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Axel Lorke

Publications and source records attributed to Axel Lorke.

At least 19 recordsLinked to original sources

The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir

In quantum dots (QDs) the Auger recombination is a non-radiative scattering process in which the optical transition energy of a charged exciton (trion) is transferred to an additional electron leaving the dot. Electron tunneling from a reservoir is the competing process that replenishes the QD with an electron again. Here, we study the dependence of the tunneling and Auger recombintaion rate on the applied electric field using high-resolution time-resolved resonance fluorescence (RF) measurements. With the given p-i-n diode structure and a tunnel barrier between the electron reservoir and the QD of $45\,$nm, we measured a tunneling rate into the QD in the order of ms$^{-1}$. This rate shows a strong decrease by almost an order of magnitude for decreasing electric field, while the Auger emission rate decreases by a factor of five in the same voltage range. Furthermore, we study in detail the influence of the Auger recombination and the tunneling rate from the charge reservoir into the QD on the intensity and linewidth of the trion transition. Besides the well-known quenching of the trion transition, we observe in our time-resolved RF measurements a strong influence of the tunneling rate on the observed linewidth. The steady-state RF measurement yields a broadened trion transition of about $1.5\,$GHz for an Auger emission rate of the same order as the electron tunneling rate. In a non-equilibrium measurement, the Auger recombination can be suppressed, and a more than four times smaller linewidth of $340\,$MHz ($1.4\,$${\mu}$eV) is measured.

cond-mat.mes-hall

Spatio-Temporal Electron Propagation Dynamics in Au/Fe/MgO(001) in nonequilibrium: Revealing Single Scattering Events and the Ballistic Limit

Understanding the microscopic spatio-temporal dynamics of nonequilibrium charge carriers in heterosystems promises optimization of process and device design towards desired energy transfer. Hot electron transport is governed by scattering with other electrons, defects, and bosonic excitations. Analysis of the energy dependence of scattering pathways and identification of diffusive, super-diffusive, and ballistic transport regimes are current challenges. We determine in femtosecond time-resolved two-photon photoelectron emission spectroscopy the energy-dependent change of the electron propagation time through epitaxial Au/Fe(001) heteostructures as a function of Au layer thickness for energies of 0.5 to \unit[2.0]{eV} above the Fermi energy. We describe the laser-induced nonequilibrium electron excitation and injection across the Fe/Au interface using real-time time-dependent density functional theory and analyze the electron propagation through the Au layer by microscopic electron transport simulations. We identify ballistic transport of minority electrons at energies with a nascent, optically excited electron population which is determined by the combination of photon energy and the specific electronic structure of the material. At lower energy, super-diffusive transport with 1 to 4 scattering events dominates. The effective electron velocity accelerates from 0.3 to \unit[1]{nm/fs} with an increase in the Au layer thickness from 10 to 100~nm. This phenomenon is explained by electron transport that becomes preferentially aligned with the interface normal for thicker Au layers, which facilitates electron momentum / energy selection by choice of the propagation layer thickness.

cond-mat.mtrl-sci

Unraveling spin dynamics from charge fluctuations

The use of single electron spins in quantum dots as qubits requires detailed knowledge about the processes involved in their initialization and operation as well as their relaxation and decoherence. In optical schemes for such spin qubits, spin-flip Raman as well as Auger processes play an important role, in addition to environment-induced spin relaxation. In this paper, we demonstrate how to quantitatively access all the spin-related processes in one go by monitoring the charge fluctuations of the quantum dot. For this, we employ resonance fluorescence and analyze the charge fluctuations in terms of waiting-time distributions and full counting statistics characterized by factorial cumulants.

cond-mat.mes-hall

Pushing the limits in real-time measurements of quantum dynamics

Time-resolved studies of quantum systems are the key to understand quantum dynamics at its core. The real-time measurement of individual quantum numbers as they switch between certain discrete values, well known as random telegraph signal, is expected to yield maximal physical insight. However, the signal suffers from both systematic errors, such as a limited time resolution and noise from the measurement apparatus, as well as statistical errors due to a limited amount of data. Here we demonstrate that an evaluation scheme based on factorial cumulants can reduce the influence of such errors by orders of magnitude. The error resilience is supported by a general theory for the detection errors as well as experimental data of single-electron tunnelling through a self-assembled quantum dot. Thus, factorial cumulants push the limits in the analysis of random telegraph data which represent a wide class of experiments in physics, chemistry, engineering and life sciences.

