arXiv subjects

Avik W. Ghosh

Publications and source records attributed to Avik W. Ghosh.

At least 55 records · Page 3Linked to original sources

arXiv2018

Atomic scale characterization of graphene p-n junctions for electron-optical applications

Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the doping profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two state-of-the-art graphene p-n junction geometries at the atomic scale, one with CMOS polySi gates and another with naturally cleaved graphite gates. Using spectroscopic imaging, we characterize the local doping profile across and along the p-n junctions. We find that realistic junctions exhibit non-ideality both in their geometry as well as in the doping profile across the junction. We show that the geometry of the junction can be improved by using the cleaved edge of van der Waals metals such as graphite to define the junction. We quantify the geometric roughness and doping profiles of junctions experimentally and use these parameters in Nonequilibrium Green's Function based simulations of focusing and collimation in these realistic junctions. We find that for realizing Veselago focusing, it is crucial to minimize lateral interface roughness which only natural graphite gates achieve, and to reduce junction width, in which both devices under investigation underperform. We also find that carrier collimation is currently limited by the non-linearity of the doping profile across the junction. Our work provides benchmarks of the current graphene p-n junction quality and provides guidance for future improvements.

cond-mat.mes-hall↗

arXiv2018

Machine learning electron correlation in a disordered medium

Learning from data has led to a paradigm shift in computational materials science. In particular, it has been shown that neural networks can learn the potential energy surface and interatomic forces through examples, thus bypassing the computationally expensive density functional theory calculations. Combining many-body techniques with a deep learning approach, we demonstrate that a fully-connected neural network is able to learn the complex collective behavior of electrons in strongly correlated systems. Specifically, we consider the Anderson-Hubbard (AH) model, which is a canonical system for studying the interplay between electron correlation and strong localization. The ground states of the AH model on a square lattice are obtained using the real-space Gutzwiller method. The obtained solutions are used to train a multi-task multi-layer neural network, which subsequently can accurately predict quantities such as the local probability of double occupation and the quasiparticle weight, given the disorder potential in the neighborhood as the input.

cond-mat.str-el↗

arXiv2018

Graphene Transistor Based on Tunable Dirac-Fermion-Optics

The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several examples of electronic devices based on Dirac fermion dynamics have been demonstrated, including Klein tunneling, negative refraction and specular Andreev reflection. In this work, we present a quantum switch based on analogous Dirac-fermion-optics (DFO), in which the angle dependence of Klein tunneling is explicitly utilized to build tunable collimators and reflectors for the quantum wave function of Dirac fermions. We employ a novel dual-source design with a single flat reflector, which minimizes diffusive edge scattering and suppresses the background incoherent transmission. Our gate-tunable collimator-reflector device design enables measurement of the net DFO contribution in the switching device operation. We measure a full set of transmission coefficients of DFO wavefunction between multiple leads of the device, separating the classical contribution from that of any disorder in the channel. Since the DFO quantum switch demonstrated in this work requires no explicit energy gap, the switching operation is expected to be robust against thermal fluctuations and inhomogeneity length scales comparable to the Fermi wavelength. We find our quantum switch works at an elevated temperature up to 230 K and large bias current density up to 102 A/m, over a wide range of carrier densities. The tunable collimator-reflector coupled with the conjugated source electrodes developed in this work provides an additional component to build more efficient DFO electronic devices.

cond-mat.mes-hall↗

arXiv2018

Phonon-mediated thermal transport at exponentially mass-graded interfaces: A computational study

We numerically investigate thermal transport at solid-solid interfaces with graded intermediate layers whose masses vary exponentially from one side to the other. Using Non-Equilibrium Green's Function and Non-Equilibrium Molecular Dynamics simulations, we show that an exponentially mass-graded junction with a finite thickness can result in 68\% of enhancement in thermal conductance larger compared to a single bridging layer (29\%) and a linear mass-graded junction (64\%) of similar thickness. We examine how the thermal conductance at such interfaces is influenced by geometric qualities and strength of anharmonicity. For geometric properties, we tested the effects from number of layers and the junction thickness. In the absence of anharmonicity, increasing the number of layers results in better elastic phonon transmission at each individual boundary, countered by the decrease of available conducting channels. Consequently, in the harmonic regime, conductance initially increases with number of layers due to better bridging, but quickly saturates. The presence of slight anharmonic effects (at ultra-low temperature T = 2 K) turns the saturation into a monotonically increasing trend. Anharmonic effects can facilitate interfacial thermal transport through the thermalization of phonons. At high temperature, however, the role of anharmonicity as a facilitator of interfacial thermal transport reverses. Strong anharmonicity introduces significant intrinsic resistance, overruling the enhancement in thermal conduction at the boundaries. Our analysis shows that in our model Lennard-Jones system, the influence of a mass-graded junction on thermal conductance is dominated by the phonon thermalization through anharmonic effects, while elastic phonon transmission plays a secondary role.

