW, comparable to values reported for single quantum-dot nanolasers, highlighting the potential of quantum-dot-scale buried heterostructures as deterministic, scalable gain media for nanophotonic lasers.

physics.optics↗

arXiv2025

Efficient passivation of III-As(P) photonic interfaces

Surface effects can significantly impact the performance of nanophotonic and quantum photonic devices, especially as the device dimensions are reduced. In this work, we propose and investigate a novel approach to surface passivation to mitigate these challenges in photonic nanostructures with III-As(P) quantum wells defined by a dry etching process. The nanostructures are annealed under the phosphine (PH$_3$) ambient inside a metal-organic vapor phase epitaxy chamber to eliminate surface and subsurface defects induced during the dry etching and subsequent oxidation of the etched sidewalls. Moreover, encapsulation of the active material with a wider bandgap material allows for maintaining the band structure of the device, mitigating band bending effects. Our findings reveal an almost order of magnitude reduction in the surface recombination velocity from $2 \times 10^3 \, \mathrm{cm/s}$ for the PH$_3$ annealing compared to $1.5 \times 10^4 \, \mathrm{cm/s}$ for the non-passivated structures and $5 \times 10^3 \, \mathrm{cm/s}$ for the standard method based on (NH$_4$)$_2$S wet treatment followed by Al$_2$O$_3$ encapsulation. A further reduction to $5 \times 10^2 \, \mathrm{cm/s}$ is achieved for the InP-regrown samples. Additionally, we develop a model accounting for the impact of surface charges in the analysis of time-resolved photoluminescence curves and demonstrate that the proposed passivation method effectively reduces the surface charge density on the sidewalls of the studied quantum well-based photonic nanostructures.

physics.optics↗

arXiv2024

High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band

Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.

quant-ph↗

arXiv2024

On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices

Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550$\,$nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of $4π$ and a high single-photon purity in terms of $g^{(2)}(0)=0.005(1)$ and $0.015(1)$ for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the $π$-pulse exceeding 80$\%$. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments we obtain a photon-indistinguishability of the full photon wave packet of up to $35(3)\%$, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.

quant-ph↗

arXiv2023

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $μ$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.

physics.optics↗

arXiv2023

Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots

Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.

cond-mat.mes-hall↗

arXiv2022

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 μA emitting at 1540 nm and operated at room temperature. The lasers are InP-based bonded on Si and comprise a buried heterostructure active region and lateral p-i-n junction. The static characteristics and the thermal properties of the lasers have been characterized. The effect of disorder and p-doping absorption on the Q-factor of passive cavities was studied. We also investigate the leakage current due to the lateral p-i-n geometry by comparing the optical and electrical pumping schemes.

physics.optics↗

arXiv2021

Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si

Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of $\sim10\%$. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of a single-photon generation with purity $\mathcal{P}>98\%$ at the liquid helium temperature and $\mathcal{P}=75\%$ at $80$ K.

cond-mat.mes-hall↗

arXiv2018

Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding

In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtained for the directly bonded wafer, with the alignment marks both formed and measured on the same InP layer side after bonding (equivalent to single-sided processing of the bonded layer). Under these conditions, multilayer exposure alignment accuracy is limited by the InP layer deformation after the initial pattern exposure mainly due to the mechanical wafer clamping in the e-beam cassette. Bonding-induced InP layer deformations dominate in cases of direct and BCB bonding when the alignment marks are formed on one InP wafer side, and measured after bonding and substrate removal from another (equivalent to double-sided processing of the bonded layer). The findings of this paper provide valuable insight into the origin of the multilayer exposure misalignment errors for the bonded III-V on Si wafers, and identify important measures that need to be taken to optimize the fabrication procedures for demonstration of efficient and high-performance on-chip photonic integrated devices.

physics.app-ph↗