cond-mat.mes-hall

Post-processing of real-time quantum event measurements for an optimal bandwidth

Single electron tunneling and its transport statistics have been studied for some time using high precision charge detectors. However, this type of detection requires advanced lithography, optimized material systems and low temperatures (mK). A promising alternative, recently demonstrated, is to exploit an optical transition that is turned on or off when a tunnel event occurs. High bandwidths should be achievable with this approach, although this has not been adequately investigated so far. We have studied low temperature resonance fluorescence from a self-assembled quantum dot embedded in a diode structure. We detect single photons from the dot in real time and evaluate the recorded data only after the experiment, using post-processing to obtain the random telegraph signal of the electron transport. This is a significant difference from commonly used charge detectors and allows us to determine the optimal time resolution for analyzing our data. We show how this post-processing affects both the determination of tunneling rates using waiting-time distributions and statistical analysis using full-counting statistics. We also demonstrate, as an example, that we can analyze our data with bandwidths as high as 350 kHz. Using a simple model, we discuss the limiting factors for achieving the optimal bandwidth and propose how a time resolution of more than 1 MHz could be achieved.

cond-mat.mes-hall

Auger and spin dynamics in a self-assembled quantum dot

The Zeeman-split spin states of a single quantum dot can be used together with its optical trion transitions to form a spin-photon interface between a stationary (the spin) and a flying (the photon) quantum bit. Besides long coherence times of the spin state itself, the limiting decoherence mechanisms of the trion states are of central importance. We investigate here in time-resolved resonance fluorescence the electron and trion dynamics in a single self-assembled quantum dot in an applied magnetic field of up to $B = 10\,$T. The quantum dot is only weakly coupled to an electron reservoir with tunneling rates of about $1\,$ms$^{-1}$. Using this sample structure, we can measure, in addition to the spin-flip rate of the electron and the spin-flip Raman rate of the trion transition, the Auger recombination process, that scatters an Auger electron into the conduction band. The Auger effect destroys the radiative trion transition and leaves the quantum dot empty until an electron tunnels from the reservoir into the dot. The Auger recombination rate decreases by a factor of three from $γ_A=3\,μ$s$^{-1}$ down to $1\,μ$s$^{-1}$ in an applied magnetic field of $10\,$T in Faraday geometry. The combination of an Auger recombination event with subsequent electron tunneling from the reservoir can flip the electron spin and thus constitutes a previously unaccounted mechanism that limits spin coherence, an important resource for quantum technologies.

cond-mat.mes-hall

Electronic reconstruction and charge transfer in strained Sr$_2$CoIrO$_6$ double perovskite

The electronic, magnetic and optical properties of the double perovskite Sr$_2$CoIrO$_6$ (SCIO) under biaxial strain are explored in the framework of density functional theory (DFT) including a Hubbard $U$ term and spin-orbit coupling (SOC) in combination with absorption spectroscopy measurements on epitaxial thin films. While the end member SrIrO$_3$ is a semimetal with a quenched spin and orbital moment and bulk SrCoO$_3$ is a ferromagnetic (FM) metal with spin and orbital moment of 2.50 and 0.13 $μ_{B}$, respectively, the double perovskite SCIO emerges as an antiferromagnetic Mott insulator with antiparallel alignment of Co, Ir planes along the [110]-direction. Co exhibits a spin and enhanced orbital moment of $\sim 2.35-2.45$ and $0.31-$0.45 $μ_{B}$, respectively. Most remarkably, Ir acquires a significant spin and orbital moment of 1.21-1.25 and 0.13 $μ_{B}$, respectively. Analysis of the orbital occupation indicates an electronic reconstruction due to a substantial charge transfer from minority to majority spin states in Ir and from Ir to Co, signaling an Ir$^{4+δ}$, Co$^{4-δ}$ configuration. Biaxial strain, varied from -1.02% ($a_{\rm NdGaO_3}$) through 0% ($a_{\rm SrTiO_3}$) to 1.53% ($a_{\rm GdScO_3}$), influences in partcular the orbital polarization of the $t_{2g}$ states and leads to a nonmonotonic change of the band gap between 163 and 235 meV. The absorption coefficient reveals a two plateau fearure due to transitions from the valence to the lower lying narrow $t_{2g}$ and the higher lying broader $e_{g}$ bands. Inclusion of many body effects, in particular, excitonic effects by solving the Bethe-Salpeter equation (BSE), increases the band gap by $\sim0.2$ and improves the agreement with the measured spectrum concerning the position of the second peak at $\sim 2.6$ eV.