physics.app-ph↗

arXiv2018

Reservoir Computing based Neural Image Filters

Clean images are an important requirement for machine vision systems to recognize visual features correctly. However, the environment, optics, electronics of the physical imaging systems can introduce extreme distortions and noise in the acquired images. In this work, we explore the use of reservoir computing, a dynamical neural network model inspired from biological systems, in creating dynamic image filtering systems that extracts signal from noise using inverse modeling. We discuss the possibility of implementing these networks in hardware close to the sensors.

cs.CV↗

arXiv2018

Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance

We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we integrate the Wentzel-Kramers-Brillouin (WKB) tunneling current over the transverse modes. We extend the Simmons equation to finite temperature and non-rectangular barriers using a two-band model for the channel material and an analytical channel potential profile obtained from Poisson's equation. The two-band model is parametrized first principles by calibrating with hybrid Density Functional Theory calculations, and extended to random alloys with a band unfolding technique. Our quasi-analytical model shows quantitative agreement with ballistic quantum transport calculations. On top of the ballistic tunnel current we incorporate higher order processes arising at junctions coupling the bands, specifically interface trap-assisted tunneling and Auger generation processes. Our results suggest that both processes significantly impact the off-state characteristics of the TFETs - Auger in particular being present even for perfect interfaces. We show that our microscopic model can be used to quantify the TFET performance on the atomistic interface quality. Finally, we use our simulations to quantify circuit level metrics such as energy consumption.

cond-mat.mtrl-sci↗

arXiv2018

A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors

We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique bandstructure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted $PbSe|PbI_2$ interface, while electrons are trapped in the bulk of the film inter-grain regions. These flows together forms the 2-current theory of photoconduction that quantitatively captures the $I-V$ relationship in these films. To capture the effect of pixel scaling and minority carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise etc. that connect the detector performance metrics such as responsivity $\mathcal{R}$ and specific detectivity $\mathcal{D^*}$ intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital ROIC cell designs to simulate and optimize high performance FPAs which form a critical component in the rapidly expanding market of self-driven automotive, IoTs, security, and embedded applications.

cond-mat.mes-hall↗

arXiv2018

Hardware based Spatio-Temporal Neural Processing Backend for Imaging Sensors: Towards a Smart Camera

In this work we show how we can build a technology platform for cognitive imaging sensors using recent advances in recurrent neural network architectures and training methods inspired from biology. We demonstrate learning and processing tasks specific to imaging sensors, including enhancement of sensitivity and signal-to-noise ratio (SNR) purely through neural filtering beyond the fundamental limits sensor materials, and inferencing and spatio-temporal pattern recognition capabilities of these networks with applications in object detection, motion tracking and prediction. We then show designs of unit hardware cells built using complementary metal-oxide semiconductor (CMOS) and emerging materials technologies for ultra-compact and energy-efficient embedded neural processors for smart cameras.

cs.CV↗

arXiv2017

Computational Investigation of Inverse-Heusler compounds for Spintronics Applications

