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B. Alloing

Publications and source records attributed to B. Alloing.

9 recordsLinked to original sources

Mode-locking instability and multiple soliton formation in GaN polariton waveguide cavities

We study the emergence of multi-soliton regimes in 1D ridge polariton waveguides of two different lengths. We show that by varying the position of the gain, which in out-of-equilibrium polariton systems is provided by the pumping laser and its associated excitonic reservoir, it is possible to tune the regime of soliton formation between single and multiple solitons. This soliton dynamics can be quantitatively reproduced by solving the Gross-Pitaevskii equations of the coupled exciton-photon system, which show that the soliton splitting mechanism is governed by the exciton reservoir dynamics.

cond-mat.mes-hall

Soliton formation in a bound state in the continuum GaN waveguide polariton laser

We study polaritonic bound states in the continuum (BIC) created in GaN waveguides. The existence of symmetry-protected BICs is confirmed by the suppression of light emission and the observation of a polarization vortex in momentum space. Upon increasing the pumping, polariton population accumulates at the BIC and we observe polariton lasing from the blueshifted BIC states. The assessment of the polariton BIC emission energy and of its real and momentum space wavefunctions as a function of pumping power, i.e. of polariton density, indicates the formation of a bright soliton above the lasing threshold. Soliton formation at the BIC is induced by the combination of negative mass BIC and of repulsive polariton-polariton and polariton-reservoir interactions.

cond-mat.mes-hall

Mode-locked GaN waveguide polariton laser

So far, exciton-polariton (polariton) lasers were mostly single mode lasers based on microcavities. Despite the large repulsive polariton-polariton interaction, pulsed mode-locked polariton laser was never reported. Here, we use a $60 \ \mu m-$long GaN-based waveguide surrounded by distributed Bragg reflectors forming a multi-mode horizontal cavity. We demonstrate experimentally and theoretically a polariton mode-locked micro-laser operating in the blue-UV, at room temperature, with a 300$\ GHz$ repetition rate and 100$\ fs$-long pulses. The mode locking is demonstrated by the compensation (linearization) of the mode dispersion by the self-phase modulation induced by the polariton-polariton interaction. It is also supported by the observation in experiment and theory of the typical envelope frequency profile of a bright soliton.

physics.optics

Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility.

cond-mat.mes-hall

From Strong to Weak Coupling Regime in a Single GaN Microwire up to Room Temperature

Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanostructure. The demonstration relies on a method which doesn't require any knowledge \'a priori on the photonic eigenmodes energy in the microwire, i.e. the details of the microwire cross-section shape. Moreover, using a heavily doped segment within the same microwire, we confirm experimentally that free excitons provide the oscillator strength for this strong coupling regime. The measured Rabi splitting to linewidth ratio of 15 matches state of the art planar Nitride-based microcavities, in spite of a much simpler design and a less demanding fabrication process. These results show that GaN microwires constitute a simpler and promising system to achieve electrically pumped lasing in the strong coupling regime.

cond-mat.mtrl-sci

Controlling the charge environment of single quantum dots in a photonic-crystal cavity

We demonstrate that the presence of charge around a semiconductor quantum dot (QD) strongly affects its optical properties and produces non-resonant coupling to the modes of a microcavity. We first show that, besides (multi)exciton lines, a QD generates a spectrally broad emission which efficiently couples to cavity modes. Its temporal dynamics shows that it is related to the Coulomb interaction between the QD (multi)excitons and carriers in the adjacent wetting layer. This mechanism can be suppressed by the application of an electric field, making the QD closer to an ideal two-level system.

cond-mat.mes-hall

Enhanced spontaneous emission in a photonic crystal light-emitting diode

We report direct evidence of enhanced spontaneous emission in a photonic crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injected laterally from the periphery to the center of the PhC. A well-isolated emission peak at 1300nm from the PhC cavity mode is observed, and the enhancement of the spontaneous emission rate is clearly evidenced by time-resolved electroluminescence measurements, showing that our diode switches off in a time shorter than the bulk radiative and nonradiative lifetimes

cond-mat.other

Single photonics at telecom wavelengths using nanowire superconducting detectors

Single photonic applications - such as quantum key distribution - rely on the transmission of single photons, and require the ultimate sensitivity that an optical detector can achieve. Single-photon detectors must convert the energy of an optical pulse containing a single photon into a measurable electrical signal. We report on fiber-coupled superconducting single-photon detectors (SSPDs) with specifications that exceed those of avalanche photodiodes (APDs), operating at telecommunication wavelength, in sensitivity, temporal resolution and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(t) of single-photon states at 1300nm produced by single semiconductor quantum dots (QDs).

physics.ins-det

Time resolved measurements on low-density single quantum dots at 1300nm

We present time integrated and time resolved measurements on single In/As quantum dots (QD) emitting at 1300nm, at 10K, embedded in a planar microcavity. We clearly identify a standard spectroscopic signature from single QDs and compare the exciton line width and biexciton (BX) binding energy for several QDs. We present this data for QDs spatially selected by etched mesas and metallic apertures. Time resolved photoluminescence (PL) from single electron-hole recombination in the ground state of the QD is investigated as a function of excitation power and temperature. The measurements reveal the presence of a background emission that delays the PL of excitons in the ground state.

cond-mat.other