arXiv subjects

B. A. Assaf

Publications and source records attributed to B. A. Assaf.

13 recordsLinked to original sources

arXiv2022

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases.

cond-mat.mes-hall↗

arXiv2021

Miniband engineering and topological phase transitions in topological - normal insulator superlattices

Periodic stacking of topologically trivial and non-trivial layers with opposite symmetry of the valence and conduction bands induces topological interface states that, in the strong coupling limit, hybridize both across the topological and normal insulator layers. Using band structure engineering, such superlattices can be effectively realized using the IV-VI lead tin chalcogenides. This leads to emergent minibands with a tunable topology as demonstrated both by theory and experiments. The topological minibands are proven by magneto-optical spectroscopy, revealing Landau level transitions both at the center and edges of the artificial superlattice mini Brillouin zone. Their topological character is identified by the topological phase transitions within the minibands observed as a function of temperature. The critical temperature of this transition as well as the miniband gap and miniband width can be precisely controlled by the layer thicknesses and compositions. This witnesses the generation of a new fully tunable quasi-3D topological state that provides a template for realization of magnetic Weyl semimetals and other strongly interacting topological phases.

cond-mat.mes-hall↗

arXiv2020

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3.

cond-mat.mtrl-sci↗

arXiv2020

Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells

We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and become comparable to the magnetic length. In this transport regime, the Hikami-Larkin-Nagaoka model is no longer valid. We employ the model of Wittmann and Schmid to extract the coherence time from the magnetoresistance. We find that despite our improved transport characteristics, the coherence time may be limited by scattering channels that are not strongly carrier dependent, such as electron-phonon or defect scattering.

cond-mat.mes-hall↗

arXiv2020

Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article we report on a set of experimental observations indicating the existence of massive surface states. These states are confined at the interface and dominate equilibrium and transport properties at high energy and/or high electric field. By monitoring the AC admittance of HgTe topological insulator field-effect capacitors, we access the compressibility and conductivity of surface states in a broad range of energy and electric fields. The Dirac surface states are characterized by a compressibility minimum, a linear energy dependence and a high mobility persisting up to energies much larger than the transport bandgap of the bulk. New features are revealed at high energies with signatures such as conductance peaks, compressibility bumps, a strong charge metastability and a Hall resistance anomaly. These features point to the existence of excited massive surface states, responsible for a strong intersubband scattering with the Dirac states and the nucleation of metastable bulk carriers. The spectrum of excited states agrees with predictions of a phenomenological model of the topological-trivial semiconductor interface. The model accounts for the finite interface depth and the effect of electric fields. The existence of excited topological states is essential for the understanding of topological phases and opens a route for engineering and exploiting topological resources in quantum technology.

cond-mat.mes-hall↗

arXiv2019

Determination of the crystal field splitting energy in Cd3As2 using magnetooptics

Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy. By combining angular dependent cyclotron resonance with Landau level spectroscopy measurements in the Faraday geometry, we determine that δ is positive and equal to 15+/-5 meV in Cd3As2. Our results lead to a more accurate knowledge of the details of the band structure of this Dirac semimetal such as the position its Dirac nodes in momentum space and their splitting into Weyl nodes under a magnetic field.

cond-mat.mes-hall↗

arXiv2018

Dirac parameters and topological phase diagram of Pb1-xSnxSe from magneto-spectroscopy

Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental mapping of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-closure of the energy gap is evidenced in the vicinity of this phase transition. Using magnetooptical Landau level spectroscopy, we determine the energy gap, Dirac velocity, anisotropy factor and topological character of Pb1-xSnxSe epilayers grown by molecular beam epitaxy on BaF2 (111). Our results are evidence that Pb1-xSnxSe is a model system to study topological phases and the nature of the phase transition.

cond-mat.mtrl-sci↗

arXiv2018

Tunable Dirac interface states in topological superlattices

Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the massless Dirac states that occur at material surfaces. In this work, we experimentally and theoretically introduce a platform where this hybridization can be continuously tuned: the Pb1-xSnxSe topological superlattice. In this system, topological Dirac states occur at the interfaces between a topological crystalline insulator Pb1-xSnxSe and a trivial insulator, realized in the form of topological quantum wells (TQW) epitaxially stacked on top of each other. Using magnetooptical transmission spectroscopy on high quality MBE grown Pb1-xSnxSe superlattices, we show that the penetration depth of the TQW interface states and therefore their Dirac mass is continuously tunable with temperature. This presents a new pathway to engineer the Dirac mass of topological systems and paves the way towards the realization of emergent quantum states of matter using Pb1-xSnxSe topological superlattices.

cond-mat.mes-hall↗

arXiv2018

Avoided level crossing at the magnetic field induced topological phase transition due to spin-orbital mixing

In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the topological crystalline insulator Pb1-xSnxSe, we demonstrate that such a gap closure does not occur, and an avoided crossing is observed as the magnetic field is swept through the critical field. We attribute this anticrossing to orbital parity and spin mixing of the N=0 levels. Concurrently, we observe no gap closure at the topological phase transition versus temperature suggesting that the anticrossing is a generic property of topological phase transitions.

cond-mat.mes-hall↗

arXiv2018

RF-quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors

A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capacitance and device resistance are extracted for frequencies as a high as 10 GHz, and studied as a function of the applied gate voltage. The combination of the superior quality hBN dielectric gate with the optimized transport characteristics of CVD grown Bi2Se3 (n~10^18cm-3 in 8 nm) allow us to attain a bulk depleted regime by dielectric gating. A quantum capacitance minimum is observed revealing a purely Dirac regime, where the Dirac surface state in proximity to the gate reaches charge neutrality, but the bottom surface Dirac cone remains charged, and couples capacitively to the top surface via the insulating bulk. Our work paves the way towards implementation of topological materials in RF devices.

cond-mat.mes-hall↗

arXiv2017

Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials

Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level disperses upwards. This anomalous behavior is shown to be responsible for the observed NLMR. Our work provides an explanation of the outstanding question of NLMR in topological insulators and establishes this effect as a possible hallmark of bulk conduction in topological matter.

cond-mat.mes-hall↗

arXiv2016

Massive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption

Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B^1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.

cond-mat.mes-hall↗

arXiv2015

Antiferromagnetic phase of the gapless semiconductor V3Al

Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely-oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-third of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing antiferromagnetic elements.

cond-mat.mtrl-sci↗