arXiv subjects

Ayaz Ali

Publications and source records attributed to Ayaz Ali.

3 recordsLinked to original sources

arXiv2023

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the $π$-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.

cond-mat.mtrl-sci↗

arXiv2021

Near ambient pressure photoelectron spectro-microscopy: from gas-solid interface to operando devices

Near Ambient Pressure Scanning Photoelectron Microscopy adds to the widely used photoemission spectroscopy and its chemically selective capability two key features: (i) the possibility to chemically analyse samples in a more realistic environmental, gas pressure condition, and (ii) the capability to investigate a system at the relevant spatial scale. To achieve these goals the approach developed at the ESCA Microscopy beamline at the Elettra Synchrotron facility combines the submicron lateral resolution of a Scanning Photoelectron Microscope with a custom designed Near Ambient Pressure Cell where a gas pressure up to 0.1 mbar is confined inside it around the sample. In this manuscript a review of experiments performed with this unique setup will be presented to illustrate its potentiality in both fundamental and applicative research such as the oxidation reactivity and gas sensitivity of metal oxides and semiconductors. In particular the capability to do operando experiment with this setup opens the possibility to perform investigations with active devices to properly address the real nature of the studied systems, because it can yield to more conclusive results when microscopy and spectroscopy are simultaneously combined in a single technique.

physics.app-ph↗

arXiv2017

Two-dimensional material based "field-effect CCD"

Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of simple pixel structure, high sensitivity, and low noise. However, the serial transfer requires fabrication incompatible with CMOS, and leads to slower, more complex, and less flexible readout than random access. Here, we report a new-concept CCD called field-effect CCD (FE-CCD), which is based on the capacitive "coupling" between the semiconductor substrate and the 2D material. The strong field effect of the 2D material enables amplification, and non-destructive readout of the integrated charges in one pixel without transfer. We demonstrated the broadband response of our CCD (up to 1870 nm) and the successful integration of 2D hetero-structures for reducing the power consumption. The demonstrated FE-CCD provides a valuable strategy for versatile 2D materials to be monolithically integrated into the semiconductor imaging technology.

physics.app-ph↗