First-principles calculations of the electronic structure, magnetism and structural stability of inverse-Heusler compounds with the chemical formula \textit{X$_2$YZ} are presented and discussed with a goal of identifying compounds of interest for spintronics. Compounds for which the number of electrons per atom for \textit{Y} exceed that for \textit{X} and for which \textit{X} is one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, or Cu; \textit{Y} is one of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn; and \textit{Z} is one of Al, Ga, In, Si, Ge, Sn, P, As or Sb were considered. The formation energy per atom of each compound was calculated. By comparing our calculated formation energies to those calculated for phases in the Inorganic Crystal Structure Database (ICSD) of observed phases, we estimate that inverse-Heuslers with formation energies within 0.052 eV/atom of the calculated convex hull are reasonably likely to be synthesizable in equilibrium. The observed trends in the formation energy and relative structural stability as the \textit{X}, \textit{Y} and \textit{Z} elements vary are described. In addition to the Slater-Pauling gap after 12 states per formula unit in one of the spin channels, inverse-Heusler phases often have gaps after 9 states or 14 states. We describe the origin and occurrence of these gaps. We identify 14 inverse-Heusler semiconductors, 51 half-metals and 50 near half-metals with negative formation energy. In addition, our calculations predict 4 half-metals and 6 near half-metals to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for future spintronics applications.

cond-mat.mtrl-sci↗

arXiv2017

Reservoir Computing using Stochastic p-Bits

We present a general hardware framework for building networks that directly implement Reservoir Computing, a popular software method for implementing and training Recurrent Neural Networks and are particularly suited for temporal inferencing and pattern recognition. We provide a specific example of a candidate hardware unit based on a combination of soft-magnets, spin-orbit materials and CMOS transistors that can implement these networks. Efficient non von-Neumann hardware implementation of reservoir computers can open up a pathway for integration of temporal Neural Networks in a wide variety of emerging systems such as Internet of Things (IoTs), industrial controls, bio- and photo-sensors, and self-driving automotives.

cs.ET↗

arXiv2017

Graphene Klein tunnel transistors for high speed analog RF applications

We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electrons across each GPNJ, so that the lack of substantial overlap between transmission lobes across successive junctions creates a gate-tunable transport gap without significantly compromising the on-current. Electron scattering at the device edge tends to bleed parasitic states into the gap, but the resulting pseudogap is still sufficient to create a saturated output ($I_D-V_D$) characteristic and a high output resistance. The modulated density of states generates a higher transconductance ($g_m$) and unity current gain cut-off frequency ($f_T$) than GFETs. More significantly the high output resistance makes the unity power gain cut-off frequency ($f_{max}$) of GKTFETs considerably larger than GFETs, making analog GKTFET potentially useful for RF electronics. Our estimation shows the $f_T$/$f_{max}$ of a GKTFET with 1 $μ$m channel reaches 33 GHz/17 GHz, and scale up to 350 GHz/53 GHz for 100 nm channel (assuming a single, scalable trapezoidal gate). The $f_{max}$ of a GKTFET is 10 times higher than a GFET with the same channel length.

physics.app-ph↗

arXiv2017

Spintronic signatures of Klein tunneling in topological insulators

Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to detect for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. Based on transport models across a TIPNJ, we show that the asymmetry in the potentiometric signal between PP and PN junctions and its overall angular dependence serve as a direct signature of Klein tunneling.

cond-mat.mes-hall↗

arXiv2016

Optimizing the interfacial thermal conductance at gold-alkane junctions from 'First Principles'

We theoretically explore the influence of end-group chemistry (bond stiffness and mass) on the interfacial thermal conductance at a gold-alkane interface. We accomplish this using the Non-Equilibrium Green's Function (NEGF) coupled with first principle parameters in Density Functional Theory (DFT) within the harmonic approximation. Our results indicate that the interfacial thermal conductance is not a monotonic function of either chemical parameters, but instead maximizes at an optimal set of mass and bonding strength. This maximum is a result of the interplay between the overlap in local density of states of the device and that in the contacts, as well as the phonon group velocity. We also demonstrate the intrinsic relationship between the Diffusive Mismatch Model (DMM) and the properties from NEGF, and provide an approach to get DMM from first principles NEGF. By comparing the NEGF based DMM conductance and range of conductance while altering the mass and bonding strength, we show that DMM provides an upper bound for elastic transport in this dimensionally mismatched system. We thus have a prescription to enhance the thermal conductance of systems at low temperatures or at low dimensions where inelastic scattering is considerably suppressed.

cond-mat.mes-hall↗

arXiv2016

Computational Investigation of Half-Heusler Compounds for Spintronics Applications