cond-mat.str-el

Internal Photo Effect from a Single Quantum Emitter

We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders of magnitude by adjusting the excitation intensity. Our findings show that a process that is well known in single atom spectroscopy (i.e. photo ionization) can also be observed in the solid state. The results also quantify an important, but mostly neglected, mechanism that may fundamentally limit the coherence times in solid-state quantum optical devices.

cond-mat.mes-hall

Real-time detection of every Auger recombination in a self-assembled quantum dot

Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time in the order of microseconds. Here, we use two-color laser excitation on the exciton and trion transition in resonance fluorescence on a single self-assembled quantum dot to monitor in real-time every quantum event of the Auger process. Full counting statistics on the random telegraph signal give access to the cumulants and demonstrate the tunability of the Fano factor from a Poissonian to a sub-Poissonian distribution by Auger-mediated electron emission from the dot. Therefore, the Auger process can be used to tune optically the charge carrier occupation of the dot by the incident laser intensity; independently from the electron tunneling from the reservoir by the gate voltage. Our findings are not only highly relevant for the understanding of the Auger process, it also demonstrates the perspective of the Auger effect for controlling precisely the charge state in a quantum system by optical means.

cond-mat.mes-hall

Patterning of diamond with 10 nm resolution by electron-beam-induced etching

We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was injected by a needle directly onto the sample surface. Using this versatile and low-damage technique, trenches with different depths were etched. Cross sections of each trench were obtained by focused ion beam milling and used to calculate the achieved aspect ratios. The developed technique opens up the possibility of mask- and resist-less patterning of diamond for nano-optical and electronic applications.

physics.app-ph

Analog Sauter-Schwinger effect in semiconductors for spacetime-dependent fields

The Sauter-Schwinger effect predicts the creation of electron-positron pairs out of the quantum vacuum via tunneling induced by a strong electric field. Unfortunately, as the required field strength is extremely large, this fundamental prediction of quantum field theory has not been verified experimentally yet. Here, we study under which conditions and approximations the interband tunneling in suitable semiconductors could be effectively governed by the same (Dirac) Hamiltonian, especially for electric fields which depend on space and time. This quantitative analogy would allow us to test some of the predictions (such as the dynamically assisted Sauter-Schwinger effect) in this area by means of these laboratory analogs.

cond-mat.mes-hall

Photoelectron generation and capture in the resonance fluorescence of a quantum dot

Time-resolved resonance fluorescence (RF) on a single self-assembled quantum dot (QD) is used to analyze the generation and capture of photoinduced free charge carriers. We directly observe the capture of electrons into the QD in an intensity reduction of the exciton transition. The exciton transition is quenched until the captured electron tunnels out of the dot again in the order of milliseconds. Our results demonstrate that even under resonant excitation, excited, free electrons are generated, which can negatively influence the optical properties of a QD. This detrimental effect has been neglected before for dots that are optimized for maximum efficiency and minimum spectral diffusion.

cond-mat.mes-hall

Auger recombination in self-assembled quantum dots: Quenching and broadening of the charged exciton transition

In quantum dots (QDs) the Auger recombination is a non-radiative process, where the electron-hole recombination energy is transferred to an additional carrier. It has been studied mostly in colloidal QDs, where the Auger recombination time is in the ps range and efficiently quenches the light emission. In self-assembled QDs, on the other hand, the influence of Auger recombination on the optical properties is in general neglected, assuming that it is masked by other processes such as spin and charge fluctuations. Here, we use time-resolved resonance fluorescence to analyze the Auger recombination and its influence on the optical properties of a single self-assembled QD. From excitation-power dependent measurements, we find a long Auger recombination time of about 500 ns and a quenching of the trion transition by about 80 percent. Furthermore, we observe a broadening of the trion transition linewidth by up to a factor of two. With a model based on rate equations, we are able to identify the interplay between tunneling and Auger rate as the underlying mechanism for the reduced intensity and the broadening of the linewidth. This demonstrates that self-assembled QDs can serve as an ideal model system to study how the charge recapture process, given by the band-structure surrounding the confined carriers, influences the Auger process. Our findings are not only relevant for improving the emission properties of colloidal QD-based emitters and dyes, which have recently entered the consumer market. They are also of interest for more visionary applications, such as quantum information technologies, based on self-assembled quantum dots.

