B. Kurowska | Searcharxiv

arXiv2021

Antiferromagnetic Hysteresis above the Spin Flop Field

Magnetocrystalline anisotropy is essential in the physics of antiferromagnets and commonly treated as a constant, not depending on an external magnetic field. However, we demonstrate that in CoO the anisotropy should necessarily depend on the magnetic field, which is shown by the spin Hall magnetoresistance of the CoO $|$ Pt device. Below the N\'eel temperature CoO reveals a spin-flop transition at 240 K at 7.0 T, above which a hysteresis in the angular dependence of magnetoresistance unexpectedly persists up to 30 T. This behavior is shown to agree with the presence of the unquenched orbital momentum, which can play an important role in antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2018

Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Walls epitaxy mode induced when the catalyzing Au nanoparticle mixes with Sn delivered from SnTe flux, providing liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out on necessity of depositing protective capping in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.

cond-mat.mtrl-sci↗