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Ayaskanta Sahu

Publications and source records attributed to Ayaskanta Sahu.

2 recordsLinked to original sources

Biphasic Meniscus Coating for Scalable and Material Efficient Quantum Dot Films

Colloidal quantum dots (cQDs) have emerged as a cornerstone of next-generation optoelectronics, offering unparalleled spectral tunability and solution-processability. However, the transition from laboratory-scale devices to sustainable industrial manufacturing is fundamentally hindered by spin-coating workflows, which are intrinsically wasteful and restricted to planar geometries. These limitations are particularly acute for high-performance cQDs containing regulated elements such as lead, cadmium, or mercury, where poor material utilization exacerbates both environmental burden and cost. Here we report a biphasic dip-coating strategy that redefines the material efficiency of nanocrystal film fabrication. By utilizing an immiscible underlayer to displace ~88% of the active reservoir volume, we demonstrate a deposition geometry that decouples material consumption from total precursor volume. Infrared PbS photodetectors fabricated via this approach maintain their performance against spin-coated benchmarks while reducing ink consumption by up to 20-fold. Our technoeconomic analysis reveals that this biphasic architecture achieves cost parity at film thicknesses an order of magnitude lower than conventional monophasic dip-coating. Our results establish a low-waste framework for solution-processed materials, providing a viable pathway for the resource-efficient manufacturing of optoelectronic devices.

cond-mat.mtrl-sci

Carrier Lifetime Enhancement in a Tellurium Nanowire/PEDOT:PSS Nanocomposite by Sulfur Passivation

We report static and time-resolved terahertz (THz) conductivity measurements of a high- performance thermoelectric material containing tellurium nanowires in a PEDOT:PSS matrix. Composites were made with and without sulfur passivation of the nanowires surfaces. The material with sulfur linkers (TeNW/PD-S) is less conductive but has a longer carrier lifetime than the formulation without (TeNW/PD). We find real conductivities at f = 1THz of σ(TeNW/PD) = 160 S/cm and σ(TeNW/PD-S) = 5.1 S/cm. These values are much larger than the corresponding DC conductivities, suggesting DC conductivity is limited by structural defects. The free-carrier lifetime in the nanowires is controlled by recombination and trapping at the nanowire surfaces. We find surface recombination velocities in bare tellurium nanowires (22m/s) and TeNW/PD-S (40m/s) that are comparable to evaporated tellurium thin films. The surface recombination velocity in TeNW/PD (509m/s) is much larger, indicating a higher interface trap density.

cond-mat.mtrl-sci