arXiv subjects

Awadhesh Narayan

Publications and source records attributed to Awadhesh Narayan.

At least 91 records · Page 5Linked to original sources

arXiv2017

Finite size and volume effects in line node semimetals: a first-principles investigation

We systematically study the bulk and finite size effects on the band structure of prototypical line node materials using density functional theory based computations. For the bulk system, we analyze quantum oscillations with changes in the Fermi surface topology. We show that ultra thin slabs are gapped, with the first signatures of the line node appearing beyond a critical thickness. Further, motivated by possibility of tuning the bulk line node, we find that the line node radius is rather sensitive to bulk volume change. Based on this observation, we propose that application of pressure or suitable substrate engineering can be used as an effective means to control and tune the line node and the accompanying surface drumhead states.

cond-mat.mtrl-sci↗

arXiv2017

Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd3As2

Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the dominant role of surface transport. With the increase of magnetic field, the SdH oscillations further develop into quantum Hall state with non-vanishing longitudinal resistance. By tracking the oscillation frequency and Hall plateau, we observe a Zeeman-related splitting and extract the Landau level index as well as sub-band number. Different from conventional two-dimensional systems, this unique quantum Hall effect may be related to the quantized version of Weyl orbits. Our results call for further investigations into the exotic quantum Hall states in the low-dimensional structure of topological semimetals.

cond-mat.mtrl-sci↗

arXiv2017

Computation of the unifying thread in high temperature superconductors from first principles quantum Monte Carlo

It has long been a challenge to describe the origin of unconventional superconductivity. The two known examples with high Tc, based on iron and copper, have very different electronic structures, while other materials with similar electronic structure may not show superconductivity at all. In this paper, the authors show that by using high accuracy diffusion Monte Carlo calculations, the unconventional superconductors of both high Tc types form a cluster at intermediate spin-charge coupling. The spin-charge coupling may serve as a normal state marker for unconventional superconductivity, and provides evidence that unconventional superconductivity is due to interaction of charge with local spins in materials.

cond-mat.supr-con↗

arXiv2017

Quasiparticle interference and resonant states in normal and superconducting line nodal semimetals

We study impurity scattering in the normal and d-wave superconducting states of line nodal semimetals and show that, due to additional scattering phase space available for impurities on the surface, the quasiparticle interference pattern acquires an extended character instead of a discrete collection of delta function peaks. Moreover, using the T-matrix formalism, we demonstrate that the conventional behavior of a scalar impurity in a d-wave superconductor breaks down on the surface of a line nodal semimetal in the quasi flat band limit.

cond-mat.supr-con↗

arXiv2016

Evidence for pressure-induced node-pair annihilation in Cd3As2

As an intermediate state in the topological phase diagram, Dirac semimetals are of particular interest as a platform for studying topological phase transitions under external modulations. Despite a growing theoretical interest in this topic, it remains a substantial challenge to experimentally tune the system across topological phase transitions. Here, we investigate the Fermi surface evolution of Cd3As2 under high pressure through magnetotransport. A sudden change in Berry phase occurs at 1.3 GPa along with the unanticipated shrinkage of the Fermi surface, which occurs well below the structure transition point (~2.5 GPa). High pressure X-ray diffraction also reveals an anisotropic compression of the Cd3As2 lattice around a similar pressure. Corroborated by the first-principles calculations we show that an axial compression will shift the Dirac nodes towards the Brillouin zone center and eventually introduces a finite energy gap. The ability to tune the node position, a vital parameter of Dirac semimetals, can have dramatic impacts on the corresponding topological properties such as the Fermi arc surface states and the chiral anomaly. Our study demonstrates axial compression as an efficient approach for manipulating the band topology and exploring the critical phenomena near the topological phase transition in Cd3As2.

cond-mat.mtrl-sci↗

arXiv2016

Observation of quasi-two-dimensional Dirac fermions in ZrTe5

Since the discovery of graphene, layered materials have attracted extensive interests owing to their unique electronic and optical characteristics. Among them, Dirac semimetal, one of the most appealing categories, has been a long-sought objective in layered systems beyond graphene. Recently, layered pentatelluride ZrTe5 was found to host signatures of Dirac semimetal. However, the low Fermi level in ZrTe5 strongly hinders a comprehensive understanding of the whole picture of electronic states through photoemission measurements, especially in the conduction band. Here, we report the observation of Dirac fermions in ZrTe5 through magneto-optics and magneto-transport. By applying magnetic field, we observe a square-root-B dependence of inter-Landau-level resonance and Shubnikov-de Haas (SdH) oscillations with non-trivial Berry phase, both of which are hallmarks of Dirac fermions. The angular-dependent SdH oscillations show a clear quasi-two-dimensional feature with highly anisotropic Fermi surface and band topology, in stark contrast to the 3D Dirac semimetal such as Cd3As2. This is further confirmed by the angle-dependent Berry phase measurements and the observation of bulk quantum Hall plateaus. The unique band dispersion is theoretically understood: the system is at the critical point between a 3D Dirac semimetal and a topological insulator phase. With the confined interlayer dispersion and reducible dimensionality, our work establishes ZrTe5 as an ideal platform for exploring exotic physical phenomena of Dirac fermions.

cond-mat.mtrl-sci↗

arXiv2016

Tunable point nodes from line node semimetals via application of light

We propose that illumination with light provides a useful platform for creating tunable semimetals. We show that by shining light on semimetals with a line degeneracy, one can convert them to a point node semimetal. These point nodes are adjustable and their position can be controlled by simply rotating the incident light beam. We also discuss the implications of this change in Fermi surface topology, as manifested in transport observables.

cond-mat.mes-hall↗

arXiv2016

Computational and experimental investigation of unreported transition metal selenides and sulphides

