arXiv subjects

Avinash Kumar Chaurasiya

Publications and source records attributed to Avinash Kumar Chaurasiya.

9 recordsLinked to original sources

arXiv2026

Reconfigurable field-free spin Hall nano-oscillators enabled by crystallographic anisotropy in epitaxial Co/Pt

Spin Hall nano-oscillators (SHNOs) are nanoscale microwave sources for wireless communication, neuromorphic computing and oscillator-based Ising machines, but conventional devices require a global magnetic bias. Here we replace this bias through crystallographic anisotropy in epitaxial Co/Pt. Growth of hcp Co with its c-axis in the film plane produces an anisotropy field of about 0.36 T and enables field-free auto-oscillations above 10 GHz in nanoconstriction SHNOs. The active current polarity is selected by the remanent magnetization, providing nonvolatile reconfiguration of the oscillation state. Micro-focused Brillouin light scattering confirms that the nonlinear response is confined to the nanoconstriction region. Lithographic control of the angle between the current and anisotropy axes tunes the excitation threshold and drives two spectral branches from separated modes to a dominant single branch, consistent with mutual synchronization. These results establish epitaxial crystallographic anisotropy as a route to reconfigurable field-free spintronic oscillators and oscillator networks.

cond-mat.mes-hall↗

arXiv2025

Ultra-large mutually synchronized networks of 10 nm spin Hall nano-oscillators

While mutually interacting spin Hall nano-oscillators (SHNOs) hold great promise for wireless communication, neural networks, neuromorphic computing, and Ising machines, the highest number of synchronized SHNOs remains limited to $N$ = 64. Using ultra-narrow 10 and 20-nm nano-constrictions in W-Ta/CoFeB/MgO trilayers, we demonstrate mutually synchronized SHNO networks of up to $N$ = 105,000. The microwave power and quality factor scale as $N$ with new record values of 9 nW and $1.04 \times 10^6$, respectively. An unexpectedly strong array size dependence of the frequency-current tunability is explained by magnon exchange between nano-constrictions and magnon losses at the array edges, further corroborated by micromagnetic simulations and Brillouin light scattering microscopy. Our results represent a significant step towards viable SHNO network applications in wireless communication and unconventional computing.

cond-mat.mes-hall↗

arXiv2024

Ultra-low-current-density single-layer magnetic Weyl semimetal spin Hall nano-oscillators

Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $σ_{\rm xy}=1.35\times10^{5}$ $Ω^{-1} m^{-1}$ and the anomalous Hall angle, $θ_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert damping constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{σ_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $Ω^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials.

cond-mat.mes-hall↗

arXiv2023

Ultra-low current 10 nm spin Hall nano-oscillators

Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of this problem and study how different seed layers can mitigate it. We find that an ultra-thin Al$_{2}$O$_{3}$ seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 $μ$A. In addition, the combination of electrical insulation and high thermal conductivity of the Al$_{2}$O$_{3}$ seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. Our state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or two-dimensional arrays.

cond-mat.mes-hall↗

arXiv2021

Mechanism of Spin-Orbit Torques in Platinum Oxide Systems

Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.

cond-mat.mes-hall↗

arXiv2021

Comparison of Spin-Wave Modes in Connected and Disconnected Artificial Spin Ice Nanostructures Using Brillouin Light Scattering Spectroscopy

Artificial spin ice systems have seen burgeoning interest due to their intriguing physics and potential applications in reprogrammable memory, logic and magnonics. Integration of artificial spin ice with functional magnonics is a relatively recent research direction, with a host of promising results. As the field progresses, direct in-depth comparisons of distinct artificial spin systems are crucial to advancing the field. While studies have investigated the effects of different lattice geometries, little comparison exists between systems comprising continuously connected nanostructures, where spin-waves propagate via dipole-exchange interaction, and systems with nanobars disconnected at vertices where spin-wave propagation occurs via stray dipolar-field. Gaining understanding of how these very different coupling methods affect both spin-wave dynamics and magnetic reversal is key for the field to progress and provides crucial system-design information including for future systems containing combinations of connected and disconnected elements. Here, we study the magnonic response of two kagome spin ices via Brillouin light scattering, a continuously connected system and a disconnected system with vertex gaps. We observe distinct high-frequency dynamics and magnetization reversal regimes between the systems, with key distinctions in spin-wave localization and mode quantization, microstate-trajectory during reversal and internal field-profiles. These observations are pertinent for the fundamental understanding of artificial spin systems and broader design and engineering of reconfigurable functional magnonic crystals.

cond-mat.mes-hall↗

arXiv2020

Direct measurement of interfacial Dzyaloshinskii-Moriya interaction at the MoS$_{\rm 2}$/Ni$_{80}$Fe$_{20}$ interface

We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/Ta system. A linear scaling of the DMI constant with the inverse of Py thickness indicates the interfacial origin of the observed DMI. We further observe an enhancement of DMI constant in three to four layer MoS$_{\rm 2}$/Py system (by 56$\%$) as compared to 2 layer MoS$_{\rm 2}$/Py which is caused by a higher density of MoO$_{\rm 3}$ defect species in the case of three to four layer MoS$_{\rm 2}$. The results open possibilities of spin-orbitronic applications utilizing the 2D-TMD based heterostructures.

physics.app-ph↗

arXiv2019

Direct Observation of Unusual Interfacial Dzyaloshinskii-Moriya Interaction in Graphene/NiFe/Ta Heterostructure

Graphene/ferromagnet interface promises a plethora of new science and technology. The interfacial Dzyaloshinskii Moriya interaction (iDMI) is essential for stabilizing chiral spin textures, which are important for future spintronic devices. Here, we report direct observation of iDMI in graphene/Ni80Fe20/Ta heterostructure from non-reciprocity in spin-wave dispersion using Brillouin light scattering (BLS) technique. Linear scaling of iDMI with the inverse of Ni80Fe20 thicknesses suggests primarily interfacial origin of iDMI. Both iDMI and spin-mixing conductance increase with the increase in defect density of graphene obtained by varying argon pressure during sputter deposition of Ni80Fe20. This suggests that the observed iDMI originates from defect-induced extrinsic spin-orbit coupling at the interface. The direct observation of iDMI at graphene/ferromagnet interface without perpendicular magnetic anisotropy opens new route in designing thin film heterostructures based on 2-D materials for controlling chiral spin structure such as skyrmions and bubbles, and magnetic domain-wall-based storage and memory devices.

cond-mat.mtrl-sci↗

arXiv2017

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Films

Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature and in zero external magnetic field employing magnetic force microscopy. The skyrmions are observed in a trilayer structure comprised of heavy metal (HM)/ferromagnet (FM)/Oxide interfaces which result in strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable choices of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results open up a new paradigm for designing room temperature spintronic devices based on skyrmions in FM continuous thin films.

cond-mat.mtrl-sci↗