cond-mat.mes-hall

Edge magnetotransport in graphene: A combined analytical and numerical study

The current flow along the boundary of graphene stripes in a perpendicular magnetic field is studied theoretically by the nonequilibrium Green's function method. In the case of specular reflections at the boundary, the Hall resistance shows equidistant peaks, which are due to classical cyclotron motion. When the strength of the magnetic field is increased, anomalous resistance oscillations are observed, similar to those found in a nonrelativistic 2D electron gas [New. J. Phys. 15:113047 (2013)]. Using a simplified model, which allows to solve the Dirac equation analytically, the oscillations are explained by the interference between the occupied edge states causing beatings in the Hall resistance. A rule of thumb is given for the experimental observability. Furthermore, the local current flow in graphene is affected significantly by the boundary geometry. A finite edge current flows on armchair edges, while the current on zigzag edges vanishes completely. The quantum Hall staircase can be observed in the case of diffusive boundary scattering. The number of spatially separated edge channels in the local current equals the number of occupied Landau levels. The edge channels in the local density of states are smeared out but can be made visible if only a subset of the carbon atoms is taken into account.

cond-mat.mes-hall

Giant magneto-photoelectric effect in suspended graphene

We study the optical response of a suspended graphene field-effect transistor in magnetic fields of up to 9 T (quantum Hall regime). With an illumination power of only 3 μW, we measure a photocurrent of up to 400 nA, corresponding to a photo-responsivity of 0.14 A/W, which we believe to be the highest value ever measured in single-layer graphene. We estimate that every absorbed photon creates more than 8 electron-hole pairs, which demonstrates highly effective carrier multiplication. As suggested by the dependence of the photocurrent on gate voltage and magnetic field, we propose a ballistic two-stage mechanism where the incident photons create primary charge carriers which then excite secondary charge carriers in the chiral edge states via Auger-type inelastic Coulomb scattering processes at the graphene edge.

cond-mat.mes-hall

Asymmetry of charge relaxation times in quantum dots: The influence of degeneracy

Using time-resolved transconductance spectroscopy, we study the tunneling dynamics between a two-dimensional electron gas (2DEG) and self-assembled quantum dots (QDs), embedded in a field-effect transistor structure. We find that the tunneling of electrons from the 2DEG into the QDs is governed by a different time constant than the reverse process, i.e., tunneling from the QDs to the 2DEG. This asymmetry is a clear signature of Coulomb interaction and makes it possible to determine the degeneracy of the quantum dot orbitals even when the individual states cannot be resolved energetically because of inhomogeneous broadening. Our experimental data can be qualitatively explained within a master-equation approach.

cond-mat.mes-hall

Magnetotransport along a boundary: From coherent electron focusing to edge channel transport

We study theoretically how electrons, coherently injected at one point on the boundary of a two-dimensional electron system, are focused by a perpendicular magnetic field $B$ onto another point on the boundary. Using the non-equilibrium Green's function approach, we calculate the generalized 4-point Hall resistance $R_{xy}$ as a function of B. In weak fields, $R_{xy}$ shows the characteristic equidistant peaks observed in the experiment and explained by classical cyclotron motion along the boundary. In strong fields, $R_{xy}$ shows a single extended plateau reflecting the quantum Hall effect. In intermediate fields, we find superimposed upon the lower Hall plateaus anomalous oscillations, which are neither periodic in 1/B (quantum Hall effect) nor in $B$ (classical cyclotron motion). The oscillations are explained by the interference between the occupied edge channels, which causes beatings in $R_{xy}$. In the case of two occupied edge channels, these beatings constitute a new commensurability between the magnetic flux enclosed within the edge channels and the flux quantum. Introducing decoherence and a partially specular boundary shows that this new effect is quite robust.

cond-mat.mes-hall

The role of the ligand layer for photoluminescence spectral diffusion of CdSe/ZnS nanoparticles

The time-resolved photoluminescence (PL) characteristics of single CdSe/ZnS nanoparticles, embedded in a PMMA layer is studied at room temperature. We observe a strong spectral jitter of up to 55 meV, which is correlated with a change in the observed linewidth. We evaluate this correlation effect using a simple model, based on the quantum confined Stark effect induced by a diffusing charge in the vicinity of the nanoparticle. This allows us to derive a mean distance between the center of the particle and the diffusing charge of approximately 3.3 nm on average, as well as a mean charge carrier displacement within the integration time. The distances are larger than the combined radius of particle core and shell of about 3 nm, but smaller than the overall radius of 5 nm including ligands. These results are reproducible, even for particles which exhibit strong blueing, with shifts of up to 150 meV. Both the statistics and its independence of core-shell alterations lead us to conclude that the charge causing the spectral jitter is situated in the ligands.

cond-mat.mes-hall