Expanding the library of known inorganic materials with functional electronic or magnetic behavior is a longstanding goal in condensed matter physics and materials science. Recently, the transition metal chalchogenides including selenium and sulfur have been of interest because of their correlated-electron properties, as seen in the iron based superconductors and the transition metal dichalcogenides. However, the chalcogenide chemical space is less explored than that of oxides, and there is an open question of whether there may be new materials heretofore undiscovered. We perform a systematic combined theoretical and experimental search over ternary phase diagrams that are empty in the Inorganic Crystal Structure Database containing cations, transition metals, and one of selenium or sulfur. In these 27 ternary systems, we use a probabilistic model to reduce the likelihood of false negative predictions, which results in a list of 24 candidate materials. We then conduct a variety of synthesis experiments to check the candidate materials for stability. While the prediction method did obtain previously unknown compositions that are predicted stable within density functional theory, none of the candidate materials formed in our experiments. We come to the conclusion that these phase diagrams are "empty" in the case of bulk synthesis, but it remains a possibility that alternate synthesis routes may produce some of these phases.

cond-mat.mtrl-sci↗

arXiv2016

Class of Rashba ferroelectrics in hexagonal semiconductors

We present a class of Rashba systems in hexagonal semiconducting compounds, where an electrical control over spin-orbital texture is provided by their bulk ferroelectricity. Our first-principles calculations reveal a number of such materials with large Rashba coefficients. We, furthermore, show that strain can drive a topological phase transition in such materials, resulting in a ferroelectric topological insulating state. Our findings can open avenues for interplay between Rashba effect, ferroelectricity and topological phenomena.

cond-mat.mes-hall↗

arXiv2015

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

cond-mat.mtrl-sci↗

arXiv2015

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Floquet dynamics in two-dimensional semi-Dirac semimetals and three-dimensional Dirac semimetals

We study the photoresponse of two-dimensional semi-Dirac semimetals and three-dimensional Dirac semimetals to off-resonant circularly polarized light. For two-dimensional semi-Dirac semimetals we find that incident light does not open a gap in the spectrum, in contrast to the case of purely linear dispersion. For the three-dimensional case we find that applying a circularly polarized light, one can tune from a trivial insulator to three-dimensional Dirac semimetal with an inverted gap. We propose and show that application of light leads to an intriguing platform for generation, motion and merging of three-dimensional Dirac points.

cond-mat.mes-hall↗

arXiv2015

Single atom anisotropic magnetoresistance on a topological insulator surface

We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi$_2$Se$_3$ elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

cond-mat.mes-hall↗

arXiv2014

Ab-initio transport across Bismuth Selenide surface barriers

We investigate the effect of potential barriers in the form of step edges on the scattering properties of Bi$_2$Se$_3$(111) topological surface states by means of large-scale ab-initio transport simulations. Our results demonstrate the suppression of perfect backscattering, while all other scattering processes, which do not entail a complete spin and momentum reversal, are allowed. Furthermore, we find that the spin of the surface state develops an out of plane component as it traverses the barrier. Our calculations reveal the existence of quasi-bound states in the vicinity of the surface barriers, which appear in the form of an enhanced density of states in the energy window corresponding to the topological state. For double barriers we demonstrate the formation of quantum well states. To complement our first-principles results we construct a two-dimensional low-energy effective model and show that band bending plays a significant role in the scattering process. Our findings are discussed in the context of a number of recent experimental works.

cond-mat.mes-hall↗

arXiv2014

Topological tuning in three-dimensional Dirac semimetals

We study with first-principles methods the interplay between bulk and surface Dirac fermions in three dimensional Dirac semimetals. By combining density functional theory with the coherent potential approximation, we reveal a topological phase transition in Na$_3$Bi$_{1-x}$Sb$_{x}$ and Cd$_3$[As$_{1-x}$P$_x$]$_2$ alloys, where the material goes from a Dirac semimetal to a trivial insulator upon changing Sb or P concentrations. Tuning the composition allows us to engineer the position of the bulk Dirac points in reciprocal space. Interestingly, the phase transition coincides with the reversal of the band ordering between the conduction and valence bands.

cond-mat.mes-hall↗

arXiv2014

Phenomenology of Andreev reflection from first-principles transport theory

We study Andreev reflection in normal metal-superconductor junctions by using an extended Blonder-Tinkham-Klapwijk model combined with transport calculations based on density functional theory. Starting from a parameter-free description of the underlying electronic structure, we perform a detailed investigation of normal metal-superconductor junctions, as the separation between the superconductor and the normal metal is varied. The results are interpreted by means of transverse momentum resolved calculations, which allow us to examine the contributions arising from different regions of the Brillouin zone. Furthermore we investigate the effect of a voltage bias on the normal metal-superconductor conductance spectra. Finally, we consider Andreev reflection in carbon nanotubes sandwiched between normal and superconducting electrodes.

cond-mat.mes-hall↗

arXiv2014

Proximity induced topological state in graphene

The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of forming topologically protected interfaces between different materials. Here we propose that a topological phase can be transferred to graphene by proximity with the three-dimensional topological insulator Bi$_2$Se$_3$. By using density functional and transport theory we prove that, at the verge of the chemical bond formation, a hybrid state forms at the graphene/Bi$_2$Se$_3$ interface. The state has Dirac-cone-like dispersion at the $Γ$ point and a well-defined helical spin-texture, indicating its topologically protected nature. This demonstrates that proximity can transfer the topological phase from Bi$_2$Se$_3$ to graphene.

cond-mat.mes-hall↗

arXiv2014

Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions

We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS$_2$ are metallic and that Fe acts as an efficient spin injector into MoS$_2$ with an efficiency of about 45\%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness a maximum magnetoresistance of $\sim$300\% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed.

cond-mat.mes-hall↗