We present first-principles density functional calculations of the electronic structure, magnetism, and structural stability of 378 $\textit{XYZ}$ half-Heusler compounds (with $X=$ Cr, Mn, Fe, Co, Ni, Ru, Rh, $Y=$ Ti, V, Cr, Mn, Fe, Ni, $Z=$ Al, Ga, In, Si, Ge, Sn, P, As, Sb). We find that a "Slater-Pauling density of states" with a gap or pseudogap at three states per atom below the gap in at least one spin channel is a common feature in half-Heusler compounds. We find that the presence of such a gap at the Fermi energy in one or both spin channels contributes greatly to the stability of a half-Heusler compound. We calculate the formation energy of each compound and systematically investigate its stability against all other phases in the Open Quantum Materials Database (OQMD). We represent the thermodynamic phase stability of each compound as its distance from the convex hull of stable phases in the respective chemical space and show that the hull distance of a compound is a good measure of the likelihood of its experimental synthesis. We identify 26 18-electron semiconductors, 45 half-metals, and 34 near half-metals with negative formation energy, that follow the Slater-Pauling rule of three electrons per atom. Our calculations predict new thermodynamically stable semiconducting phases NiScAs, RhTiP, and RuVAs, which merit further experimental exploration. Further, two interesting zero-moment half-metals, CrMnAs and MnCrAs, are calculated to have negative formation energy. In addition, our calculations predict a number of new, hitherto unreported, semiconducting (e.g., CoVGe, FeVAs), half-metallic (e.g., RhVSb), near half-metallic (e.g., CoFeSb, CoVP) half-Heusler compounds to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for various spintronics applications.

cond-mat.mtrl-sci↗

arXiv2016

Effects of bulk and interfacial anharmonicity on thermal conductance at solid/solid interfaces

We present the results of classical molecular dynamics simulations to assess the relative contributions to interfacial thermal conductance from inelastic phonon processes at the interface and in the adjacent bulk materials. The simulated system is the prototypical interface between argon and "heavy argon" crystals, which enables comparison with many past computational studies. We run simulations interchanging the Lennard-Jones potential with its harmonic approximation to test the effect of anharmonicity on conductance. The results confirm that the presence of anharmonicity is correlated with increasing thermal conductance with temperature, which supports conclusions from prior experimental and theoretical work. However, in the model Ar/heavy-Ar system, anharmonic effects at the interface itself contribute a surprisingly small part of the total thermal conductance. The larger fraction of the thermal conductance at high temperatures arises from anharmonic effects away from the interface. These observations are supported by comparisons of the spectral energy density, which suggest that bulk anharmonic processes increase interfacial conductance by thermalizing energy from modes with low transmission to modes with high transmission.

cond-mat.mtrl-sci↗

arXiv2016

Design rules for interfacial thermal conductance - building better bridges

We study the thermal conductance across solid-solid interfaces as the composition of an intermediate matching layer is varied. In absence of phonon-phonon interactions, an added layer can make the interfacial conductance increase or decrease depending on the interplay between (1) an increase in phonon transmission due to better bridging between the contacts, and (2) a decrease in the number of available conduction channels that must conserve their momenta transverse to the interface. When phonon-phonon interactions are included, the added layer is seen to aid conductance when the decrease in resistances at the contact-layer boundaries compensate for the additional layer resistance. For the particular systems explored in this work, the maximum conductance happens when the layer mass is close to the geometric mean of the contact masses. The surprising result, usually associated with coherent antireflection coatings, follows from a monotonic increase in the boundary resistance with the interface mass ratio. This geometric mean condition readily extends to a compositionally graded interfacial layer with an exponentially varying mass that generates the thermal equivalent of a broadband impedance matching network.

cond-mat.mes-hall↗

arXiv2016

Numerical Fokker-Planck study of stochastic write error slope in spin torque switching

This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is discussed in detail to enable better device engineering and optimization. Finally a 2D FPE tool is demonstrated that extends the applicability of FPE to write error in non PMA systems with built-in asymmetry.

cond-mat.mes-hall↗

arXiv2016

Electron optics with ballistic graphene junctions

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Moreover ballistic transport over micron length scales at ambient temperature has been realized, providing an ideal platform to realize a new generation of device based on electron lensing. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snells law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing novel electron optics based on graphene pn junctions.

cond-mat.mes-hall↗