arXiv subjects

B. D. Moreno

Publications and source records attributed to B. D. Moreno.

4 recordsLinked to original sources

arXiv2026

Controlling and Measuring the Degree of Coherence at CLS using X-ray Interferometry

This paper investigates a case study on measuring and controlling the first-order degree of spatial coherence under different coupling adjustments in the storage ring. The experimental findings are consistent with the predicted inverse relationship between the visibility and the coupling factor. The degree of coherence was measured using X-ray double slit interferometry with synchrotron radiation at an energy of 7 keV on the Brockhouse X-Ray Diffraction and Scattering in-vacuum undulator beamline. The vertical degree of coherence increases as the coupling factor in the storage ring is reduced. The Linear Optics for Closed Orbit (LOCO) algorithm is used to model the linear terms of the storage ring optics in Accelerator Toolbox. The LOCO-tuned model provides insights into the variations in the vertical beam size at two different source points in the storage ring as a function of the coupling factor. The coupling factor is parameterized by the closest-tune approach with a bunch-by-bunch feedback system to confirm the trend in the changes of the vertical beam size and the visibility.

physics.acc-ph↗

arXiv2026

Hybrid Epitaxial Al/InGaAs system: Solid-state dewetting and Al facet formation

Hybrid superconductor--semiconductor platforms can host subgap electronic excitations such as Andreev bound states (ABSs); in topological regimes, a special zero-energy class, Majorana bound states (MBSs), can emerge. Here we report the growth of epitaxial Al films by molecular-beam epitaxy on $\mathrm{In_{0.75}Ga_{0.25}As}$ under near-room-temperature substrate conditions. Using a combination of AFM/SEM, cross-sectional TEM, and \emph{in situ} RHEED, we map how substrate temperature and Al deposition rate govern film morphology, continuity, and interface quality. We identify a growth window that yields continuous, superconducting Al films with an abrupt $\mathrm{Al}/\mathrm{In_{0.75}Ga_{0.25}As}$ interface and no detectable indium interdiffusion. We further investigate the thermal stability of these films under \emph{in situ} post-growth heating and \emph{ex situ} annealing following surface oxidation. For unoxidized Al, rapid surface diffusion triggers solid-state dewetting at approximately $165\,^\circ\mathrm{C}$, resulting in the formation of $\{111\}$-faceted Al islands. In contrast, the presence of a native oxide largely suppresses dewetting, with failure occurring only locally at surface defects. Annealing above the indium melting point ($156.6\,^\circ\mathrm{C}$) induces significant In surface migration in both cases, leading either to localized interfacial In inclusions beneath Al agglomerates or to uniform surface contamination at sites of localized layer breakdown. Together, these results define growth and annealing conditions for thermally robust epitaxial Al on III--V semiconductors and provide practical guidance for fabricating high-quality superconductor--semiconductor hybrid platforms for quantum devices.

cond-mat.mtrl-sci↗

arXiv2024

Spin-state ordering and intermediate states in the mixed-valence cobalt oxyborate Co$_3$O$_2$BO$_3$ with spin crossover

Spin-state ordering - a periodic pattern of ions with different spin-state configurations along a crystal lattice - is a rare phenomenon, and its possible interrelation with other electronic degrees of freedom remains little explored. Here we perform a structural investigation of the mixed-valence Co homometallic ludwigite Co$_2^{2+}$Co$^{3+}$O$_2$BO$_3$. A superstructure consistent with a long-range Co$^{3+}$ spin-state ordering is observed between $T_{4}=580$ K and $T_{3}=510$ K. Intermediate states with mesoscopic correlations are detected below $T_{3}$ down to $T_{1}=480$ K with a change of dimensionality at $T_{2}=495$ K. The spin-state correlations are connected to the charge sector as revealed by the abrupt changes in the electrical resistance at $T_1$ and $T_2$. The evolution of the structural parameters below $T_{1}$ indicate that the spin crossover is ignited by a moderate degree of thermally-induced Co$^{2+}$/Co$^{3+}$ charge disorder. Charge and spin-state degrees of freedom can be interrelated in mixed-valence spin-crossover materials, leading to sharp transitions involving intermediate spin-state/charge correlated states at the mesoscale.

cond-mat.str-el↗

arXiv2024

Novel 3D Reciprocal Space Visualization of Strain Relaxation in InSb on GaAs Substrates

This study introduces the Reciprocal Space Polar Visualization (RSPV) method, a novel approach for visualizing X-ray diffraction-based reciprocal space data. RSPV allows for the precise separation of tilt and strain, facilitating their individual analysis. InSb was grown by molecular beam epitaxy (MBE) on two (001) GaAs substrates $\unicode{x2014}$ one with no misorientation (Sample A) $\unicode{x2014}$ one with 2° surface misorientation from the (001) planes (Sample B). There is a substantial lattice mismatch with the substrate and this results in the generation of defects within the InSb layer during growth. To demonstrate RSPV's effectiveness, a comprehensive comparison of surface morphology, dislocation density, strain, and tilt was conducted. RSPV revealed previously unobserved features of the (004) InSb Bragg peak, partially explained by the presence of threading dislocations and oriented abrupt steps (OASs). Surface morphologies examined by an atomic force microscope (AFM) revealed that Sample B had significantly lower root mean square (RMS) roughness. Independent estimates of threading dislocation density (TDD) using X-ray diffraction (XRD) and electron channelling contrast imaging (ECCI) confirmed that Sample B exhibited a significantly lower TDD than Sample A. XRD methods further revealed unequal amounts of $α$ and $β$ type threading dislocations in both samples, contributing to an anisotropic Bragg peak. RSPV is shown to be a robust method for exploring 3D reciprocal space in any crystal, demonstrating that growing InSb on misoriented GaAs produced a higher-quality crystal compared to an on-orientation substrate.

cond-mat.mtrl-sci↗